Abstract: A fluid discharge device includes a base portion defining a fluid flow passage and having an opening at a downstream end of the fluid flow passage, and a grill portion disposed to adjust a flow direction of the fluid blown from the opening. The grill portion includes a flow passage forming body defining a main flow passage and an auxiliary flow passage. In the flow passage forming body, the auxiliary flow passage surrounds the main flow passage and the auxiliary flow discharged from the auxiliary flow passage flows outside of the main flow discharged from the main flow passage. The flow passage forming body is configured such that a direction of the auxiliary flow discharged from the auxiliary flow passage corresponds to the direction of the main flow discharged from the main flow passage, when the flow direction of the fluid blown out of the opening is adjusted.

Abstract: A blowing device includes a passage member and a passage switching device. The passage member is inserted into an air passage configured to blow a main air into the vehicle cabin. The passage member is configured to blow an added-value air. The passage member includes, in the air passage, a passage opening portion through which the added-value air is blown toward a passenger separately from the main air. The passage member defines a hole portion and the passage switching device is a damper or a rotary door. The damper or the rotary door closes the hole portion to allow the added-value air to flow out through the passage opening portion and fluidly connects the hole portion to the air passage to allow the main air to flow out through both the passage opening portion and a region of the air passage other than the passage opening portion.

Abstract: A fluid discharge device includes a base portion defining a fluid flow passage and having an opening at a downstream end of the fluid flow passage, and a grill portion disposed to adjust a flow direction of the fluid blown from the opening. The grill portion includes a flow passage forming body defining a main flow passage and an auxiliary flow passage. In the flow passage forming body, the auxiliary flow passage surrounds the main flow passage and the auxiliary flow discharged from the auxiliary flow passage flows outside of the main flow discharged from the main flow passage. The flow passage forming body is configured such that a direction of the auxiliary flow discharged from the auxiliary flow passage corresponds to the direction of the main flow discharged from the main flow passage, when the flow direction of the fluid blown out of the opening is adjusted.

Abstract: A fluid discharge device is for discharging a fluid includes a duct defining a fluid flow passage and having an opening at a downstream end of the fluid flow passage. The fluid discharge device includes a grill portion disposed in the fluid flow passage to adjust a flow direction of the fluid blown from the opening. The grill portion includes at least an adjustment fin rotatably arranged in the fluid flow passage, and is provided with an auxiliary flow passage that guides a part of the fluid flowing through the fluid flow passage to the opening as an auxiliary flow. The auxiliary flow passage is configured together with the adjustment fin to adjust a flow direction of the auxiliary flow discharged from the auxiliary flow passage to be aligned with the flow direction of the fluid flowing through the fluid flow passage.

Abstract: A humidifying device includes a casing that defines a first air passage that guides air to an adsorbent module accommodation portion accommodating an adsorbent module including an adsorbent, and a second air passage through which the air flowing out of the adsorbent module accommodation portion flows. The humidifying device includes a peltier device that has a heat absorbing side and a heat generating side generating heat due to heat transfer from the heat absorbing side. The peltier device is housed in the casing such that the heat generating side is located in the first air passage and the heat absorbing side is located in the second air passage.

Abstract: A humidifying device for a vehicle has a humidity detection part, a blower, a non-water-supply humidifier, and a controller. The humidity detection part detects a humidity in a vehicle compartment. The blower draws, as an intake air, an inside air in the vehicle compartment and an outside air outside the vehicle compartment at a specified ratio and blows the intake air toward the vehicle compartment. The non-water-supply humidifier collects water included in the inside air and supplies a humidified air, which is humidified using the water, toward a specified area in the vehicle compartment. The controller sets the specified ratio between the inside air and the outside air and controls an operation of the non-water-supply humidifier. The controller controls the blower to draw at least the inside air, when the non-water-supply humidifier is operated, and when a humidity in the vehicle compartment is lower than a specified humidity.

Abstract: A humidifying device for a vehicle has a humidity detection part, a blower, a non-water-supply humidifier, and a controller. The humidity detection part detects a humidity in a vehicle compartment. The blower draws, as an intake air, an inside air in the vehicle compartment and an outside air outside the vehicle compartment at a specified ratio and blows the intake air toward the vehicle compartment. The non-water-supply humidifier collects water included in the inside air and supplies a humidified air, which is humidified using the water, toward a specified area in the vehicle compartment. The controller sets the specified ratio between the inside air and the outside air and controls an operation of the non-water-supply humidifier. The controller controls the blower to draw at least the inside air, when the non-water-supply humidifier is operated, and when a humidity in the vehicle compartment is lower than a specified humidity.

Abstract: Aiming at realizing high breakdown voltage and low ON resistance of a semiconductor device having the super-junction structure, the semiconductor device of the present invention has a semiconductor substrate having an element forming region having a gate electrode formed therein, and a periphery region formed around the element forming region, and having an field oxide film formed therein; and a parallel p-n layer having n-type drift regions and p-type column regions alternately arranged therein, formed along the main surface of the semiconductor substrate, as being distributed over the element forming region and a part of the periphery region, wherein the periphery region has no column region formed beneath the end portion on the element forming region side of the field oxide film and has p-type column regions as at least one column region formed under the field oxide film.

Abstract: A conventional power MOSFET structure is difficult to improve a breakdown voltage of an element even using a super-junction structure. A power MOSFET according to an embodiment of the invention is a semiconductor device of a super-junction structure, including: a gate electrode filled in a trench formed on a semiconductor substrate; a gate wiring metal forming a surface layer; and a gate electrode plug connecting between the gate electrode and the gate wiring metal. Thus, a polysilicon layer necessary for the conventional typical power MOSFET is unnecessary. That is, column regions of an element active portion and an outer peripheral portion can be formed under the same conditions. As a result, it is possible to improve an element breakdown voltage as compared with the conventional one.

Abstract: A semiconductor device includes a first conductivity type semiconductor substrate. A first conductivity type drift layer is formed on a surface of the first conductivity type semiconductor substrate, and a second conductivity type base region is produced in the first conductivity type drift layer. The second conductivity type base region has a trench formed in a surface thereof. A trench-stuffed layer is formed by stuffing the trench with a suitable material, and a second conductivity type column region formed in the first conductivity type drift layer and sited beneath the trench-stuffed layer.

Abstract: A semiconductor apparatus with a superjunction structure includes a gate electrode which fills a trench that is formed in an epitaxial layer, and a column region which is surrounded by the gate electrode in a plane view. A photomask for forming the column region is elaborated. The photomask has a compensation pattern that compensates a deformation of a photo resist pattern caused by photo interference and a deformation of the ion implantation region diffused by heat treatment. Therefore extending direction of the gate electrode and the outer edge of the column region are substantially parallel.

Abstract: The present invention provides a super-junction semiconductor element having a high voltage resistance and a low resistivity, while being successfully reduced in the size thereof, which comprises a semiconductor substrate 3; a pair of electrodes 1, 2 provided respectively on a top surface 12 and a back surface 13 of the semiconductor substrate 3; a parallel pn layer provided between the top surface 12 and the back surface 13 of said semiconductor substrate, having n-type semiconductor layers 4 allowing current flow under the ON state but being depleted under the OFF state, and p-type semiconductor layers 5 alternately arranged therein; and an insulating film 6 formed so as to surround the parallel pn layer; wherein the insulating film 6 is formed at a predetermined position.

Abstract: A thermal management system for a vehicle includes a switching power supply device, an electronic member configured to output an electrical power adjusted by the switching power supply device, and a control device configured to control operation of the switching power supply device. When the control device receives a heating request from at least one of devices that include a drive device used for driving the vehicle and an air conditioning device used for performing an air conditioning in a vehicle compartment, the control device causes the switching power supply device to be operated in a heat increasing operation in which heat generated from the electronic member is increased more than that in a general operation state, and supplies the generated heat to the at least one of the drive device and the air conditioning device.

Abstract: A semiconductor device comprises a drift region of a first conduction type, a base region of a second conduction type, a source region of the first conduction type, a contact hole, a column region of the second conduction type, a plug and wiring. The drift region formed on a semiconductor substrate of the first conduction type. The base region of a second is formed in a prescribed region of the surface of the drift region. The source region is formed in a prescribed region of the surface of the base region. The contact hole extends from the source region surface side to the base region. The column region is formed in the drift region below the contact hole. The plug comprises a first conductive material and fills the contact hole. The wiring comprises a second conductive material and is electrically connected to the plug.

Abstract: A conventional power MOSFET structure is difficult to improve a breakdown voltage of an element even using a super-junction structure. A power MOSFET according to an embodiment of the invention is a semiconductor device of a super-junction structure, including: a gate electrode filled in a trench formed on a semiconductor substrate; a gate wiring metal forming a surface layer; and a gate electrode plug connecting between the gate electrode and the gate wiring metal. Thus, a polysilicon layer necessary for the conventional typical power MOSFET is unnecessary. That is, column regions of an element active portion and an outer peripheral portion can be formed under the same conditions. As a result, it is possible to improve an element breakdown voltage as compared with the conventional one.

Abstract: A semiconductor device has a semiconductor substrate, and a parallel p-n layer provided between the main surface and the back surface of the semiconductor substrate, and first-conductivity-type drift region and second-conductivity-type partition regions alternately arranged therein, wherein in the parallel p-n layer, the second-conductivity-type partition regions are periodically formed conforming to a basic periodicity specified by a predetermined distance, and SA/S (where, SA is a sectional area per a single second-conductivity-type partition region as viewed in a plane parallel with the main surface, and S is a sectional area of a unit structural region, periodically formed as containing one of the second-conductivity-type partition regions, as viewed in a plane parallel with the main surface) in an element-forming region allowing current to flow therethrough is smaller than SA/S in at least a portion of a periphery region surrounding the element-forming region.

Abstract: A semiconductor apparatus with a superjunction structure includes a gate electrode which fills a trench that is formed in an epitaxial layer, and a column region which is surrounded by the gate electrode in a plane view. A photomask for forming the column region is elaborated. The photomask has a compensation pattern that compensates a deformation of a photo resist pattern caused by photo interference and a deformation of the ion implantation region diffused by heat treatment. Therefore extending direction of the gate electrode and the outer edge of the column region are substantially parallel.

Abstract: Aiming at realizing high breakdown voltage and low ON resistance of a semiconductor device having the super-junction structure, the semiconductor device of the present invention has a semiconductor substrate having an element forming region having a gate electrode formed therein, and a periphery region formed around the element forming region, and having an field oxide film formed therein; and a parallel p-n layer having n-type drift regions and p-type column regions alternately arranged therein, formed along the main surface of the semiconductor substrate, as being distributed over the element forming region and a part of the periphery region, wherein the periphery region has no column region formed beneath the end portion on the element forming region side of the field oxide film and has p-type column regions as at least one column region formed under the field oxide film.

Abstract: A semiconductor device 100 includes an element-forming region having gate electrode 108 formed therein, and a circumferential region formed in the outer circumference of the element-forming region and having an element-isolating region 118 formed therein. On the main surface of the semiconductor substrate 101, there is formed a parallel pn layer having an N-type drift region 104 and P-type column regions 106 alternately arranged therein. In the circumferential region, there is formed a field electrode 120, but the field electrode 120 is not formed on the P-type column regions 106. The P-type column regions 106 in the circumferential region are formed with a depth larger than or equal to that of the P-type column regions 106 in the element-forming region.

Abstract: A semiconductor device includes a first conductivity type semiconductor substrate. A first conductivity type drift layer is formed on a surface of the first conductivity type semiconductor substrate, and a second conductivity type base region is produced in the first conductivity type drift layer. The second conductivity type base region has a trench formed in a surface thereof. A trench-stuffed layer is formed by stuffing the trench with a suitable material, and a second conductivity type column region formed in the first conductivity type drift layer and sited beneath the trench-stuffed layer.