Patents by Inventor Hitoshi MINAKUCHI

Hitoshi MINAKUCHI has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 11646392
    Abstract: A method of manufacturing a light-emitting device includes: providing a substrate having a first surface and a second surface opposite to the first surface; forming, on or above the first surface of the substrate, a semiconductor structure comprising a light-emitting layer; forming a crack inside the substrate, the crack reaching the first surface of the substrate; disposing a wavelength conversion layer on the second surface of the substrate; forming a first recess in the wavelength conversion layer by removing a first portion of the wavelength conversion layer, the first portion overlapping with the crack when viewed in a direction from the wavelength conversion layer toward the semiconductor structure, and leaving a second portion of the wavelength conversion layer between the first recess and the semiconductor structure; and cleaving the second portion along the crack.
    Type: Grant
    Filed: June 8, 2021
    Date of Patent: May 9, 2023
    Assignee: NICHIA CORPORATION
    Inventors: Keiji Sakamoto, Takashi Abe, Hitoshi Minakuchi, Tsuyoshi Ito, Katsuyuki Kawabata, Kenji Hashizume
  • Publication number: 20210384375
    Abstract: A method of manufacturing a light-emitting device includes: providing a substrate having a first surface and a second surface opposite to the first surface; forming, on or above the first surface of the substrate, a semiconductor structure comprising a light-emitting layer; forming a crack inside the substrate, the crack reaching the first surface of the substrate; disposing a wavelength conversion layer on the second surface of the substrate; forming a first recess in the wavelength conversion layer by removing a first portion of the wavelength conversion layer, the first portion overlapping with the crack when viewed in a direction from the wavelength conversion layer toward the semiconductor structure, and leaving a second portion of the wavelength conversion layer between the first recess and the semiconductor structure; and cleaving the second portion along the crack.
    Type: Application
    Filed: June 8, 2021
    Publication date: December 9, 2021
    Applicant: NICHIA CORPORATION
    Inventors: Keiji SAKAMOTO, Takashi ABE, Hitoshi MINAKUCHI, Tsuyoshi ITO, Katsuyuki KAWABATA, Kenji HASHIZUME
  • Patent number: 10340413
    Abstract: A semiconductor light emitting element includes a substrate and a semiconductor structure. The substrate has a first main surface, a second main surface and side surfaces. The side surfaces form a first altered area in which voids are positioned in a first imaginary line and a second imaginary line different from the first imaginary line in the thickness direction of the substrate. The semiconductor structure is provided on or above the first main surface of the substrate.
    Type: Grant
    Filed: January 19, 2017
    Date of Patent: July 2, 2019
    Assignee: NICHIA CORPORATION
    Inventors: Hitoshi Minakuchi, Kenichi Matsui
  • Publication number: 20170133551
    Abstract: A semiconductor light emitting element includes a substrate and a semiconductor structure. The substrate has a first main surface, a second main surface and side surfaces. The side surfaces form a first altered area in which voids are positioned in a first imaginary line and a second imaginary line different from the first imaginary line in the thickness direction of the substrate. The semiconductor structure is provided on or above the first main surface of the substrate.
    Type: Application
    Filed: January 19, 2017
    Publication date: May 11, 2017
    Applicant: NICHIA CORPORATION
    Inventors: Hitoshi MINAKUCHI, Kenichi MATSUI
  • Patent number: 9583674
    Abstract: A method for producing a semiconductor light emitting element includes a wafer preparation step, a first irradiation step, a second irradiation step, and a wafer division step. The wafer includes a semiconductor structure on a first main surface of a substrate. In the first irradiation step, a first light-condensing position in the thickness direction of the substrate is irradiated with a first laser beam from a second main surface of the substrate to form an altered area. The second main surface is opposite to the first main surface. In the second irradiation step, a second light-condensing position is irradiated with a second laser beam. The second light-condensing position is located at a position in the altered area different from the first light-condensing position. In the wafer division step, the wafer is divided into individual light emitting elements.
    Type: Grant
    Filed: June 18, 2015
    Date of Patent: February 28, 2017
    Assignee: NICHIA CORPORATION
    Inventors: Hitoshi Minakuchi, Kenichi Matsui
  • Publication number: 20150372188
    Abstract: A method for producing a semiconductor light emitting element includes a wafer preparation step, a first irradiation step, a second irradiation step, and a wafer division step. The wafer includes a semiconductor structure on a first main surface of a substrate. In the first irradiation step, a first light-condensing position in the thickness direction of the substrate is irradiated with a first laser beam from a second main surface of the substrate to form an altered area. The second main surface is opposite to the first main surface. In the second irradiation step, a second light-condensing position is irradiated with a second laser beam. The second light-condensing position is located at a position in the altered area different from the first light-condensing position. In the wafer division step, the wafer is divided into individual light emitting elements.
    Type: Application
    Filed: June 18, 2015
    Publication date: December 24, 2015
    Applicant: NICHIA CORPORATION
    Inventors: Hitoshi MINAKUCHI, Kenichi MATSUI