Abstract: A semiconductor device includes: a semiconductor substrate, the semiconductor substrate comprising; an n type drift layer, a p type body layer on an upper surface side of the drift layer, and a high impurity n layer on a lower surface side of the drift layer. The high impurity n layer includes hydrogen ion donors as a dopant, and has a higher density of n type impurities than the drift layer. A lifetime control region including crystal defects as a lifetime killer is formed in the high impurity n layer and a part of the drift layer. A donor peak position is adjacent or identical to a defect peak position, at which a crystal defect density is highest in the lifetime control region in the depth direction of the semiconductor substrate. The crystal defect density in the defect peak position of the lifetime control region is 1×1012 atoms/cm3 or more.