Abstract: A semiconductor device with a novel structure is provided. The semiconductor device includes an oscillation circuit including a first coil, a second coil, a first capacitor, a second capacitor, a first transistor, and a second transistor and a frequency correction circuit including a third capacitor, a fourth capacitor, a third transistor, a fourth transistor, and a switching circuit. The switching circuit has a function of controlling a conduction state or a non-conduction state of the third transistor and the fourth transistor. The frequency correction circuit is provided above the oscillation circuit and has a function of adjusting an oscillation frequency of the oscillation circuit. The first transistor and the second transistor each include a semiconductor layer containing silicon in a channel formation region. The third transistor and the fourth transistor each include a semiconductor layer containing an oxide semiconductor in a channel formation region.

Abstract: A pseudo-static random access memory includes a control unit, which controls the refresh operations of the memory to be performed as many times as the number of refresh requests that are generated during a period after the first transaction ended and before a second transaction which is after the first transaction.

Abstract: An image capturing apparatus which a lens unit is interchangeable, comprises an image capturing unit which captures images using an image sensor, an synthesizing unit which synthesizes a plurality of images, and a controlling unit which controls predetermined synthesis processing for creating a synthetic image by causing the synthesizing unit to synthesize a plurality of images that have been obtained by the image capturing unit performing image capturing a plurality of times, wherein, if it is judged that a lens unit that has been replaced after a first image for the synthesis processing was acquired is a lens unit having an image circle that is different from that of a lens unit that was mounted before the replacement, the controlling unit controls the image capturing unit to not capture a new image for creating the synthetic image.

Abstract: An energy usage management with less equipment load and processing load is realized.

Abstract: A pseudo-static random access memory is provided herein, which may improve the speed of data transmission. After a first delay from a command and a row address being input in a first operation, the pseudo-static random access memory inputs or outputs the data in the memory cells corresponding to the input row address and the input column address, which includes a control unit controlling a delay in the second operation less than the initial delay when a specific condition is satisfied. The second operation is executed after the first operation.

Abstract: An image processing apparatus that can easily change the categories of the main object, comprises, an object detection unit for detecting an object categorized as one of at least two categories from an image, a setting unit for setting a first category as a priority category on an object having a predetermined priority among one of the objects detected by the object detection unit; and a region designation unit for designating a predetermined region on an object on a display screen, wherein the setting unit can change the priority category from the first category to a second category different from the first category when the predetermined region of the object designated by the region designation unit is the second category.

Abstract: An image capturing apparatus which a lens unit is interchangeable, comprises an image capturing unit which captures images using an image sensor, an synthesizing unit which synthesizes a plurality of images, and a controlling unit which controls predetermined synthesis processing for creating a synthetic image by causing the synthesizing unit to synthesize a plurality of images that have been obtained by the image capturing unit performing image capturing a plurality of times, wherein, if it is judged that a lens unit that has been replaced after a first image for the synthesis processing was acquired is a lens unit having an image circle that is different from that of a lens unit that was mounted before the replacement, the controlling unit controls the image capturing unit to not capture a new image for creating the synthetic image.

Abstract: An image processing apparatus that can easily change the categories of the main object, comprises, an object detection unit for detecting an object categorized as one of at least two categories from an image, a setting unit for setting a first category as a priority category on an object having a predetermined priority among one of the objects detected by the object detection unit; and a region designation unit for designating a predetermined region on an object on a display screen, wherein the setting unit can change the priority category from the first category to a second category different from the first category when the predetermined region of the object designated by the region designation unit is the second category.

Abstract: There is provided a tissue elasticity measurement device 100 and a measurement method that allow for quantitative evaluation of biological changes related to tissue elasticity such as liver fibrosis. The tissue elasticity measurement device 100 has a supersonic wave measuring instrument 100a that measures a pulse waveform corresponding to a blood flow velocity by a pulse wave Doppler method, and an information processor 100b that calculates a deviation index value corresponding to a coefficient of variation from a pulse waveform obtained by the supersonic wave measuring instrument 100a.

Abstract: An image capturing apparatus which a lens unit is interchangeable, comprises an image capturing unit which captures images using an image sensor, an synthesizing unit which synthesizes a plurality of images, and a controlling unit which controls predetermined synthesis processing for creating a synthetic image by causing the synthesizing unit to synthesize a plurality of images that have been obtained by the image capturing unit performing image capturing a plurality of times, wherein, if it is judged that a lens unit that has been replaced after a first image for the synthesis processing was acquired is a lens unit having an image circle that is different from that of a lens unit that was mounted before the replacement, the controlling unit controls the image capturing unit to not capture a new image for creating the synthetic image.

Abstract: A method for manufacturing a SiC single crystal reducing crystallinity degradation at a wafer central portion wherein a growth container surrounds a heat-insulating material with a top temperature measurement hole, a seed crystal substrate at an upper portion inside the container, and a silicon carbide raw material at a lower portion of the container and sublimated to grow a SiC single crystal on the seed crystal substrate. A center position hole deviates from a center position of the seed crystal substrate and moves to the periphery side of the center of the seed crystal substrate. A SiC single crystal substrate surface is tilted by a {0001} plane and used as the seed crystal substrate. The SiC single crystal grows with the seed crystal substrate directed to a normal vector of the seed crystal substrate basal plane parallel to the main surface and identical to the hole in a cross-sectional view.

Abstract: An image capturing apparatus which a lens unit is interchangeable, comprises an image capturing unit which captures images using an image sensor, an synthesizing unit which synthesizes a plurality of images, and a controlling unit which controls predetermined synthesis processing for creating a synthetic image by causing the synthesizing unit to synthesize a plurality of images that have been obtained by the image capturing unit performing image capturing a plurality of times, wherein, if it is judged that a lens unit that has been replaced after a first image for the synthesis processing was acquired is a lens unit having an image circle that is different from that of a lens unit that was mounted before the replacement, the controlling unit controls the image capturing unit to not capture a new image for creating the synthetic image.

Abstract: A memory system and an operating method thereof are provided. The memory system includes a plurality of pseudo static random access memory chips and a memory controller. The pseudo static random access memory chips are coupled to each other. When receiving an action command, each of the pseudo static random access memory chips determines whether a refresh collision occurs in itself, and generates a collision signal accordingly. The memory controller controls the pseudo static random access memory chips according to the collision signal. All of the pseudo static random access memory chips share their respective collision signals to perform a same latency synchronously.

Abstract: A method for manufacturing a SiC single crystal having a growth container surrounded by a heat-insulating material, a seed crystal substrate disposed inside a top at a center of the container, a silicon carbide raw material disposed at a bottom of the container to sublimate and grow a SiC crystal to allow a center of the hole to deviate from a center position of the seed substrate to a position on a periphery side, a SiC substrate having a main surface tilted from a {0001} plane wherein a basal plane is used and grown with the seed substrate so that a direction of a component of a normal vector of the basal plane of the seed substrate parallel to the main surface and an eccentric direction of the hole are opposite directions in a cross-sectional view including the center of the seed substrate and the center of the hole.

Abstract: An image capturing apparatus which a lens unit is interchangeable, comprises an image capturing unit which captures images using an image sensor, an synthesizing unit which synthesizes a plurality of images, and a controlling unit which controls predetermined synthesis processing for creating a synthetic image by causing the synthesizing unit to synthesize a plurality of images that have been obtained by the image capturing unit performing image capturing a plurality of times, wherein, if it is judged that a lens unit that has been replaced after a first image for the synthesis processing was acquired is a lens unit having an image circle that is different from that of a lens unit that was mounted before the replacement, the controlling unit controls the image capturing unit to not capture a new image for creating the synthetic image.

Abstract: A silicon carbide single crystal growth apparatus including: a growth container including a growth container lid to which a seed crystal substrate is adhered and a growth container body for containing seed crystal substrate and a silicon carbide raw material; a heat-insulating container surrounding growth container; a temperature measuring equipment measuring a temperature inside growth container through a hole for temperature measurement provided in the heat-insulating container; and a heater heating the silicon carbide raw material, where a silicon carbide single crystal is grown on seed crystal substrate by heating and subliming silicon carbide raw material by a sublimation method, where growth container lid has a pattern that penetrates the growth container lid formed only within an adhesion region of the seed crystal substrate on the growth container lid. This provides an apparatus and manufacturing method that can suppress the generation of threading screw, basal plane, and threading edge dislocation.

Abstract: an image processing apparatus that can easily change the categories of the main object, comprises, an object detection unit for detecting an object categorized as one of at least two categories from an image, a setting unit for setting a first category as a priority category on an object having a predetermined priority among one of the objects detected by the object detection unit; and a region designation unit for designating a predetermined region on an object on a display screen, wherein the setting unit can change the priority category from the first category to a second category different from the first category when the predetermined region of the object designated by the region designation unit is the second category.

Abstract: A method for manufacturing a silicon carbide single crystal by sublimating a silicon carbide raw material to grow a silicon carbide single crystal on a seed crystal substrate in an apparatus for growing a silicon carbide single crystal, the apparatus including at least a growth container and a heat-insulating container that surrounds the growth container and has a hole for temperature measurement. The method includes: measuring a temperature of the growth container via the hole for temperature measurement when the silicon carbide single crystal is grown; and blocking the hole for temperature measurement with a blocking member when the silicon carbide single crystal is cooled after the growth of the silicon carbide single crystal is ended. Consequently, a method and apparatus for manufacturing a silicon carbide single crystal are provided to reduce breaking and cracking of the silicon carbide single crystal ingot and wafer.

Abstract: A method for manufacturing a silicon carbide single crystal sublimates a solid silicon carbide raw material in a growth container to grow a silicon carbide single crystal on a seed crystal substrate. The method includes: mixing a tantalum (Ta) powder with a carbon powder; attaching the mixture to the solid silicon carbide raw material in the growth container; and heating the resultant for sintering to form a tantalum carbide (TaC) coating film on a surface of the solid silicon carbide raw material. A silicon carbide single crystal is grown after or while the coating film is formed. Thereby, the method for manufacturing a silicon carbide single crystal has few carbon inclusions.

Abstract: A method for manufacturing a silicon carbide single crystal sublimates a silicon carbide raw material in a growth container to grow a silicon carbide single crystal on a seed crystal substrate. The seed crystal substrate used is a substrate having a {0001} plane with an off angle of 1° or less as a surface to be placed on the growth container, and a convex-shaped end face of a grown ingot as a crystal growth surface. A diameter of the seed crystal substrate is 80% or more of an inner diameter of the growth container. Thereby, the method for manufacturing a silicon carbide single crystal enables high straight-body percentage and little formation of different polytypes even in growth with no off-angle control, i.e., the growth is directed onto a basal plane which is not inclined from a C-axis <0001>.