Abstract: Certain embodiments provide an exhaust gas treatment device, comprising a scrubber unit having a vessel and a sprayer spraying water into the vessel, a first pipe through which a first gas discharged from an external apparatus and containing a non-water-soluble organic solvent is supplied to the vessel, and a second pipe through which a second gas containing a water-soluble organic solvent is supplied to the vessel through the first pipe or directly. In the vessel, the water-soluble organic solvent and the non-water-soluble organic solvent are adsorbed and removed from a mixed gas composed of the first gas and the second gas by the water sprayed from the sprayer. The mixed gas is discharged from the vessel through a third pipe.

Abstract: In one embodiment, after rinsing a semiconductor substrate having a fine pattern formed thereon with pure water, the pure water staying on the semiconductor substrate is substituted with a water soluble organic solvent, and then, the semiconductor substrate is introduced into a chamber in a state wet with the water soluble organic solvent. Then, the water soluble organic solvent is turned into a supercritical state by increasing a temperature inside of the chamber. Thereafter, the inside of the chamber is reduced in pressure while keeping the inside of the chamber at a temperature enough not to liquefy the pure water (i.e., rinsing pure water mixed into the water soluble organic solvent), and further, the water soluble organic solvent in the supercritical state is changed into a gaseous state, to be discharged from the chamber, so that the semiconductor substrate is dried.

Abstract: A manufacturing apparatus for a semiconductor device, treating a SiN film formed on a wafer with phosphoric acid solution, including a processing bath to store phosphoric acid solution provided for treatment of the wafer, a control unit for calculating integrated SiN etching amount of the phosphoric acid solution, determining necessity of quality adjustment of the phosphoric acid solution, based on correlation between the integrated SiN etching amount calculated and etching selectivity to oxide film, and calculating a quality adjustment amount of the phosphoric acid solution as needed, and also including a mechanism to adjust the quality of the phosphoric acid solution based on the quality adjustment amount calculated.

Abstract: According to an embodiment, a supercritical drying method includes: introducing a semiconductor substrate of which a surface is wet with a supercritical displacement solvent into a chamber; supplying a first supercritical fluid being based on first carbon dioxide to the chamber; supplying a second supercritical fluid which is based on second carbon dioxide to the chamber, after the supplying of the first supercritical fluid; and lowering an inside pressure of the chamber to gasify the second supercritical fluid and to discharge the gasified second supercritical fluid from the chamber. The first carbon dioxide is generated by recovering and recycling the carbon dioxide discharged from the chamber. The second carbon dioxide contains no supercritical displacement solvent or contains the supercritical displacement solvent in a concentration lower than that in the first carbon dioxide.

Abstract: A metal member layer on a silicon member layer is patterned. A sidewall film is formed on a surface of the metal member layer. The silicon member layer is patterned to form a structure including the silicon member layer and the metal member layer, the surface of which is covered with the sidewall film. After the surface of the structure is cleaned, a water-repellent protective film is formed on the surface of the structure before the surface of the structure is dried.

Abstract: A plasma processing method in which performing a plasma etching on metal layers formed on a substrate is conducted to form a pattern having the metal layers in a stacked structure, and then a deposit containing a metal that forms the metal layers and being deposited on a sidewall portion of the pattern is removed, the method includes: forming a protective layer by forming an oxide or chloride of the metal on sidewall portions of the metal layers; removing the deposit by applying a plasma of a gas containing fluorine atoms; and reducing the oxide or chloride of the metal by applying a plasma containing hydrogen after forming the protective layer and removing the deposit.

Abstract: According to one embodiment, a semiconductor substrate whose surface is wet with a chemical solution (solvent) and formed with patterns having an aspect ratio of 10 or more is loaded into a chamber. Then, while the chemical solution (solvent) remains on the semiconductor substrate, its temperature is increased to a predetermined temperature in the range of 160° C. or more and less than the critical temperature of the chemical solution (solvent), and the evaporated chemical solution (solvent) is discharged from the chamber.

Abstract: According to one embodiment, a semiconductor substrate having a surface wetted with a chemical solution is introduced into a chamber, and a supercritical fluid is supplied into the chamber. The temperature in the chamber is adjusted to the critical temperature of the chemical solution or higher, so that the chemical solution is put into a supercritical state. The pressure in the chamber is then lowered, and the chemical solution in the critical state is turned into gaseous matter. The gaseous matter is then discharged from the chamber.

Abstract: In one embodiment, a method for treating a surface of a semiconductor substrate is disclosed. The semiconductor substrate has a first pattern covered by a resist and a second pattern not covered by the resist. The method includes supplying a resist-insoluble first chemical solution onto a semiconductor substrate to subject the second pattern to a chemical solution process. The method includes supplying a mixed liquid of a water repellency agent and a resist-soluble second chemical solution onto the semiconductor substrate after the supply of the first chemical solution, to form a water-repellent protective film on a surface of at least the second pattern and to release the resist. In addition, the method can rinse the semiconductor substrate using water after the formation of the water-repellent protective film, and dry the rinsed semiconductor substrate.

Abstract: In one embodiment, a semiconductor substrate cleaning method is disclosed. The method can clean a semiconductor substrate by using a chemical of 80° C. or above. The method can rinse the semiconductor substrate by using pure water of 40° C. or above after the cleaning of the semiconductor substrate. The method can then rinse the semiconductor substrate by using pure water of 30° C. or below. In addition, the method can dry the semiconductor substrate.

Abstract: According to one embodiment, a substrate having a plurality of adjacent patterns on one surface thereof is cleaned by cleaning liquid. Subsequently, after the cleaning liquid is displaced with pure water, the pure water is displaced with displacement liquid. Under a condition that the displacement liquid among the patterns does not vaporize, the displacement liquid not contributing to prevention of collapse of the patterns is removed. After the displacement liquid is removed, the substrate is held in supercritical fluid and the displacement liquid among the patterns is displaced with the supercritical fluid. After the displacement liquid among the patterns is displaced with the supercritical fluid, the supercritical fluid adhering to the substrate is vaporized.

Abstract: A method of treating a semiconductor substrate has forming convex patterns over the semiconductor substrate by dry etching, cleaning and modifying a surface of the convex patterns by using chemical, forming a hydrophobic functional surface on the modified surface of the convex patterns, after forming the hydrophobic functional surface, rinsing the semiconductor substrate by using water, drying the semiconductor substrate, and removing the hydrophobic functional group from the hydrophobic functional surface of the convex patterns.

Abstract: In one embodiment, a surface treatment apparatus for a semiconductor substrate includes a holding unit, a first supply unit, a second supply unit, a third supply unit, a drying treatment unit, and a removal unit. The holding unit holds a semiconductor substrate with a surface having a convex pattern formed thereon. The first supply unit supplies a chemical solution to the surface of the semiconductor substrate, to perform cleaning and oxidation. The second supply unit supplies pure water to the surface of the semiconductor substrate, to rinse the semiconductor substrate. The third supply unit supplies a water repelling agent to the surface of the semiconductor substrate, to form a water repellent protective film on the surface of the convex pattern. The drying treatment unit dries the semiconductor substrate. The removal unit removes the water repellent protective film while making the convex pattern remain.

Abstract: In one embodiment, an apparatus of treating a surface of a semiconductor substrate comprises a substrate holding and rotating unit, first to fourth supplying units, and a removing unit. A substrate holding and rotating unit holds a semiconductor substrate, having a convex pattern formed on its surface, and rotates the semiconductor substrate. A first supplying unit supplies a chemical onto the surface of the semiconductor substrate in order to clean the semiconductor substrate. A second supplying unit supplies pure water to the surface of the semiconductor substrate in order to rinse the semiconductor substrate. A third supplying unit supplies a water repellent agent to the surface of the semiconductor substrate in order to form a water repellent protective film onto the surface of the convex pattern. A fourth supplying unit supplies alcohol, which is diluted with pure water, or acid water to the surface of the semiconductor substrate in order to rinse the semiconductor substrate.

Abstract: In one embodiment, an apparatus of treating a surface of a semiconductor substrate comprises a substrate holding and rotating unit which holds a semiconductor substrate with a surface having a convex pattern formed thereon and rotates the semiconductor substrate, a first supply unit which supplies a chemical and/or pure water to the surface of the semiconductor substrate, and a second supply unit which supplies a diluted water repellent to the surface of the semiconductor substrate to form a water-repellent protective film on the surface of the convex pattern. The second supply unit comprises a buffer tank which stores the water repellent, a first supply line which supplies a purge gas to the buffer tank, a second supply line which supplies a diluent, a pump which sends off the water repellent within the buffer tank, a third supply line which supplies the water repellent sent off from the pump, and a mixing valve which mixes the diluent and the water repellent to produce the diluted water repellent.

Abstract: A method of treating the surface of a semiconductor substrate has cleaning the semiconductor substrate having a pattern formed thereon by using a chemical solution, removing the chemical solution by using pure water, forming a water repellent protective film on the surface of the semiconductor substrate, rinsing the semiconductor substrate by using pure water, and drying the semiconductor substrate.

Abstract: A metal member layer on a silicon member layer is patterned. A sidewall film is formed on a surface of the metal member layer. The silicon member layer is patterned to form a structure including the silicon member layer and the metal member layer, the surface of which is covered with the sidewall film. After the surface of the structure is cleaned, a water-repellent protective film is formed on the surface of the structure before the surface of the structure is dried.

Abstract: A method of treating a semiconductor substrate has forming convex patterns over the semiconductor substrate by dry etching, cleaning and modifying a surface of the convex patterns by using chemical, forming a hydrophobic functional surface on the modified surface of the convex patterns, after forming the hydrophobic functional surface, rinsing the semiconductor substrate by using water, drying the semiconductor substrate, and removing the hydrophobic functional group from the hydrophobic functional surface of the convex patterns.

Abstract: An etching apparatus includes a chamber containing an etching solution including first and second components and water, a concentration of the water in the etching solution is at a specified level or lower; a circulation path circulating the etching solution; a concentration controller sampling the etching liquid from the circulation path and controls concentrations of the etching solution respectively; and a refilling chemical liquid feeder feeding a refilling chemical liquid including the first component having a concentration higher than the first component in the etching solution.

Abstract: An etching apparatus includes a chamber containing an etching solution including first and second components and water, a concentration of the water in the etching solution is at a specified level or lower; a circulation path circulating the etching solution; a concentration controller sampling the etching liquid from the circulation path and controls concentrations of the etching solution respectively; and a refilling chemical liquid feeder feeding a refilling chemical liquid including the first component having a concentration higher than the first component in the etching solution.