Abstract: A method for fabricating a semiconductor device on a silicon substrate, consists of producing a silicon oxide film on the silicon substrate producing a thin silicon nitride film on the silicon oxide film, thermally nitriding the silicon nitride film in an atmosphere of nitrogenous gas, producing a conductive film on the silicon nitride film nitrided in the atmosphere of the nitrogenous gas, producing a gate region from the silicon oxide film, the silicon nitride film, and the conductive film, a channel region being positioned under the gate region in the silicon substrate, producing a source region in the silicon substrate adjacent to one side of the channel region, producing a drain region in the silicon substrate adjacent to another side of the channel region, and producing wiring regions on the source region, the drain region, and the gate region.

Abstract: A semiconductor device formed on a silicon substrate consisting of the steps of producing a silicon oxide film on the silicon substrate, producing a thin silicon nitride film on the silicon oxide film, thermally nitriding the silicon nitride film in an atmosphere of nitrogenous gas, producing a conductive film on the silicon nitride film nitrided in the atmosphere of the nitrogenous gas, producing a gate region from the silicon oxide film, the silicon nitride film, and the conductive film, a channel region being positioned under the gate region in the silicon substrate, producing a source region in the silicon substrate adjacent to one side of the channel region, producing a drain region in the silicon substrate adjacent to another side of the channel region, and producing wiring regions on the source region, the drain region, and the gate region.

Abstract: An insulating layer is formed on a transistor having a source region/drain region and a gate electrode. Contact holes are formed in this insulating layer in association with the source region/drain region and the gate electrode. A memory element having a ferroelectric substance layer is provided in that contact hole which is associated with the source region/drain region. This memory element comprises a first electrode provided on the source region/drain region, a ferroelectric substance layer provided on the first electrode, and a second electrode provided on the ferroelectric substance layer. Providing this memory element in the contact hole which is associated with the source region/drain region can make cells flatter and permit metal wires to be surely formed in the contact holes.