Abstract: A sorbent breather filter for an electronic device such as a hard disk drive (HDD) is configured with a first chamber for housing a first sorbent and environmentally coupled with an external environment via at least a first orifice and a second orifice, a corresponding replaceable first sorbent such as zeolite or silica gel beads in the first chamber, a second chamber adjacent to the first chamber for housing a second sorbent, and a corresponding second sorbent such as carbon beads in the second chamber. The first orifice is a through-hole such that the first sorbent can be loaded into the first chamber therethrough, and the second orifice is a slitted or grated hole such that the first sorbent cannot move from the first chamber to the external environment through the second orifice while loading sorbent into the first chamber through an HDD first cover breather hole.

Abstract: Provided is polycrystalline diamond having a diamond single phase as basic composition, in which the polycrystalline diamond includes a plurality of crystal grains and contains boron, hydrogen, oxygen, and the remainder including carbon and trace impurities; the boron is dispersed in the crystal grains at an atomic level, and greater than or equal to 90 atomic % of the boron is present in an isolated substitutional type; hydrogen and oxygen are present in an isolated substitutional type or an interstitial type in the crystal grains; each of the crystal grains has a grain size of less than or equal to 500 nm; and the polycrystalline diamond has a surface covered with a protective film.

Abstract: Provided is a synthetic single crystal diamond containing conjugants each composed of one vacancy and one boron atom, wherein the concentration of boron atoms based on atom numbers is 0.1 ppm or more and 100 ppm or less.

Abstract: A diamond polycrystal includes diamond grains, the diamond polycrystal including a cubic diamond and a 6H type hexagonal diamond, wherein the cubic diamond and the 6H type hexagonal diamond exist in the same or different diamond grains, and a ratio Ab1/Ab2 is more than or equal to 0.4 and less than or equal to 1, Ab1 representing a maximum value of absorption in a range of more than or equal to 1200 cm?1 and less than or equal to 1300 cm?1 in an infrared absorption spectrum, Ab2 representing a maximum value of absorption in a range of more than or equal to 1900 cm?1 and less than or equal to 2100 cm?1.

Abstract: A diamond polycrystal is a diamond polycrystal basically composed of a diamond single phase, wherein the diamond polycrystal is composed of a plurality of diamond grains having an average grain size of less than or equal to 30 nm, and the diamond polycrystal has a carbon dangling bond density of more than or equal to 10 ppm.

Abstract: A synthetic single crystal diamond containing 100 ppm or more and 1500 ppm or less of nitrogen atoms, in which the synthetic single crystal diamond contains aggregates each composed of one vacancy and two to four nitrogen atoms present adjacent to the vacancy, a ratio b/a of a length b of a short diagonal line to a length a of a long diagonal line of diagonal lines of a Knoop indentation in a <110> direction in a {001} plane of the synthetic single crystal diamond is 0.08 or less, and the Knoop indentation is formed by measuring Knoop hardness in the <100> direction in the {001} plane of the synthetic single crystal diamond according to JIS Z 2251: 2009 under conditions of a temperature of 23° C.±5° C. and a test load of 4.9 N.

Abstract: A synthetic single crystal diamond containing nitrogen atoms at a concentration of 100 ppm or more and 1500 ppm or less based on atom numbers, in which the synthetic single crystal diamond contains aggregates each composed of one vacancy and three substitutional nitrogen atoms present adjacent to the vacancy, and a Raman shift ?? cm?1 of a peak in a first-order Raman scattering spectrum of the synthetic single crystal diamond and a Raman shift ? cm?1 of a peak in a first-order Raman scattering spectrum of a synthetic type IIa single crystal diamond containing nitrogen atoms at a concentration of 1 ppm or less based on atom numbers show a relationship of the following formula 1, ?????0??Formula 1.

Abstract: Provided is a synthetic single crystal diamond containing nitrogen atoms at a concentration of more than 600 ppm and 1500 ppm or less. The Raman shift ?? (cm?1) of a peak in a primary Raman scattering spectrum of the synthetic single crystal diamond and the Raman shift ? (cm?1) of a peak in a primary Raman scattering spectrum of a synthetic type IIa single crystal diamond containing nitrogen atoms at a content of 1 ppm or less satisfy the following expression (1): ??????0.10??(1).

Abstract: Provided is a synthetic single-crystal diamond containing nitrogen. In an X-ray absorption fine structure thereof, a ratio I405/I412 between an intensity I405 of a peak which appears at an energy of 405±1 eV and has a full width at ¾ maximum of 3 eV or more and an intensity I412 of a peak which appears at an energy of 412±2 eV is less than 1.

Abstract: A polycrystalline cubic boron nitride includes a cubic boron nitride particle group. The ratio of a second length to a first length is 0.99 or less. Here, each of the first length and the second length is a value measured on a surface of the polycrystalline cubic boron nitride with an indentation formed by a Knoop hardness test under conditions specified in ISO4545-1 and ISO4545-4. The second length represents the length of the longer diagonal of the indentation. The first length represents the sum of the second length and the length of the streaky indentation.

Abstract: A method of producing a boron nitride polycrystal includes: a first step of obtaining a thermally treated powder by thermally treating a powder of a high pressure phase boron nitride at more than or equal to 1300° C.; and a second step of obtaining a boron nitride polycrystal by sintering the thermally treated powder under a condition of 8 to 20 GPa and 1200 to 2300° C.

Abstract: In a diamond polycrystal, a value of a ratio (d?/d) of d? to d is less than or equal to 0.98 in a Vickers hardness test performed under a condition defined in JIS Z 2244:2009, where the d represents a length of a diagonal line of a first Vickers indentation formed in a surface of the diamond polycrystal when a Vickers indenter with a test load of 4.9 N is pressed onto the surface of the diamond polycrystal, and the d? represents a length of a diagonal line of a second Vickers indentation remaining in the surface of the diamond polycrystal after releasing the test load.

Abstract: Provided is polycrystalline diamond having a diamond single phase as basic composition, in which the polycrystalline diamond includes a plurality of crystal grains and contains boron, at least either of nitrogen and silicon, and a remainder including carbon and trace impurities; the boron is dispersed in the crystal grains at an atomic level, and greater than or equal to 90 atomic % of the boron is present in an isolated substitutional type; the nitrogen and the silicon are present in an isolated substitutional type or an interstitial type in the crystal grains; each of the crystal grains has a grain size of less than or equal to 500 nm; and the polycrystalline diamond has a surface covered with a protective film.

Abstract: In a diamond polycrystal, a value of a ratio (a?/a) of a? to a is less than or equal to 0.99 in a Knoop hardness test performed under a condition defined in JIS Z 2251:2009, where the a represents a length of a longer diagonal line of a first Knoop indentation formed in a surface of the diamond polycrystal when a Knoop indenter with a test load of 4.9 N is pressed onto the surface of the diamond polycrystal, and the a? represents a length of a longer diagonal line of a second Knoop indentation remaining in the surface of the diamond polycrystal after releasing the test load.

Abstract: Provided is a method for producing a polycrystalline diamond body, the method including a first step of heat-treating a powder of high-pressure-phase carbon at higher than or equal to 1300° C. to obtain a heat-treated carbon powder, and a second step of sintering the heat-treated carbon powder under conditions of greater than or equal to 12 GPa and less than or equal to 25 GPa and higher than or equal to 1200° C. and lower than or equal to 2300° C. to obtain a polycrystalline diamond body.

Abstract: A method of manufacturing a diamond by a vapor phase synthesis method includes: preparing a substrate including a diamond seed crystal; forming a light absorbing layer lower in optical transparency than the substrate by performing ion implantation into the substrate, the light absorbing layer being formed at a predetermined depth from a main surface of the substrate; growing a diamond layer on the main surface of the substrate by the vapor phase synthesis method; and separating the diamond layer from the substrate by applying light from a main surface of at least one of the diamond layer and the substrate to allow the light absorbing layer to absorb the light and cause the light absorbing layer to be broken up.

Abstract: Provided are a diamond composite body capable of shortening a separation time for separating a substrate and a diamond layer, the substrate, and a method for manufacturing a diamond, as well as a diamond obtained from the diamond composite body and a tool including the diamond. The diamond composite body includes a substrate including a diamond seed crystal and having grooves in a main surface, a diamond layer formed on the main surface of the substrate, and a non-diamond layer formed on a substrate side at a constant depth from an interface between the substrate and the diamond layer.

Abstract: A wear-resistant tool includes composite polycrystalline diamond as a core, the composite polycrystalline diamond being composed of polycrystalline diamond in which particulate diamond is directly bonded and non diamond carbon. The polycrystalline diamond in the composite polycrystalline diamond is three-dimensionally continuous in composite polycrystal and primary particles have an average particle size from 10 to 500 nm.

Abstract: An indenter is made of polycrystalline diamond and has a tip having a spherical surface with a radius of 10 to 2000 ?m.

Abstract: A diamond die includes a diamond provided with a hole for drawing a wire material, the diamond being a CVD single-crystal diamond, an axis of the hole being inclined relative to a normal direction of a crystal plane of the diamond.