Patents by Inventor Hitsohi Sato

Hitsohi Sato has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Metalorganic chemical vapor deposition (MOCVD) growth of high performance non-polar III-nitride optical devices
    Patent number: 8178373
    Abstract: A method of device growth and p-contact processing that produces improved performance for non-polar III-nitride light emitting diodes and laser diodes. Key components using a low defect density substrate or template, thick quantum wells, a low temperature p-type III-nitride growth technique, and a transparent conducting oxide for the electrodes.
    Type: Grant
    Filed: October 28, 2010
    Date of Patent: May 15, 2012
    Assignees: The Regents of the University of California, Japan Science and Technology Agency
    Inventors: Mathew C. Schmidt, Kwang Choong Kim, Hitsohi Sato, Steven P. DenBaars, James S. Speck, Shuji Nakamura
  • METALORGANIC CHEMICAL VAPOR DEPOSITION (MOCVD) GROWTH OF HIGH PERFORMANCE NON-POLAR III-NITRIDE OPTICAL DEVICES
    Publication number: 20110037052
    Abstract: A method of device growth and p-contact processing that produces improved performance for non-polar III-nitride light emitting diodes and laser diodes. Key components using a low defect density substrate or template, thick quantum wells, a low temperature p-type III-nitride growth technique, and a transparent conducting oxide for the electrodes.
    Type: Application
    Filed: October 28, 2010
    Publication date: February 17, 2011
    Applicants: THE REGENTS OF THE UNIVERSITY OF CALIFORNIA, JAPAN SCIENCE AND TECHNOLOGY AGENCY
    Inventors: Mathew C. Schmidt, Kwang Choong Kim, Hitsohi Sato, Steven P. DenBaars, James S. Speck, Shuji Nakamura