Patents by Inventor Hisashi Tazawa

Hisashi Tazawa has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 8765233
    Abstract: A method of forming a low-carbon silicon-containing film by CVD on a substrate having trenches includes: introducing a silicon-containing compound having three or less hydrocarbon units in its molecule and having a boiling temperature of 35° C. to 220° C.; applying RF power to the gas; and depositing a film on a substrate having trenches wherein the substrate is controlled at a temperature such that components of the silicon-containing compound are at least partially liquidified on the substrate, thereby filling the trenches with the film.
    Type: Grant
    Filed: December 9, 2008
    Date of Patent: July 1, 2014
    Assignee: ASM Japan K.K.
    Inventors: Atsuki Fukazawa, Hisashi Tazawa, Shigeyuki Onizawa
  • Patent number: 7825040
    Abstract: A method of filling a recess with an insulation film includes: introducing an alkoxysilane or aminosilane precursor containing neither a Si—C bond nor a C—C bond into a reaction chamber where a substrate having an irregular surface including a recess is placed; and depositing a flowable Si-containing insulation film on the irregular surface of the substrate to fill the recess therewith by plasma reaction at ?50° C. to 100° C.
    Type: Grant
    Filed: June 22, 2009
    Date of Patent: November 2, 2010
    Assignee: ASM Japan K.K.
    Inventors: Atsuki Fukazawa, Hisashi Tazawa, Jeongseok Ha, Shintaro Ueda
  • Publication number: 20100143609
    Abstract: A method of forming a low-carbon silicon-containing film by CVD on a substrate having trenches includes: introducing a silicon-containing compound having three or less hydrocarbon units in its molecule and having a boiling temperature of 35° C. to 220° C.; applying RF power to the gas; and depositing a film on a substrate having trenches wherein the substrate is controlled at a temperature such that components of the silicon-containing compound are at least partially liquidified on the substrate, thereby filling the trenches with the film.
    Type: Application
    Filed: December 9, 2008
    Publication date: June 10, 2010
    Applicant: ASM JAPAN K.K.
    Inventors: Atsuki Fukazawa, Hisashi Tazawa, Shigeyuki Onizawa
  • Patent number: 7283200
    Abstract: A measurement system (222) for measuring the position of a stage (248) along a first axis includes a first system (260) having a first beam source (260A) that directs a first beam (260H) on a first path that is parallel with a second axis and a first redirector (260D) that redirects the first beam so that the redirected first beam (260H) is on a first redirected path that is parallel with the first axis irrespective to the orientation of the first redirector (260D) about a third axis. The measurement system (222) can include a shield (380) that protects the first beam (260H) from environmental conditions.
    Type: Grant
    Filed: July 17, 2003
    Date of Patent: October 16, 2007
    Assignee: Nikon Corporation
    Inventors: Alex Ka Tim Poon, Leonard Wai Fung Kho, Toru Kawaguchi, Hisashi Tazawa, Saburo Kamiya, Yasuhiro Hidaka
  • Publication number: 20050012918
    Abstract: A measurement system (222) for measuring the position of a stage (248) along a first axis includes a first system (260) having a first beam source (260A) that directs a first beam (260H) on a first path that is parallel with a second axis and a first redirector (260D) that redirects the first beam so that the redirected first beam (260H) is on a first redirected path that is parallel with the first axis irrespective to the orientation of the first redirector (260D) about a third axis. The measurement system (222) can include a shield (380) that protects the first beam (260H) from environmental conditions.
    Type: Application
    Filed: July 17, 2003
    Publication date: January 20, 2005
    Inventors: Alex Poon, Leonard Kho, Toru Kawaguchi, Hisashi Tazawa, Saburo Kamiya, Yasuhiro Hidaka
  • Patent number: 6405610
    Abstract: This invention relates to a wafer inspection apparatus having various types of structures for realizing a reduction in convey time of a selected wafer as an inspection target, an improvement in operability, or the like. In particular, this wafer inspection apparatus has a first convey system and a second convey system. The first convey system is movable in a direction perpendicular to a wafer convey reference surface and has a plurality of arm portions operable independently of each other. The second convey system has a plurality of rotary arm portions that are movable in the direction perpendicular to the wafer convey reference surface. Thus, a structure in which the wafer convey time is shorter than in a conventional wafer inspection apparatus is realized. This wafer inspection apparatus also has a lifting unit with a specific structure, thus realizing an improvement in operability of the apparatus or the like.
    Type: Grant
    Filed: June 1, 1999
    Date of Patent: June 18, 2002
    Assignee: Nikon Corporation
    Inventors: Manabu Komatsu, Kurata Honma, Akitoshi Kawai, Hisashi Tazawa, Tsuneo Hasegawa
  • Patent number: 5766720
    Abstract: An absorber of impact-caused vibrations which is excellent in absorbing impact-caused vibrations, particularly relates to vibration absorption from sports instruments, tools or bicycle associated with impact-caused vibrations, for example, with the absorber of impact-caused vibrations made of a weight and an elastomer attached to a part of devices such as grip end, absorbs impact-caused vibration energy by converting impact-caused vibrations of devices to moving energy of a weight.
    Type: Grant
    Filed: August 2, 1995
    Date of Patent: June 16, 1998
    Assignee: Toray Industries, Inc.
    Inventors: Masahiro Yamagishi, Hisashi Tazawa, Takehiro Hirahara