Patents by Inventor Ho-Ryeong Lee
Ho-Ryeong Lee has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 11557616Abstract: An image sensing device includes a photoelectric conversion element, a floating diffusion (FD) region, and a transfer gate. The photoelectric conversion element is disposed in a substrate, and generates photocharges in response to incident light. The floating diffusion (FD) region is disposed over the photoelectric conversion element, and stores the photocharges generated by the photoelectric conversion element. The transfer gate transfer the photocharges generated by the photoelectric conversion element to the floating diffusion (FD) region in response to a transmission signal. The transfer gate includes a horizontal gate disposed over the photoelectric conversion element, and a vertical gate coupled to the horizontal gate. The vertical gate is positioned at a side of the photoelectric conversion element, and surrounds the photoelectric conversion element.Type: GrantFiled: November 4, 2019Date of Patent: January 17, 2023Assignee: SK hynix Inc.Inventors: Ho Ryeong Lee, Dong Hyun Woo
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Patent number: 11521999Abstract: An image sensing device includes a photoelectric conversion element, a floating diffusion (FD) region, and a transfer gate. The photoelectric conversion element is disposed in a substrate, and generates photocharges in response to incident light. The floating diffusion (FD) region is disposed over the photoelectric conversion element, and stores the photocharges generated by the photoelectric conversion element. The transfer gate transfer the photocharges generated by the photoelectric conversion element to the floating diffusion (FD) region in response to a transmission signal. The transfer gate includes a horizontal gate disposed over the photoelectric conversion element, and a vertical gate coupled to the horizontal gate. The vertical gate is positioned at a side of the photoelectric conversion element, and surrounds the photoelectric conversion element.Type: GrantFiled: November 4, 2019Date of Patent: December 6, 2022Assignee: SK hynix Inc.Inventors: Ho Ryeong Lee, Dong Hyun Woo
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Publication number: 20220262836Abstract: An image sensing device is provided to include: a substrate including a photoelectric conversion layer configured to generate photocharges corresponding to the intensity of incident light; a plurality of doping regions disposed along a migration path of the photocharges and doped with dopants in different doping concentrations; and a gate dielectric layer disposed over the substrate and having a gate dielectric layer portion overlapping the plurality of doping regions, the gate dielectric layer portion having a varying thickness that increases along the migration path of the photocharges.Type: ApplicationFiled: November 30, 2021Publication date: August 18, 2022Inventors: Ho Ryeong LEE, Kyoung In LEE
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Publication number: 20210036039Abstract: An image sensing device includes a photoelectric conversion element, a floating diffusion (FD) region, and a transfer gate. The photoelectric conversion element is disposed in a substrate, and generates photocharges in response to incident light. The floating diffusion (FD) region is disposed over the photoelectric conversion element, and stores the photocharges generated by the photoelectric conversion element. The transfer gate transfer the photocharges generated by the photoelectric conversion element to the floating diffusion (FD) region in response to a transmission signal. The transfer gate includes a horizontal gate disposed over the photoelectric conversion element, and a vertical gate coupled to the horizontal gate. The vertical gate is positioned at a side of the photoelectric conversion element, and surrounds the photoelectric conversion element.Type: ApplicationFiled: November 4, 2019Publication date: February 4, 2021Inventors: Ho Ryeong Lee, Dong Hyun Woo
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Patent number: 10381492Abstract: A MOS capacitor may include: an isolation layer formed in a substrate and defining an active region; a first electrode formed in the active region, and including an impurity region spaced from the isolation layer; and a second electrode formed over the substrate overlapping the impurity region, and including a gate having a plurality of gate patterns adjacent to each other with a gap therebetween.Type: GrantFiled: September 20, 2017Date of Patent: August 13, 2019Assignee: SK hynix Inc.Inventors: Sun-Ha Hwang, Pyong-Su Kwag, Sang-Uk Park, Kwang-Deok Kim, Ho-Ryeong Lee, Ju-Tae Ryu
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Patent number: 10096633Abstract: An image sensor includes: a light receiving section suitable for generating photocharges in response to incident light; and a driving section including a source follower transistor suitable for generating an output voltage corresponding to a reference voltage in response to the photocharges. The source follower transistor includes: a stack structure formed by sequentially stacking a first conductive layer, an insulating layer and a second conductive layer; an open portion formed through the second conductive layer and the insulating layer so as to expose the first conductive layer; a channel layer formed along the surface of the open portion so as to be connected to the first conductive layer and the second conductive layer; and a gate is connected to the light receiving section and which is formed over the channel layer so as to overlap the second conductive layer.Type: GrantFiled: June 24, 2016Date of Patent: October 9, 2018Assignee: SK Hynix Inc.Inventors: Pyong-Su Kwag, Min-Ki Na, Dong-Hyun Woo, Ho-Ryeong Lee
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Publication number: 20180277688Abstract: A MOS capacitor may include: an isolation layer formed in a substrate and defining an active region; a first electrode formed in the active region, and including an impurity region spaced from the isolation layer; and a second electrode formed over the substrate overlapping the impurity region, and including a gate having a plurality of gate patterns adjacent to each other with a gap therebetween.Type: ApplicationFiled: September 20, 2017Publication date: September 27, 2018Inventors: Sun-Ha HWANG, Pyong-Su KWAG, Sang-Uk PARK, Kwang-Deok KIM, Ho-Ryeong LEE, Ju-Tae RYU
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Patent number: 10068937Abstract: This technology relates to an image sensor. The image sensor may include a substrate including a photoelectric conversion element; a pillar formed over the photoelectric conversion element and having a concave-convex sidewall; a channel film formed along a surface of the pillar and for having at least one end coupled to the photoelectric conversion element; and a transfer gate formed over the channel film.Type: GrantFiled: July 19, 2016Date of Patent: September 4, 2018Assignee: SK Hynix Inc.Inventors: Yun-Hui Yang, Sung-Kun Park, Pyong-Su Kwag, Ho-Ryeong Lee, Young-Jun Kwon
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Patent number: 10008526Abstract: An image sensor may include: a photoelectric conversion element suitable for generating a photo charge in response to incident light; and a transfer transistor suitable for transferring the photo charge generated by the photoelectric conversion element to a floating diffusion in response to a transfer signal, the transfer transistor comprising a first transfer gate formed over the photoelectric conversion element; an opening formed in the first transfer gate and exposing the photoelectric conversion element; a second transfer gate formed in the opening; and a channel layer interposed between the first and second transfer gates and between the photoelectric conversion element and the second transfer gate.Type: GrantFiled: August 16, 2016Date of Patent: June 26, 2018Assignee: SK Hynix Inc.Inventors: Sung-Kun Park, Yun-Hui Yang, Pyong-Su Kwag, Dong-Hyun Woo, Young-Jun Kwon, Min-Ki Na, Cha-Young Lee, Ho-Ryeong Lee
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Patent number: 9978785Abstract: An image sensor may include: a substrate including a photoelectric conversion element; a first interlayer dielectric layer formed over the photoelectric conversion element; a channel layer including a first region and a second region, the first region being formed in an opening passing through the first interlayer dielectric layer, with a portion of the first region contacting the photoelectric conversion element, and the second region being formed over the first interlayer dielectric layer; a transfer transistor formed over the first region of the channel layer, the transfer transistor including a transfer gate which gapfills the opening; and a reset transistor including a reset gate formed over the second region of the channel layer.Type: GrantFiled: August 16, 2016Date of Patent: May 22, 2018Assignee: SK Hynix Inc.Inventors: Pyong-Su Kwag, Ho-Ryeong Lee
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Patent number: 9929194Abstract: An image sensor includes a photoelectric conversion element including a first impurity region and a second impurity region, wherein the first impurity region contacts a first surface of a substrate, wherein the second impurity region has conductivity complementary to the first impurity region and is formed in the substrate and below the first impurity region; a pillar formed over the photoelectric conversion element; a transfer gate formed over the photoelectric conversion element to surround the pillar; and a channel layer formed between the transfer gate and the pillar and contacting the photoelectric conversion element, wherein the channel layer contacts the first impurity region and has the same conductivity as the second impurity region.Type: GrantFiled: March 1, 2017Date of Patent: March 27, 2018Assignee: SK Hynix Inc.Inventors: Yun-Hui Yang, Pyong-Su Kwag, Young-Jun Kwon, Min-Ki Na, Sung-Kun Park, Donghyun Woo, Cha-Young Lee, Ho-Ryeong Lee
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Publication number: 20170330907Abstract: An image sensor may include: a substrate including a photoelectric conversion element; a first interlayer dielectric layer formed over the photoelectric conversion element; a channel layer including a first region and a second region, the first region being formed in an opening passing through the first interlayer dielectric layer, with a portion of the first region contacting the photoelectric conversion element, and the second region being formed over the first interlayer dielectric layer; a transfer transistor formed over the first region of the channel layer, the transfer transistor including a transfer gate which gapfills the opening; and a reset transistor including a reset gate formed over the second region of the channel layer.Type: ApplicationFiled: August 16, 2016Publication date: November 16, 2017Inventors: Pyong-Su KWAG, Ho-Ryeong LEE
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Publication number: 20170294468Abstract: An image sensor may include: a photoelectric conversion element suitable for generating a photo charge in response to incident light; and a transfer transistor suitable for transferring the photo charge generated by the photoelectric conversion element to a floating diffusion in response to a transfer signal, the transfer transistor comprising a first transfer gate formed over the photoelectric conversion element; an opening formed in the first transfer gate and exposing the photoelectric conversion element; a second transfer gate formed in the opening; and a channel layer interposed between the first and second transfer gates and between the photoelectric conversion element and the second transfer gate.Type: ApplicationFiled: August 16, 2016Publication date: October 12, 2017Inventors: Sung-Kun PARK, Yun-Hui YANG, Pyong-Su KWAG, Dong-Hyun WOO, Young-Jun KWON, Min-Ki NA, Cha-Young LEE, Ho-Ryeong LEE
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Publication number: 20170278884Abstract: This technology relates to an image sensor. The image sensor may include a substrate including a photoelectric conversion element; a pillar formed over the photoelectric conversion element and having a concave-convex sidewall; a channel film formed along a surface of the pillar and for having at least one end coupled to the photoelectric conversion element; and a transfer gate formed over the channel film.Type: ApplicationFiled: July 19, 2016Publication date: September 28, 2017Inventors: Yun-Hui YANG, Sung-Kun PARK, Pyong-Su KWAG, Ho-Ryeong LEE, Young-Jun KWON
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Publication number: 20170278883Abstract: An image sensor includes: a light receiving section suitable for generating photocharges in response to incident light; and a driving section including a source follower transistor suitable for generating an output voltage corresponding to a reference voltage in response to the photocharges. The source follower transistor includes: a stack structure formed by sequentially stacking a first conductive layer, an insulating layer and a second conductive layer; an open portion to formed through the second conductive layer and the insulating layer so as to expose the first conductive layer; a channel layer formed along the surface of the open portion so as to be connected to the first conductive layer and the second conductive layer; and a gate is connected to the light receiving section and which is formed over the channel layer so as to overlap the second conductive layer.Type: ApplicationFiled: June 24, 2016Publication date: September 28, 2017Inventors: Pyong-Su KWAG, Min-Ki NA, Dong-Hyun WOO, Ho-Ryeong LEE
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Publication number: 20170179174Abstract: An image sensor includes a photoelectric conversion element, including a first impurity region and a second impurity region, wherein the first impurity region contacts a first surface of a substrate, wherein the second impurity region has conductivity complementary to the first impurity region and is formed in the substrate and below the first impurity region; a pillar formed over the photoelectric conversion element; a transfer gate formed over the photoelectric conversion element to surround the pillar; and a channel layer formed between the transfer gate and the pillar and contacting the photoelectric conversion element, wherein the channel layer contacts the first impurity region and has the same conductivity as the second impurity region.Type: ApplicationFiled: March 1, 2017Publication date: June 22, 2017Inventors: Yun-Hui YANG, Pyong-Su KWAG, Young-Jun KWON, Min-Ki NA, Sung-Kun PARK, Donghyun WOO, Cha-Young LEE, Ho-Ryeong LEE
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Patent number: 9620540Abstract: An image sensor includes a photoelectric conversion element including a first impurity region and a second impurity region, wherein the first impurity region contacts a first surface of a substrate, wherein the second impurity region has conductivity complementary to the first impurity region and is formed in the substrate and below the first impurity region; a pillar formed over the photoelectric conversion element; a transfer gate formed over the photoelectric conversion element to surround the pillar; and a channel layer formed between the transfer gate and the pillar and contacting the photoelectric conversion element, wherein the channel layer contacts the first impurity region and has the same conductivity as the second impurity region.Type: GrantFiled: February 9, 2016Date of Patent: April 11, 2017Assignee: SK Hynix Inc.Inventors: Yun-Hui Yang, Pyong-Su Kwag, Young-Jun Kwon, Min-Ki Na, Sung-Kun Park, Donghyun Woo, Cha-Young Lee, Ho-Ryeong Lee