Abstract: A contact object detection apparatus includes an on-road static object detector, a sonar sensor, a position estimator, a corrector, and a contact object determination unit. The on-road static object detector detects an on-road static object from an image of an environment behind a vehicle to calculate a position of the object. When the object is no longer detectable, the position estimator estimates a current position of the object based on the last position detected by the on-road static object detector, traveling speed data, and steering angle data, to calculate an angle between a center axis of the sonar sensor and the estimated current position. The corrector corrects a decrease in a sensor output value of the sonar sensor based on the calculated angle. The contact object determination unit determines whether the object has a possibility of contact with the vehicle, based on the corrected sensor output value.

Abstract: A rectifying device includes an air flow generator. The air flow generator is disposed at an exterior member of a vehicle. The exterior member is adjacent to a detector of a sensor that is disposed such that at least a portion of a detection range of the detector includes a rear region behind a plane in a traveling direction of the vehicle. The plane is parallel to a width direction and a vertical direction of the vehicle. The air flow generator is configured to generate an air flow that separates, from the detector of the sensor, travelling wind that accompanies travel of the vehicle. The air flow generator includes a plasma actuator that includes at least a pair of electrodes and a power source that is configured to apply an alternating current voltage to the electrodes.

Abstract: A vehicle includes a level difference detector and a running controller. The level difference detector is configured to detect a level difference. The running controller is configured to perform in parallel level-difference override suppression control to suppress erroneous start for override of the level difference and level-difference override support control to support override of the level difference.

Abstract: A rectifying device includes an air flow generator. The air flow generator is disposed at an exterior member of a vehicle. The exterior member is adjacent to a detector of a sensor that is disposed such that at least a portion of a detection range of the detector includes a rear region behind a plane in a traveling direction of the vehicle. The plane is parallel to a width direction and a vertical direction of the vehicle. The air flow generator is configured to generate an air flow that separates, from the detector of the sensor, travelling wind that accompanies travel of the vehicle. The air flow generator includes a plasma actuator that includes at least a pair of electrodes and a power source that is configured to apply an alternating current voltage to the electrodes.

Abstract: The invention aims to proliferate or establish undifferentiated pluripotent stem cells that retain their differentiation potency by culturing pluripotent stem cells in a medium free of a feeder cell, or a serum. The aim is attained by using a culture medium for pluripotent stem cells comprising the known ingredients, which is supplemented with an inhibitor of an adenylate cyclase activity.

Abstract: The invention aims to proliferate or establish undifferentiated pluripotent stem cells that retain their differentiation potency by culturing pluripotent stem cells in a medium free of a feeder cell, or a serum. The aim is attained by using a culture medium for pluripotent stem cells comprising the known ingredients, which is supplemented with an inhibitor of an adenylate cyclase activity.

Abstract: A method of expression DNA in a cell comprises, in a cell that expresses a replication VpA factor, transfecting the cell with a vector, wherein (i) the vector contains a DNA, or is adapted to receive a DNA, in operative combination with a promoter for expression of the DNA; and (ii) extrachromosomal replication of the vector is dependent upon presence within the cell of the replication factor. Stable El maintenance of the vector and expression of the DNA is thereby achieved. Vectors for expression of DNA are provided as are assays for the effect of expression of DNAs in cells, the DNAs being H expressed from the vectors.

Abstract: A pinch device for detecting a biomedical signal which pinches a measuring site of a living body in order to detect a biomedical signal, includes a pair of body members which are opposed to each other, said body members being rotatably coupled to each other via a shaft portion, a movable member mounted to a tip end of one of said paired body members so as to be rotatable, and said movable member having a contact face opposed to another contact face which is formed at a tip end of another one of said paired body members, and a spring member urging said contact face of said movable member and said other contact face of said body member which is opposed to said movable member, in an approaching direction.

Abstract: A process for manufacturing a light valve device comprises forming a transparent insulating thin film layer on a surface of a semiconductor substrate, and forming a single crystal semiconductor thin film on a surface of the transparent insulating thin film layer. A portion of the single crystal semiconductor thin film is then removed and at least one pixel electrode is formed on the transparent insulating thin film layer at a region where the single crystal semiconductor thin film has been removed. A driving unit is then formed in the single crystal semiconductor thin film. Thereafter, a carrier substrate is laminated using an adhesive on the surface of the semiconductor substrate at a region corresponding to the pixel electrode and the driving unit. The semiconductor substrate is then removed to expose a surface of the transparent insulating thin film layer and through-holes and a metal film are formed on the exposed surface thereof.

Abstract: A process for manufacturing a semiconductor device comprises forming an SOI substrate by depositing an insulating film of silicon dioxide on a surface of a temporary silicon substrate, thermally bonding a semiconductor substrate of single crystal silicon on a surface of the insulating film, and polishing the semiconductor substrate to form a single crystal semiconductor thin film. A semiconductor integrated circuit is then formed in the single crystal semiconductor thin film. Thereafter, a support substrate is fixedly adhered in face-to-face relation to a surface of the semiconductor integrated circuit opposite to the temporary substrate. The temporary substrate is then removed to expose a surface of the insulating film. The exposed surface of the insulating film is then subjected to a treatment including at least forming an electrode.

Abstract: A semiconductor wafer is comprised of a transparent layer interposed between a thin silicon layer and a thick silicon layer. Silicon islands are formed from the thin silicon layer on the transparent layer. Device elements are formed in the silicon islands. Thereafter, the thick silicon layer which is a support layer is etched away to form a transparent region on the wafer. The wafer is constructed to avoid elimination or destruction of the transparent layer during the course of formation of the silicon islands and during the course of etching of the rear thick silicon plate. The transparent layer is comprised of a silicon nitride film or a silicon carbide film. Alternatively, the transparent layer is comprised of a silicon oxide film covered by a silicon nitride film or a silicon carbide film on one or both of the upper and lower faces of the silicon oxide film.

Abstract: Herein disclosed are a semiconductor device having a double-side wiring structure, in which a single crystal semiconductor thin film formed integrally with transistor elements is laminated on an insulating thin film and is formed with through holes and in which the insulating thin film is formed on its back with electrodes and a shielding film, and a light valve device using the semiconductor device. Over the single crystal semiconductor thin film, there are formed switching elements of transistors, pixel electrodes connected electrically with the switching elements, and drive circuits for scanning and driving the switching elements. Also disclosed is a miniature highly dense light valve device.

Abstract: A semiconductor device having a double-side wiring structure, in which a single crystal semiconductor thin film is formed integrally with transistor elements and is laminated on an insulating thin film. The single crystal semiconductor thin film is formed with through-holes and the insulating thin film is formed on its back side with electrodes and a shielding film. A light valve device using the semiconductor device is also disclosed. Over the single crystal semiconductor thin film, there are formed switching elements of transistors, pixel electrodes connected electrically with the switching elements, and drive circuits for scanning and driving the switching elements. Also disclosed is a miniature highly dense light valve device. In this light valve device, an electrooptical substance is arranged between a multi-layer substrate.

Abstract: A semiconductor device having a double-side wiring structure, in which a single crystal semiconductor thin film is formed integrally with transistor elements and is laminated on an insulating thin film. The single crystal semiconductor thin film is formed with through-holes and the insulating thin film is formed on its back side with electrodes and a shielding film. A light valve device using the semiconductor device is also disclosed. Over the single crystal semiconductor thin film, there are formed switching elements of transistors, pixel electrodes connected electrically with the switching elements, and drive circuits for scanning and driving the switching elements. Also disclosed is a miniature highly dense light valve device. In this light valve device, an electrooptical substance is arranged between a multi-layer substrate.

Abstract: A transfer apparatus for transferring a sheet-like medium has a vibrational element or elements which vibrate under control of electrical energy to move the sheet-like medium along a transfer medium. The vibrational element has a tubular hexagonal body with piezoelectric elements on its faces other then the upper and lower face. The lower face is fixed and the upper face has a projection in the shape of a ball which engages the bottom surface of the sheet-like medium during vibration of the vibrational element.

Abstract: Aqueous titanium tetrachloride solution and aqueous zirconium nitrate solution of components except zirconium, for forming lead zirconate-tinatate in which part of the lead is substituted for any of the lanthanide elements are mixed, and the mixture is hydrolyzed to form sol. This sol is cleaned, dried, and calcined at 1100.degree. C. to form modified powder. The compounds of the remaining component of lead zirconate-titanate, such as TiO.sub.2 powder, PbO powder and Sm.sub.2 O.sub.3 powder, are mixed with the modified powder, and the resultant mixture is calcined at 750.degree. C. for 1 hour to produce the lead zirconate-titanate.

Abstract: A pilot injection system according to the present invention, which is used in a fuel injection pump, has a casing attached to the pump. The casing connects internally with a pump chamber of the injection pump. A partition wall is fixed in the casing, whereby the pump chamber is divided from the inside of the casing. A movable wall, which is movably located in the casing, divides the inside space of the casing between a fuel-spill chamber and a holding chamber. The partition wall is formed with a valve hole, which connects the pump chamber and the spill chamber. The valve hole has a seat surface which faces the pump chamber. A valve plug, which is located in the pump chamber, can be seated on the seat surface. The valve plug is connected to the movable wall by means of a coupling rod, which extends through the valve hole. Located in the spill chamber is a return spring which urges the movable wall in a direction such that the valve plug closes the valve hole.

Abstract: Anti-reducing semiconducting porcelain having a positive temperature coefficient of resistance comprises a barium titanate composition, and a flux containing 0.14 to 2.88 parts by weight of TiO.sub.2 0.1 to 1.6 parts by weight of Al.sub.2 O.sub.3 and 0.1 to 1.6 parts by weight of SiO.sub.2 per 100 parts by weight of the barium titanate composition. It has a high positive temperature coefficient of resistance which does not show any appreciable change in the presence of a reducing atmosphere, such as hydrogen gas or gasified gasoline. It need not be isolated from a reducing atmosphere by a plastic or metallic enclosure, but can be exposed thereto. The flux may further contain a zinc, potassium or lithium compound.

Abstract: A positive ceramic semiconductor device having positive temperature coefficient of resistance comprises a pair of electrodes provided on a ceramic semiconductor substrate. One of the paired electrodes which is to serve as the positive pole is basically constituted by at least an electrically conductive layer of silver-palladium series containing silver and palladium at a predetermined ratio. For preventing a localized current concentration from occurring in the current conducting state, improvement is made as the structure of the positive pole electrode ormed of the electrically conductive material of silver-palladium series and/or the structure of the negative pole electrode. Silver-migration phenomenon on the positive ceramic semiconductor substrate as well as degradation of the mechanical strength thereof is positively prevented.

Abstract: A ceramic heater body is formed in a plate shape, and has electrode attaching portions at both ends of the heater body. A plurality of openings are formed in the electrode attaching portion, and a metallized layer is formed on the inner peripheral surface of each of the openings. Electrodes having a plurality of wires are connected to the electrode attaching portions, for supplying power to the heater body. The metal wires are inserted into the openings formed having the metallized layers on the inner peripheral surfaces, and are secured by brazing to the metallized layers. The diameter of the metal wire is set to 0.5 to 3 mm, and the metal wires are buried in the openings, at a depth of 1 to 5 mm.