Abstract: The toner contains binder resin-containing toner particles and silica fine particle S1, wherein the weight-average particle diameter of the toner is 4.0-15.0 ?m, both inclusive, peaks originating with the silica fine particle S1 are observed in 29 Si-NMR measurement of the silica fine particle S1, and, in the spectrum obtained by 29Si CP/MAS NMR or 29Si DD/MAS NMR, the peak area of a peak corresponding to the D1 unit structure in the silica fine particle S1, the peak area of a peak corresponding to the D2 unit structure in the silica fine particle S1, and the peak area of a peak corresponding to the Q unit structure in the silica fine particle S1 satisfy a prescribed relationship.

Abstract: Xylooligosaccharide is produced from a lignocellulose pulp by enzyme-treating a lignocellulose pulp with hemicellulase, filtering the resultant reaction mixture to separate a liquid fraction from the enzyme-treated pulp, subjecting the separated liquid fraction to a permeation treatment through a separation membrane to separate a non-permeated fraction containing xylooligosaccharide-lignin complex with an increased concentration from a permeated fraction, collecting the non-permeated fraction, and separating and recovering xylooligosaccharide from the collected non-permeated fraction.

Abstract: Lignocellulose pulp is bleached by bleaching a pulp in aqueous alkali solution with oxygen and treating the pulp with a hemicellulase, while a liquid fraction delivered from the enzyme treatment step is separated from the hemicellulase treated reaction mixture, and subjected to a penetration treatment through a separation membrane, for example, reverse osmosis membrane, to separate a permeated fraction from a non-permeated fraction; the permeated fraction is fed to the alkali-oxygen bleaching (oxygen delignification) step and is used as a liquid medium of the bleaching system.

Abstract: Xylooligosaccharide is produced from a lignocellulose pulp by enzyme-treating a lignocellulose pulp with hemicellulase, filtering the resultant reaction mixture to separate a liquid fraction from the enzyme-treated pulp, subjecting the separated liquid fraction to a permeation treatment through a separation membrane to separate a non-permeated fraction containing xylooligosaccharide-lignin complex with an increased concentration from a permeated fraction, collecting the non-permeated fraction, and separating and recovering xylooligosaccharide from the collected non-permeated fraction.

Abstract: Lignocellulose pulp is bleached by bleaching a pulp in aqueous alkali solution with oxygen and treating the pulp with a hemicellulase, while a liquid fraction delivered from the enzyme treatment step is separated from the hemicellulase treated reaction mixture, and subjected to a penetration treatment through a separation membrane, for example, reverse osmosis membrane, to separate a permeated fraction from a non-permeated fraction; the permeated fraction is fed to the alkali-oxygen bleaching (oxygen delignification) step and is used as a liquid medium of the bleaching system.

Abstract: An optical semiconductor device including one of a light responsive semiconductor element, a light emitting semiconductor element, and a light responsive and light emitting semiconductor element, and a package hermetically sealing the semiconductor element. The package includes a window of silicon that selectively transmits light incident on the semiconductor element and emitted from the semiconductor element. The Si window is connected to the package body using a solder that makes a eutectic alloy with silicon. In this structure, since the eutectic alloy is produced at the junction of the Si window and the package body, the junction is not adversely affected by external influences, especially temperature. Further, since the Si window does not transmit light in the visible light region, the inside of the package cannot be seen from the outside through the Si window after fabrication of the device.

Abstract: A magneto-optic recording system writes information into a magneto-optic disc by applying a magnetic field to a selected position on the disc while directing a laser beam onto the disc. The laser beam is amplitude-modulated with a test pulse signal including a number of different amplitude pulses to write the test pulse signal in the disc. The test pulses thus written into the disc are read out and the smallest amplitude test pulse which has been read out from the disc is determined. The smallest amplitude depends on the temperature of the disc. The disc is heated in accordance with the determined smallest amplitude.

Abstract: A semiconductor laser device includes a first cladding layer, an active layer, and a second cladding layer with a central ridge on a substrate. A current blocking layer is disposed on the second cladding layer burying the ridge. A contact layer is disposed on the current blocking layer and the ridge. The portion of the second cladding layer adjacent to the active layer has a greater resistivity than a portion of the second cladding layer remote from the active layer, reducing leakage current.

Abstract: A semiconductor laser includes a groove in a GaAs first current blocking layer, which extends to an Al.sub.x Ga.sub.(1-x) As second clad layer beneath the first blocking layer. The width of the groove periodically changes along the length of the resonator. Over the regions of the first current blocking layer where the groove has a smaller width, a Al.sub.z Ga.sub.(1-z) As second current blocking grating layer is formed. An Al.sub.x Ga.sub.(1-x) As third current blocking layer is disposed on the second current blocking layer and the portions of the first current blocking layer not covered by the second current blocking layer. The variation of the width of the groove is achieved by selective etching in gaseous hydrogen chloride by irradiation with an arsenic molecular beam, or by placing a liquid-phase solvent.

Abstract: A monolithic multiple beam semiconductor laser having a low power and a high power beam. A number of factors in the laser are coordinated in order to assure that both the low and high power beams operate at precisely the same frequency. The front and rear facet reflectances of the respective low and high power cavities are coordinated to each other and to the rated operating power levels of the respective lasers to achieve the same operating frequency from both beams. In a particular example, the low power cavity has front and rear facet reflectivities of 30% and a rated output power of 3 mw. The high power cavity has a rated operating power of 20 mw, a front facet reflectivity of 2%, and a rear facet reflectivity of 60%.

Abstract: A semiconductor laser includes a groove in a GaAs first current blocking layer, which extends to an Al.sub.x Ga.sub.(1-x) As second clad layer beneath the first blocking layer. The width of the groove periodically changes along the length of the resonator. Over the regions of the first current blocking layer where the groove has a smaller width, a Al.sub.z Ga.sub.(1-z) As second current blocking grating layer is formed. An Al.sub.x Ga.sub.(1-x) As third current blocking layer is disposed on the second current blocking layer and the portions of the first current blocking layer not covered by the second current blocking layer. The variation of the width of the groove is achieved by selective etching in gaseous hydrogen chloride by irradiation with an arsenic molecular beam, or by selective dissolution in a liquid-phase solvent but not the second current blocking layer.

Abstract: A semiconductor laser includes a facet protection film consisting of an Al.sub.2 O.sub.3 film of optical length .lambda./4 and a SiO.sub.2 film of optical length .lambda./4 produced on the Al.sub.2 O.sub.3 film, and the facet reflectivity takes a value with in 21.+-.3%.

Abstract: A semiconductor laser device comprises a substrate (7) formed of p type GaAs, a laser diode portion (10) capable of laser oscillation and a monitor photodiode portion (11) capable of photoelectric conversion formed on substrate (7). The laser diode portion (10) and the monitor photodiode portion (11) are both formed of an epitaxial separating layer (6) of p type AlAs, an epitaxial layer group (23) mainly formed of a material of AlGaAs system and an epitaxial window layer (9) formed on a cleavage plane of this epitaxial layer group (23). The cleavage plane of the epitaxial window layer (9) on the side of the laser diode portion (10) constitutes a laser resonator plane (16) for laser light output of said laser diode portion (10) while the cleavage plane of the epitaxial window layer (9) on the monitor photodiode portion (11) constitutes a light receiving plane (17) for receiving the laser light outputted from the laser resonator plane (16).

Abstract: A semiconductor laser device comprises a substrate (7) formed of p type GaAs, a laser diode portion (10) capable of laser oscillation and a monitor photodiode portion (11) capable of photoelectric conversion formed on substrate (7). The laser diode portion (10) and the monitor photodiode portion (11) are both formed of an epitaxial separating layer (6) of p type AlAs, an epitaxial layer group (23) mainly formed of a material of AlGaAs system and an epitaxial window layer (9) formed on a cleavage plane of this epitaxial layer group (23). The cleavage plane of the epitaxial window layer (9) on the side of the laser diode portion (10) constitutes a laser resonator plane (16) for laser light output of said laser diode portion (10) while the cleavage plane of the epitaxial window layer (9) on the monitor photodiode portion (11) constitutes a light receiving plane (17) for receiving the laser light outputted from the laser resonator plane (16).