Patents by Inventor Hisayuki Takesue

Hisayuki Takesue has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Method and apparatus for manufacturing trichlorosilane
    Patent number: 9533279
    Abstract: A method and an apparatus for manufacturing trichlorosilane are disclosed. A polymer containing high boiling chlorosilane compounds that are generated in a polycrystalline silicon manufacturing process are mixed with hydrogen chloride and introduced into a decomposition furnace. The polymer and the hydrogen chloride are reacted at a temperature of 450° C., and preferably of 450° C. or more and 700° C. or less. Preferably a mixture containing the polymer and hydrogen chloride of 10 to 30 mass % with respect to the weight of the polymer is introduced into the decomposition furnace.
    Type: Grant
    Filed: February 26, 2009
    Date of Patent: January 3, 2017
    Assignee: MITSUBISHI MATERIALS CORPORATION
    Inventors: Noboru Tachino, Hisayuki Takesue, Harumi Satoh
  • Method and apparatus for manufacturing trichlorosilane
    Publication number: 20090220403
    Abstract: A method and an apparatus for manufacturing trichlorosilane are disclosed. A polymer containing high boiling chlorosilane compounds that are generated in a polycrystalline silicon manufacturing process are mixed with hydrogen chloride and introduced into a decomposition furnace. The polymer and the hydrogen chloride are reacted at a temperature of 450° C., and preferably of 450° C. or more and 700° C. or less. Preferably a mixture containing the polymer and hydrogen chloride of 10 to 30 mass % with respect to the weight of the polymer is introduced into the decomposition furnace.
    Type: Application
    Filed: February 26, 2009
    Publication date: September 3, 2009
    Applicant: MITSUBISHI MATERIALS CORPORATION
    Inventors: Noboru Tachino, Hisayuki Takesue, Harumi Satoh
  • Process for producing hexachlorodisilane
    Patent number: 6846473
    Abstract: A process for producing hexachlorodisilane comprising, condensing an exhaust gas discharged from a reactor for producing polycrystalline silicon from a chlorosilane and hydrogen to separate the hydrogen, distilling the resultant condensate to separate the unreacted chlorosilane and by-product silicon tetrachloride, and then further distilling to recover hexachlorodisilane, wherein tetrachlorodisilane can be recovered together with the hexachlorodisilane, and the hexachlorodisilane and tetrachlorodisilane recovered have a far higher purity than the conventional ones produced from metallic silicon.
    Type: Grant
    Filed: April 2, 2002
    Date of Patent: January 25, 2005
    Assignee: Mitsubishi Materials Polycrystalline Silicon Corporation
    Inventors: Seiichi Kirii, Mitsutoshi Narukawa, Hisayuki Takesue
  • Process for producing hexachlorodisilane
    Publication number: 20030147798
    Abstract: A process for producing hexachlorodisilane comprising, condensing an exhaust gas discharged from a reactor for producing polycrystalline silicon from a chlorosilane and hydrogen to separate the hydrogen, distilling the resultant condensate to separate the unreacted chlorosilane and by-product silicon tetrachloride, and then further distilling to recover hexachlorodisilane, wherein tetrachlorodisilane can be recovered together with the hexachlorodisilane, and the hexachlorodisilane and tetrachlorodisilane recovered have a far higher purity than the conventional ones produced from metallic silicon.
    Type: Application
    Filed: April 2, 2002
    Publication date: August 7, 2003
    Applicant: MITSUBISHI MATERIALS CORP.
    Inventors: Seiichi Kirii, Mitsutoshi Narukawa, Hisayuki Takesue