Abstract: An ultrapure water production system that can stably produce ultrapure water having a boron concentration of 1 ng/L or less or a metal concentration of 0.1 ng/L or less, a method for producing ultrapure water using the ultrapure water production system, and a method and a system for washing electronic component members. In an ultrapure water production system that includes a mixed-bed deionization apparatus 16, which includes an anion-exchange resin and a cation-exchange resin, as a final deionization apparatus, the anion-exchange resin is an anion-exchange resin that has been verified to have a boron content of 50 ?g/L-anion-exchange resin (wet condition) or less or an anion-exchange resin in which the amount of leached cation is 100 ?g/L-anion-exchange resin (wet condition) or less.

Abstract: A first semiconductor laser element and a second semiconductor laser element are arranged on an identical block, a first electrode of the first semiconductor laser element is in direct contact with the block, and heat radiating effect is high. A second electrode of the second semiconductor laser element is arranged on an insulating dielectric layer, and the block and second semiconductor laser element are electrically insulated. Therefore, irrespective of the material to compose the block, the first semiconductor laser element and the second semiconductor laser element can be independently driven. In addition, the light emitting point distance between the first semiconductor laser element and second semiconductor laser element is limited only by the distance between the electrodes of the respective semiconductor lasers and the positions of light emitting points on the semiconductor laser chip end face and can, therefore, be made as short as possible.

Abstract: A method of formation of a coating film on the surface of a cylindrical base material such as a piston wherein a waste of the lubricant coating solution is prevented and a lubrication action is maintained. A cylindrical base material is rotably supported horizontally on a rotating support device and in rotation, a coating solution is supplied to a coating surface, and a coating film is coated on the surface of the cylindrical base material. A coating former equipped with a blade is inclined at an angle of 20° to 80° with respect to a tangential direction of rotation, the blade is separated from the coating surface by exactly a coating layer thickness, and further the cylindrical base material is rotated by ¼ of a turn or more.

Abstract: A semiconductor laser device includes an active layer and first and second current blocking layers having aligned stripe openings for injecting operating current into the active layer in a current injection area. The second current blocking layer has another opening, through which the first current blocking layer contacts an external cladding layer, in the vicinity of the emission facet of the laser cavity to form a current non-injection area. The first current blocking layer and the external cladding layer have a substantially equal refractive index.

Abstract: A first semiconductor laser element and a second semiconductor laser element are arranged on an identical block, a first electrode of the first semiconductor laser element is in direct contact with the block, and heat radiating effect is high. A second electrode of the second semiconductor laser element is arranged on an insulating dielectric layer, and the block and second semiconductor laser element are electrically insulated. Therefore, irrespective of the material to compose the block, the first semiconductor laser element and the second semiconductor laser element can be independently driven. In addition, the light emitting point distance between the first semiconductor laser element and second semiconductor laser element is limited only by the distance between the electrodes of the respective semiconductor lasers and the positions of light emitting points on the semiconductor laser chip end face and can, therefore, be made as short as possible.

Abstract: A semiconductor laser device includes an active layer and first and second current blocking layers having aligned stripe openings for injecting operating current into the active layer in a current injection area. The second current blocking layer has another opening, through which the first current blocking layer contacts an external cladding layer, in the vicinity of the emission facet of the laser cavity to form a current non-injection area. The first current blocking layer and the external cladding layer have a substantially equal refractive index.

Abstract: A semiconductor laser device includes an inner lower clad layer formed on a semiconductor layer, an active layer formed on the inner lower clad layer, an inner upper clad layer formed the active layer, a blocking layer formed on the inner upper clad layer to block current, wherein the blocking layer having a concave portion, and an outer upper clad layer formed to cover the blocking layer. Carriers are injected to the active layer through the outer upper clad layer and the concave portion of the blocking layer.

Abstract: The present invention provides a method of formation of a coating film such as a lubricant coating on the surface of a cylindrical base material such as a piston wherein a waste of the lubricant coating solution is prevented and a lubrication action is maintained and a coating layer forming apparatus used for the same.

Abstract: A semiconductor laser device includes an inner lower clad layer formed on a semiconductor layer, an active layer formed on the inner lower clad layer, an inner upper clad layer formed the active layer, a blocking layer formed on the inner upper clad layer to block current, wherein the blocking layer having a concave portion, and an outer upper clad layer formed to cover the blocking layer. Carriers are injected to the active layer through the outer upper clad layer and the concave portion of the blocking layer.

Abstract: A p-type saturable light absorbing layer is provided between p-type AlGaInP clad layers. Oxygen is doped in the p-type saturable light absorbing layer to generate non-luminescent recombination center, thereby consuming minority carrier. By this, minority carrier life of the p-type saturable light absorbing layer is lowered without saturation. Therefore, saturable light absorbing amount necessary for self-pulsation can be reduced to achieve a semiconductor laser with low threshold value, low drive current and high reliability.

Abstract: Disclosed herein is a selective metalorganic vapor phase growth method of a group III-V compound semiconductor containing at least Al and In, in which a ratio of an HCl gas supply amount to a supply amount of a group III metalorganic material (?HCl supply amount!/?group III supply amount!) is set in a range of 0.01-0.3. Hence, a polycrystal density is decreased to ensure a selectivity, and a grown crystal composition can be controlled so as not to be excessive in the Al composition so that composition control can be done easily.

Abstract: A semiconductor laser having improved reliability. The laser contains an AlGaInP first cladding layer of a first conductivity type, an AlGaInP second cladding layer of a second conductivity type that forms a mesa stripe, an active layer made of an undoped GaInP layer, an undoped AlGaInP layer, or a quantum well layer of an undoped GaInP sublayer and an undoped AlGaInP sublayer. The laser further contains a burying layer made of an Al.sub.x In.sub.1-x P or (Al.sub.y Ga.sub.1-y).sub.x In.sub.1-x P layer, which is placed at both sides of the mesa stripe to bury the stripe. The burying layer is larger in energy band gap than the active layer and smaller in refractive index than the second cladding layer. The burying layer has first regions that are contacted with and extend along respective side faces of the mesa stripe. An Al composition x of the first regions is set so that the first regions are lattice-matched to GaAs.

Abstract: A semisubmersible system for collecting a desired material from the sea water includes a submersible collection chamber which is defined by a pair of non-porous, buoyant side walls, a pair of non-porous end walls, a porous top wall and a porous bottom wall. A quantity of collecting agent is contained in the collection chamber. The buoyancy force applied to the present system by the pair of buoyant side walls is so set to keep the collection chamber substantially at a predetermined depth from the sea surface, so that the sea water is permitted to move into and out of the collection chamber due to wave motion while keeping the collection chamber virtually stationary in the vertical direction. There is obtained a large relative motion between the sea water and the collection chamber so that a large quantity of sea water is brought into contact with the collecting agent, thereby allowing a useful material contained in the sea water to be collected by the collecting agent by adsorption or absorption.