Abstract: To provide a plasma device that all functions required for a plasma etching process are incorporated into a narrow space of a minimal fabrication manufacturing device. A plasma processing chamber for performing the plasma etching process on a semiconductor wafer is provided, and a micro-plasma supply section and a lower electrode that superimposes RF on supplied micro-plasma are provided in the plasma processing chamber. A wafer support device that supports the semiconductor wafer supports the semiconductor wafer in the plasma processing chamber during the etching process. The wafer support device is coupled to and supported by a drive section that is arranged outside the plasma processing chamber. The drive section makes the wafer support device repetitively move scanningly in the plasma processing chamber in parallel with a wafer processing surface during the etching process.

Abstract: An angle compensation method compensates for the angle of the light-receiving surface of a photodiode disposed in an inclination detection device. The light-receiving surface is divided into four parts by an a-axis and a b-axis disposed perpendicular to each other and receives light reflected from an object surface that is an X-Y plane. The inclination detection device seeks the inclination of the object surface from changes in the irradiation position of the light reflected onto the photodiode light-receiving surface.

Abstract: An angle compensation method compensates for the angle of the light-receiving surface of a photodiode disposed in an inclination detection device. The light-receiving surface is divided into four parts by an a-axis and a b-axis disposed perpendicular to each other and receives light reflected from an object surface that is an X-Y plane. The inclination detection device seeks the inclination of the object surface from changes in the irradiation position of the light reflected onto the photodiode light-receiving surface.