Abstract: A high side gate driver, a switching chip, and a power device, which respectively include a protection device, are provided. The high side gate driver includes a first terminal configured to receive a first low level driving power supply that is provided to turn off the high side normally-on switch; a first switching device connected to the first terminal; and a protection device connected in series between the first switching device and a gate of the high side normally-on switch, the protection device configured to absorb a majority of a voltage applied to a gate of the high side normally-on switch. The power device includes the high side gate driver. In addition, the switching chip includes a high side normally-on switch, an additional normally-on switch, and a low side normally-on switch, which have a same structure.

Abstract: A logic device includes first and second logic blocks and a connection block. Each of the first and second logic blocks configured to perform at least one function, the first logic blocks connected to first connection lines and the second logic blocks connected to second connection lines. The connection block electrically connected to the first and second logic blocks via the first connection lines and the second connection lines, respectively. The connection block including connection cells configured to select one of multiple connection configurations between the first connection lines and the second connection lines based on a desired function.

Abstract: A variable resistance memory device includes a variable resistance memory cell, a switch that selectively passes a write voltage to an input terminal of the variable resistance memory cell, and a trigger circuit that controls the switch to cut off the write voltage from the input terminal upon determining that the variable resistance memory cell is programmed to a target state by detecting voltage fluctuation of the one side of variable resistance memory cell.

Abstract: Image sensors and methods of operating the same. An image sensor includes a pixel array including a plurality of pixels. Each of the plurality of pixels includes a photo sensor, the voltage-current characteristics of which vary according to energy of incident light, and that generates a sense current determined by the energy of the incident light; a reset unit that is activated to generate a reference current, according to a reset signal for resetting at least one of the plurality of pixels; and a conversion unit that converts the sense current and the reference current into a sense voltage and a reference voltage, respectively.

Abstract: A power module including a power device and a periphery circuit configured to suppress a leakage current in the power device. The periphery circuit includes a leakage current detection circuit configured to detect a leakage current from the power device and control operation of the power device based on a result of the detection. The leakage current detection circuit including an input terminal connected to the power device, a plurality of NMOS transistors, a plurality of PMOS transistors connected to the plurality of NMOS transistors, and a comparator.

Abstract: A microprocessor chip includes a plurality of processors; at least one first optical input/output unit configured to receive optical signals from an external device and transmit optical signals to the external device; and an optical system bus that is connected between the plurality of processors and the at least one first optical input/output unit.

Abstract: According to example embodiments, a graphene device includes a first electrode, a first insulation layer on the first electrode, an information storage layer on the first insulation layer, a second insulation layer on the information storage layer, a graphene layer on the second insulation layer, a third insulation layer on a first region of the graphene layer, a second electrode on the third insulation layer, and a third electrode on a second region of the graphene layer.

Abstract: Image sensors and methods of operating the same. An image sensor includes a pixel array including a plurality of pixels. Each of the plurality of pixels includes a photo sensor, the voltage-current characteristics of which vary according to energy of incident light, and that generates a sense current determined by the energy of the incident light; a reset unit that is activated to generate a reference current, according to a reset signal for resetting at least one of the plurality of pixels; and a conversion unit that converts the sense current and the reference current into a sense voltage and a reference voltage, respectively.

Abstract: A logic device may include a first functional block, the first functional block including, a first storage block, a second storage block, and a first function controller. In a first operation time period, the first function controller may be configured to receive a first configuration selection signal and a first configuration command signal that instructs a first function be configured, select the first storage block as a configured storage block in the first operation time period based on the first configuration selection signal, and configure the first function in the first storage block based on the first configuration command signal.

Abstract: Provided are nonvolatile memory transistors and devices including the nonvolatile memory transistors. A nonvolatile memory transistor may include a channel element, a gate electrode corresponding to the channel element, a gate insulation layer between the channel element and the gate electrode, an ionic species moving layer between the gate insulation layer and the gate electrode, and a source and a drain separated from each other with respect to the channel element. A motion of an ionic species at the ionic species moving layer occurs according to a voltage applied to the gate electrode. A threshold voltage changes according to the motion of the ionic species. The nonvolatile memory transistor has a multi-level characteristic.

Abstract: A multi-valued logic device having an improved reliability includes a conversion unit configured to convert a multi level signal into a plurality of partial signals; and a plurality of nonvolatile memory devices configured to individually store the plurality of partial signals, wherein a number of bits of each of the plurality of partial signals individually stored in the plurality of nonvolatile memory devices is less than the number of bits of the multi level signal.

Abstract: A magnetic random access memory (MRAM), and methods of manufacturing and operating the MRAM, include a switching element and a storage node connected to the switching element, and a magnetic node configured to simultaneously store two opposite bits.

Abstract: A power device includes a switching device having a control terminal and an output terminal; and a driving circuit configured to provide a driving voltage to the control terminal such that a voltage between the control terminal and the output terminal remains less than or equal to a critical voltage. A rise time required for the driving voltage to reach a target level is determined according to current-voltage characteristics of the switching device. And, when the voltage between the control terminal and the output terminal exceeds the critical voltage, leakage current is generated between the control terminal and the output terminal.

Abstract: An air conditioner and a controlling method thereof are provided. The controlling method may include determining an initial operation temperature based on a received external input or setting, cooling or heating a room at the determined initial operation temperature for a preset initial operation time period, and thereafter increasing or decreasing the room temperature at a preset time interval.

Abstract: According to example embodiments, a logic device includes a first functional block configured to perform a first operation according to first operation information and a second operation according to second operation information, and a second functional block configured to perform a third operation according to the first operation information and a fourth operation according to the second operation information. The first functional block is configured to receive configuration information, to select one of the first operation information and the second operation information based on the configuration information, and to perform the first or second operation based on the selected first or second operation information.

Abstract: A logic device includes: a function block and a configuration block. The function block is configurable to perform operations associated with a plurality of operation modes. The configuration block is configured to configure the function block to perform an operation associated with any one of the plurality of operation modes. The logic device also includes a controller configured to control the configuration block so that the function block is configured to perform the operation.

Abstract: A semiconductor memory device is provided. The semiconductor memory device includes a memory cell array including a matrix of memory cells; a plurality of local bit lines divided into at least two local bit line groups arranged to be alternately connected with at least two global bit lines and coupled with the memory cells; a plurality of bit line selection drivers respectively connected to the local bit lines; an internal boosted voltage generator configured to generate at least two internal boosted voltages having different levels; and a power transmitter configured to respectively transmit the at least two internal boosted voltages to at least two bit line selection driver groups, into which the plurality of bit line selection drivers are classified according to arrangement of the local bit lines. Accordingly, repair efficiency can be increased and near-far compensation can be more correctly performed.

Abstract: A logic device includes first and second logic blocks and a connection block. Each of the first and second logic blocks configured to perform at least one function, the first logic blocks connected to first connection lines and the second logic blocks connected to second connection lines. The connection block electrically connected to the first and second logic blocks via the first connection lines and the second connection lines, respectively. The connection block including connection cells configured to select one of multiple connection configurations between the first connection lines and the second connection lines based on a desired function.

Abstract: A method of changing a parameter in a semiconductor device is provided. The method includes receiving and storing data in a storage region; and changing at least one between a DC characteristic and an AC timing characteristic of a parameter, used to access a non-volatile memory cell included in a memory core of the semiconductor device, according to the data stored in the storage.

Abstract: A memory device includes a graphene switching device having a source electrode, a drain electrode and a gate electrode. The graphene switching device includes a Schottky barrier formed between the drain electrode and a channel in a direction from the source electrode toward the drain electrode. The memory device need not include additional storage element.