Abstract: A method is provided that includes receiving, from a user, a request related to a target and determining if one or more records in a repository are associated with the target. Each record includes identifiers for retrieving digital activity associated with an individual from a plurality of environments. The method further includes generating one or more new record based on identifiers from a directory service related to the target and not associated with a record in the repository; retrieving digital activity based on the one or more records from the repository, new records, and the user record associated with the request; determining a target profile based on at least the retrieved digital activity associated with the user record; generating a response based on digital activity for the target profile; and transmitting the response.

Abstract: A method is provided that includes activating an application on a first device of a first user, and detecting a second device of a second user. The method further includes, in response to a first user input of the first user to the first device and a second user input of the second user to the second device, transmitting first information of the first user to the second decide and transmitting second information of the second user to the first device, and associating the first information and the second information with social network information of the first user and the second user. Social networking service accounts of the first user and the second user may be associated automatically, and the social graphs of the users may be displayed with respect to other users.

Abstract: A field effect semiconductor device comprises a P-N junction with a depletion layer responsive to radiant energy for controllably enabling the field effect semiconductor device. The depletion layer occurs near at least a pair of gate locations within a silicon substrate. The gate locations are of P-type while the silicon substrate is of N-type. The depletion layer is rendered ineffective by photoelectromotive force derived from the radiant energy. A channel emerges according to the shrinkage of the depletion layer to thereby provide electrical connection between a source and drain electrodes of the field effect transistor.

Abstract: A photoelectric semiconductor device is disclosed which exhibits a reduced spectral sensitivity in a desired wavelength zone. An N(P) type impurity region is formed in a P(N) type semiconductor substrate to establish a first PN junction functioning as a first photodiode. A P(N) type impurity region is shallowly formed in the N(P) type impurity region to establish a second PN junction functioning as a second photodiode. When the first PN junction is shunted, the photoelectric semiconductor device shows a spectral sensitivity which is reduced in the longer wavelength zone. Contrarily, when the second PN junction is shunted, the photoelectric semiconductor device shows the spectral sensitivity which is reduced in the shorter wavelength zone.

Abstract: Disclosed is a solid state wavelength detection system responding to output signals derived from a photoelectric semiconductor device. The photoelectric semiconductor device comprise at least two PN junctions formed at different depth from the surface of the semiconductor substrate. A deeper PN junction develops an output signal related to longer wavelength component of the light impinging thereon. A shallower PN junction develops an output signal related to shorter wavelength component of the impinging light. These two output signals are logarithmically compressed and compared with each other. Difference of the logarithmically compressed output signals represents the wavelength information of the impinging light.