Patents by Inventor Hitoshi ARIMITSU

Hitoshi ARIMITSU has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 9811429
    Abstract: The present invention provides a microcontroller which can continue operation even at the time of a failure without making a memory redundant to suppress increase in chip area. The microcontroller includes three or more processors executing the same process in parallel and a storage device. The storage device includes a memory mat having a storage region which is not redundant, an address selection part, a data output part, and a failure recovery part. The address selection part selects a storage region in the memory mat on the basis of three or more addresses issued at the time of an access by the processors. The data output part reads data from the storage region in the memory mat selected by the address selection part. The failure recovery part corrects or masks a failure of predetermined number or less which occurs in the memory mat, the address selection part, and the data output part.
    Type: Grant
    Filed: May 6, 2015
    Date of Patent: November 7, 2017
    Assignee: Renesas Electronics Corporation
    Inventors: Nobuyasu Kanekawa, Hitoshi Arimitsu, Takashi Yasumasu, Hideki Matsuyama
  • Publication number: 20150339201
    Abstract: The present invention provides a microcontroller which can continue operation even at the time of a failure without making a memory redundant to suppress increase in chip area. The microcontroller includes three or more processors executing the same process in parallel and a storage device. The storage device includes a memory mat having a storage region which is not redundant, an address selection part, a data output part, and a failure recovery part. The address selection part selects a storage region in the memory mat on the basis of three or more addresses issued at the time of an access by the processors. The data output part reads data from the storage region in the memory mat selected by the address selection part. The failure recovery part corrects or masks a failure of predetermined number or less which occurs in the memory mat, the address selection part, and the data output part.
    Type: Application
    Filed: May 6, 2015
    Publication date: November 26, 2015
    Applicant: RENESAS ELECTRONICS CORPORATION
    Inventors: Nobuyasu KANEKAWA, Hitoshi ARIMITSU, Takashi YASUMASU, Hideki MATSUYAMA