Patents by Inventor Hisashi Shima
Hisashi Shima has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20240127982Abstract: An information processing apparatus includes a converting portion having a plurality of electrical conductors to be arranged in mutual separation and a medium arranged so as to mutually connect the plurality of electrical conductors, wherein the converting portion is the information processing apparatus to convert an input signal to an output signal. The medium includes the electrolyte and is configured to be capable of controlling an electrical conductivity of an electrically conductive path mutually electrically connecting the plurality of electrical conductors, and the medium is selected such that the electrical conductivity of the electrically conductive path changes over time with the input signal not being present.Type: ApplicationFiled: January 27, 2022Publication date: April 18, 2024Applicants: NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY, TOKYO UNIVERSITY OF SCIENCE FOUNDATION, TOYOTA PHYSICAL AND CHEMICAL RESEARCH INSTITUTE, NATIONAL UNIVERSITY CORPORATION TOTTORI UNIVERSITY, NAGASE & CO., LTD.Inventors: Hiroyuki AKINAGA, Hisashi SHIMA, Yasuhisa NAITOH, Hiroshi SATOU, Dan SATOU, Takuma MATSUO, Kentaro KINOSHITA, Toshiyuki ITOH, Toshiki NOKAMI, Masakazu KOBAYASHI
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Patent number: 11933752Abstract: A gas sensor includes: a gas-sensitive body layer disposed above a substrate and including a metal oxide layer; a first electrode on the gas-sensitive body layer; and a second electrode on the gas-sensitive body layer, being apart from the first electrode by a gap. The gas-sensitive body layer has a resistance change characteristic that reversibly transitions to a high-resistance state and a low-resistance state on basis of a voltage applied across the first electrode and the second electrode. At least a part of the gas-sensitive body layer is exposed to the gap. The gas-sensitive body layer has a resistance that decreases when gas containing a hydrogen atom is in contact with the second electrode.Type: GrantFiled: July 23, 2019Date of Patent: March 19, 2024Assignee: NUVOTON TECHNOLOGY CORPORATION JAPANInventors: Satoru Fujii, Zhiqiang Wei, Kazunari Homma, Shinichi Yoneda, Yasuhisa Naito, Hisashi Shima, Hiroyuki Akinaga
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Patent number: 11889776Abstract: A variable resistance non-volatile memory element includes first and second electrodes and a variable resistance layer between the electrodes. The layer has a resistance value reversibly variable based on an electrical signal. The layer includes a first variable resistance layer that includes an oxygen deficient first metal oxide containing a first metal element and oxygen, and a second variable resistance layer that includes a composite oxide containing the first metal element, a second metal element different from the first metal element, and oxygen, and having a different degree of oxygen deficiency from the first metal oxide. The composite oxide has a lower degree of oxygen deficiency than the first metal oxide. At room temperature, the composite oxide has a smaller oxygen diffusion coefficient than a second metal oxide containing the first metal element and oxygen, and having the degree of oxygen deficiency equal to that of the composite oxide.Type: GrantFiled: June 23, 2021Date of Patent: January 30, 2024Assignee: Nuvoton Technology Corporation JapanInventors: Ryutaro Yasuhara, Satoru Fujii, Takumi Mikawa, Atsushi Himeno, Kengo Nishio, Takehide Miyazaki, Hiroyuki Akinaga, Yasuhisa Naitoh, Hisashi Shima
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Publication number: 20220407003Abstract: An information processing device, including a resistive analog neuromorphic device element having a pair of electrodes and an oxide layer provided between the pair of electrodes, and a parallel circuit having a low resistance component and a capacitance component. The parallel circuit and the resistive analog neuromorphic device element are connected in series.Type: ApplicationFiled: August 26, 2022Publication date: December 22, 2022Applicant: NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGYInventors: Hisashi SHIMA, Yasuhisa NAITOH, Hiroyuki AKINAGA, Makoto TAKAHASHI
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Patent number: 11457303Abstract: A device can include a processor; memory accessible to the processor; a housing assembly that includes a display and a tray recess; and an ear bud tray disposed in the tray recess.Type: GrantFiled: November 20, 2020Date of Patent: September 27, 2022Assignee: Lenovo (Singapore) Pte. Ltd.Inventors: Samuel Jackson Patterson, Cuong Huy Truong, Kazuo Nakada, Hisashi Shima
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Publication number: 20220254998Abstract: A conductive bridge memory device includes a memory cell including a first metal layer; a second metal layer; a first insulator layer having a first surface facing the first metal layer and a second surface facing the second metal layer and being a surface opposite to the first surface, and having a through hole penetrating between the first surface and the second surface; and a liquid layer being formed of liquid containing a liquid electrolyte impregnated in the through hole.Type: ApplicationFiled: August 28, 2020Publication date: August 11, 2022Applicants: NATIONAL UNIVERSITY CORPORATION TOTTORI UNIVERSITY, NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY, NAGASE & CO., LTD.Inventors: Toshiyuki ITOH, Toshiki NOKAMI, Kentaro KINOSHITA, Hisashi SHIMA, Yasuhisa NAITOH, Hiroyuki AKINAGA, Hiroshi SATOU, Shigeki MORII, Kusuo OTA, Atsushi TANAKA
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Publication number: 20220167074Abstract: A device can include a processor; memory accessible to the processor; a housing assembly that includes a display and a tray recess; and an ear bud tray disposed in the tray recess.Type: ApplicationFiled: November 20, 2020Publication date: May 26, 2022Inventors: Samuel Jackson Patterson, Cuong Huy Truong, Kazuo Nakada, Hisashi Shima
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Publication number: 20210320248Abstract: A variable resistance non-volatile memory element includes first and second electrodes and a variable resistance layer between the electrodes. The layer has a resistance value reversibly variable based on an electrical signal. The layer includes a first variable resistance layer that includes an oxygen deficient first metal oxide containing a first metal element and oxygen, and a second variable resistance layer that includes a composite oxide containing the first metal element, a second metal element different from the first metal element, and oxygen, and having a different degree of oxygen deficiency from the first metal oxide. The composite oxide has a lower degree of oxygen deficiency than the first metal oxide. At room temperature, the composite oxide has a smaller oxygen diffusion coefficient than a second metal oxide containing the first metal element and oxygen, and having the degree of oxygen deficiency equal to that of the composite oxide.Type: ApplicationFiled: June 23, 2021Publication date: October 14, 2021Inventors: Ryutaro YASUHARA, Satoru FUJII, Takumi MIKAWA, Atsushi HIMENO, Kengo NISHIO, Takehide MIYAZAKI, Hiroyuki AKINAGA, Yasuhisa NAITOH, Hisashi SHIMA
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Publication number: 20190346391Abstract: A gas sensor includes: a gas-sensitive body layer disposed above a substrate and including a metal oxide layer; a first electrode on the gas-sensitive body layer; and a second electrode on the gas-sensitive body layer, being apart from the first electrode by a gap. The gas-sensitive body layer has a resistance change characteristic that reversibly transitions to a high-resistance state and a low-resistance state on basis of a voltage applied across the first electrode and the second electrode. At least a part of the gas-sensitive body layer is exposed to the gap. The gas-sensitive body layer has a resistance that decreases when gas containing a hydrogen atom is in contact with the second electrode.Type: ApplicationFiled: July 23, 2019Publication date: November 14, 2019Inventors: Satoru Fujii, Zhiqiang Wei, Kazunari Homma, Shinichi Yoneda, Yasuhisa Naito, Hisashi Shima, Hiroyuki Akinaga
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Patent number: 9025327Abstract: Some embodiments of the present invention include a portable tablet folio stand that is designed for use in multiple modes. The stand can allow a user to view the tablet from multiple angles, such as a movie viewing angle and a working angle. In the movie viewing angle, the tablet is optimally positioned for viewing the tablet screen, for instance to watch videos. In the working angle, the tablet is optimally positioned for performing tasks such as typing on the tablet. In some embodiments, the tablet stand can be configured to be portable and detachably coupled to a keyboard.Type: GrantFiled: June 29, 2012Date of Patent: May 5, 2015Assignee: Lenovo (Singapore) Pte. Ltd.Inventors: Hiroyuki Noguchi, Eiji Shinohara, Hideaki Hasegawa, Hisashi Shima, Tomoyuki Takahashi, Aaron Michael Stewart
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Publication number: 20140002977Abstract: Some embodiments of the present invention include a portable tablet folio stand that is designed for use in multiple modes. The stand can allow a user to view the tablet from multiple angles, such as a movie viewing angle and a working angle. In the movie viewing angle, the tablet is optimally positioned for viewing the tablet screen, for instance to watch videos. In the working angle, the tablet is optimally positioned for performing tasks such as typing on the tablet. In some embodiments, the tablet stand can be configured to be portable and detachably coupled to a keyboard.Type: ApplicationFiled: June 29, 2012Publication date: January 2, 2014Inventors: Hiroyuki Noguchi, Eiji Shinohara, Hideaki Hasegawa, Hisashi Shima, Tomoyuki Takahashi, Aaron Michael Stewart
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Patent number: 8487415Abstract: The present invention provides a rectifier element that has a titanium oxide layer interposed between first and second electrodes containing a transition metal with an electronegativity larger than that of Ti, wherein, in the titanium oxide layer, only the interface on the side facing any one of the electrodes has a stoichiometric composition, and wherein the average composition of the whole layer is represented by the formula TiOx (wherein x satisfies the relationship 1.6?x<2), and wherein the rectifying characteristics can be reversed by applying a reverse electrical signal that exceeds the critical reverse electric power between the first and second electrodes in an opposite direction. The present invention also provides a process for producing a rectifier element, which includes the steps of depositing a first electrode that contains a transition metal with an electronegativity larger than that of Ti on a substrate; depositing a layer of titanium oxide (TiOx, wherein x satisfies the relationship 1.Type: GrantFiled: October 30, 2008Date of Patent: July 16, 2013Assignee: National Institute of Advanced Industrial Science and TechnologyInventors: Hisashi Shima, Hiroyuki Akinaga, Shoji Ishibashi, Tomoyuki Tamura
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Patent number: 8054674Abstract: Provided is a variable resistive element which performs high speed and low power consumption operation. The variable resistive element comprises a metal oxide layer between first and second electrodes wherein electrical resistance between the first and second electrodes reversibly changes in accordance with application of electrical stress across the first and second electrodes. The metal oxide layer has a filament, which is a current path where the density of a current flowing between the first and second electrodes locally increases. A portion including at least the vicinity of an interface between the certain electrode, which is one or both of the first and second electrodes, and the filament, on an interface between the certain electrode and the metal oxide layer is provided with an interface oxide which is an oxide of at least one element included in the certain electrode and different from the oxide of the metal oxide layer.Type: GrantFiled: April 7, 2008Date of Patent: November 8, 2011Assignees: Sharp Kabushiki Kaisha, National Institute of Advanced Industrial Science and TechnologyInventors: Yukio Tamai, Yasunari Hosoi, Nobuyoshi Awaya, Shigeo Ohnishi, Kazuya Ishihara, Hisashi Shima, Hiroyuki Akinaga, Fumiyoshi Takano
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Publication number: 20110109556Abstract: Embodiments of the invention provide an electronic device, such as a laptop PC, with a keyboard having specialized keys. The specialized keys according to embodiments of the invention are chamfer-less, configured with a larger, āDā shaped striking surface having a concavity therein.Type: ApplicationFiled: January 22, 2010Publication date: May 12, 2011Applicant: Lenovo (Singapore) Pte. Ltd.Inventors: Harriss C.N. Ganey, David W. Hill, Go Osaki, Hisashi Shima, Aaron M. Stewart, John D. Swansey, Tomoyuki Takahashi
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Publication number: 20110110697Abstract: Embodiments of the invention provide an electronic device, such as a laptop PC, with a keyboard having specialized keys. The specialized keys according to embodiments of the invention are chamfer-less, configured with a larger, āDā shaped striking surface having a concavity therein.Type: ApplicationFiled: November 11, 2009Publication date: May 12, 2011Applicant: Lenovo (Singapore) Pte. Ltd.,Inventors: Harriss C.N. Ganey, David W. Hill, Go Osaki, Hisashi Shima, Aaron M. Stewart, John D. Swansey, Tomoyuki Takahashi
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Patent number: 7923711Abstract: The present invention provides switching elements having a readout margin suitable for data storage units of nonvolatile memories, which are obtained by improving the resistance ratio of metal oxide thin films having reversible variable resistance properties. The present invention provides switching elements having a metal oxide consisting of a transition metal and oxygen formed between a first electrode and a second electrode, by modifying one or more of the crystal structure, ionic valence number of metal element, and nonstoichiometricity of a stoichiometric compound consisted of the transition metal and oxygen. The present invention also provides methods for producing switching elements having reversible variable resistance characteristics due to electric power application history.Type: GrantFiled: July 26, 2007Date of Patent: April 12, 2011Assignees: National Institute of Advanced Industrial Science and Technology, Sharp CorporationInventors: Hisashi Shima, Hiroyuki Akinaga, Fumiyoshi Takano, Yukio Tamai
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Patent number: 7894239Abstract: The variable resistance element of the present invention is a variable resistance element having an electrode, the other electrode, and a metal oxide material sandwiched between the electrodes and having an electrical resistance, between the electrodes, changing reversibly in response to a voltage applied between the electrodes. The variable resistance element further includes, inside the metal oxide material, a low resistance material having a lower electrical resistance than the metal oxide material and being out of contact with at least either one of the electrodes. This makes it possible to reduce a forming voltage for providing a conductive section inside the metal oxide material, without causing a leakage current to increase.Type: GrantFiled: December 4, 2008Date of Patent: February 22, 2011Assignees: Sharp Kabushiki Kaisha, National Institute of Advanced Industrial Science and TechnologyInventors: Yukio Tamai, Yasunari Hosoi, Nobuyoshi Awaya, Shigeo Ohnishi, Kazuya Ishihara, Hisashi Shima, Fumiyoshi Takano, Hiroyuki Akinaga
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Publication number: 20100276684Abstract: The present invention provides a rectifier element that has a titanium oxide layer interposed between first and second electrodes containing a transition metal with an electronegativity larger than that of Ti, wherein, in the titanium oxide layer, only the interface on the side facing any one of the electrodes has a stoichiometric composition, and wherein the average composition of the whole layer is represented by the formula TiOx (wherein x satisfies the relationship 1.6?x<2), and wherein the rectifying characteristics can be reversed by applying a reverse electrical signal that exceeds the critical reverse electric power between the first and second electrodes in an opposite direction. The present invention also provides a process for producing a rectifier element, which includes the steps of depositing a first electrode that contains a transition metal with an electronegativity larger than that of Ti on a substrate; depositing a layer of titanium oxide (TiOx, wherein x satisfies the relationship 1.Type: ApplicationFiled: October 30, 2008Publication date: November 4, 2010Inventors: Hisashi Shima, Hiroyuki Akinaga, Shoji Ishibashi, Tomoyuki Tamura
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Publication number: 20100172170Abstract: Provided is a variable resistive element which performs high speed and low power consumption operation. The variable resistive element comprises a metal oxide layer between first and second electrodes wherein electrical resistance between the first and second electrodes reversibly changes in accordance with application of electrical stress across the first and second electrodes. The metal oxide layer has a filament, which is a current path where the density of a current flowing between the first and second electrodes locally increases. A portion including at least the vicinity of an interface between the certain electrode, which is one or both of the first and second electrodes, and the filament, on an interface between the certain electrode and the metal oxide layer is provided with an interface oxide which is an oxide of at least one element included in the certain electrode and different from the oxide of the metal oxide layer.Type: ApplicationFiled: April 7, 2008Publication date: July 8, 2010Inventors: Yukio Tamai, Yasunari Hosoi, Nobuyoshi Awaya, Shigeo Ohnishi, Kazuya Ishihara, Hisashi Shima, Hiroyuki Akinaga, Fumiyoshi Takano
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Patent number: D738379Type: GrantFiled: February 26, 2014Date of Patent: September 8, 2015Assignee: Lenovo (Singapore) Pte. Ltd.Inventors: Harris C. N. Ganey, David W. Hill, Go Osaki, Hisashi Shima, Aaron Michael Stewart, John D. Swansey, Tomoyuki Takahashi