Patents by Inventor Hisatoshi Hata

Hisatoshi Hata has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20240145324
    Abstract: Plural hollow structure bodies (3) are formed in a semiconductor substrate (1) in an array manner. The Plural hollow structure bodies (3) have a detection part (4) as a hollow structure and a getter part (5) as a hollow structure different from the detection part (4). A support body (6) demarcates the plural hollow structure bodies (3). The detection part (4) has a detection device (14) inside. The getter part (5) has a getter (16) inside. The detection part (4) and the getter part (5) are spatially joined together by a tunnel portion (7) formed in the support body (6).
    Type: Application
    Filed: March 1, 2022
    Publication date: May 2, 2024
    Applicant: Mitsubishi Electric Corporation
    Inventors: Misaki HANAOKA, Hisatoshi HATA
  • Patent number: 7145144
    Abstract: A thermal infrared sensor device includes a substrate having a concave portion, a temperature detecting portion connected to the substrate via a supporting leg held at an upper portion of a space within the concave portion, an infrared reflecting film covering at least a portion of the supporting leg without being thermally connected to the temperature detecting portion, and an absorbing hood portion held opposite the infrared reflecting film and thermally connected to the temperature detecting portion, without being thermally connected to the infrared reflecting film, and extending laterally, in a plate shape, covering at least a portion of the infrared reflecting film.
    Type: Grant
    Filed: May 28, 2004
    Date of Patent: December 5, 2006
    Assignee: Mitsubishi Denki Kabushiki Kaisha
    Inventors: Yoshiyuki Nakaki, Yoshio Fujii, Hisatoshi Hata, Hiromoto Inoue
  • Publication number: 20050178967
    Abstract: A thermal infrared sensor device includes a substrate having a concave portion, a temperature detecting portion connected to the substrate via a supporting leg held at an upper portion of a space within the concave portion, an infrared reflecting film covering at least a portion of the supporting leg without being thermally connected to the temperature detecting portion, and an absorbing hood portion held opposite the infrared reflecting film and thermally connected to the temperature detecting portion, without being thermally connected to the infrared reflecting film, and extending laterally, in a plate shape, covering at least a portion of the infrared reflecting film.
    Type: Application
    Filed: May 28, 2004
    Publication date: August 18, 2005
    Applicant: Mitsubishi Denki Kabushiki Kaisha
    Inventors: Yoshiyuki Nakaki, Yoshio Fujii, Hisatoshi Hata, Hiromoto Inoue
  • Patent number: 6031231
    Abstract: A two-dimensional infrared focal plane array of temperature detecting units is provided with the temperature detecting units being arranged for every pixel in a two-dimensional arrangement on a semiconductor substrate. Each temperature detecting unit is formed integrally with readout circuitry. Each temperature detecting unit further has a temperature detecting portion which is supported by support legs made of a high thermal resistance material to reduce heat flow to the semiconductor substrate. Each temperature detecting unit also has a temperature detecting element with an infrared ray absorbing portion which is spliced by at least one splicing pillar with the temperature detecting element.
    Type: Grant
    Filed: September 10, 1997
    Date of Patent: February 29, 2000
    Assignee: Mitsubishi Denki Kabushiki Kaisha
    Inventors: Masafumi Kimata, Tomohiro Ishikawa, Kazuhiko Tsutsumi, Hisatoshi Hata
  • Patent number: 5998816
    Abstract: A sensor element provided with a silicon substrate having a semiconductor circuit, a sensing-element portion formed on the silicon substrate and connected to the semiconductor circuit, and a cavity portion formed by removing a silicon substrate portion below the sensing-element portion, in which a removal resistance region having resistance against substrate removal is provided in the silicon substrate between the semiconductor circuit and the cavity portion.
    Type: Grant
    Filed: September 10, 1997
    Date of Patent: December 7, 1999
    Assignee: Mitsubishi Denki Kabushiki Kaisha
    Inventors: Yoshiyuki Nakaki, Tomohiro Ishikawa, Masashi Ueno, Hisatoshi Hata, Masafumi Kimata