Patents by Inventor Ho Q. Vu

Ho Q. Vu has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Method of making semiconductor MOSFET device by bombarding with radiation followed by beam-annealing
    Patent number: 4469527
    Abstract: A semiconductor substrate is formed by irradiating a semiconductor substrate with radioactive ray so as to generate lattice defects therein for making the entire substrate semi-insulating and then rendering only the surface of the thus irradiated substrate semiconductive, so that a semiconductor device is produced by using the substrate thus formed.
    Type: Grant
    Filed: December 1, 1981
    Date of Patent: September 4, 1984
    Assignee: Tokyo University
    Inventors: Takuo Sugano, Ho Q. Vu