Patents by Inventor Ho Seop Eom
Ho Seop Eom has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
-
Publication number: 20230116129Abstract: A self-assembled nanostructure comprises first domains and second domains. The first domains comprise a first block of a block copolymer material and an activatable catalyst. The second domains comprise a second block and substantially without the activatable catalyst. The activatable catalyst is capable of generating catalyst upon application of activation energy, and the generated catalyst is capable of reacting with a metal oxide precursor to provide a metal oxide. A semiconductor structure comprises such self-assembled nanostructure on a substrate.Type: ApplicationFiled: December 6, 2022Publication date: April 13, 2023Inventors: Nicholas Hendricks, Adam L. Olson, William R. Brown, Ho Seop Eom, Xue Chen, Kaveri Jain, Scott Schuldenfrei
-
Patent number: 11532477Abstract: A self-assembled nanostructure comprises first domains and second domains. The first domains comprise a first block of a block copolymer material and an activatable catalyst. The second domains comprise a second block and substantially without the activatable catalyst. The activatable catalyst is capable of generating catalyst upon application of activation energy, and the generated catalyst is capable of reacting with a metal oxide precursor to provide a metal oxide. A semiconductor structure comprises such self-assembled nanostructure on a substrate.Type: GrantFiled: July 30, 2018Date of Patent: December 20, 2022Assignee: Micron Technology, Inc.Inventors: Nicholas Hendricks, Adam L. Olson, William R. Brown, Ho Seop Eom, Xue Chen, Kaveri Jain, Scott Schuldenfrei
-
Patent number: 10522461Abstract: A method of forming a semiconductor structure comprises forming pools of acidic or basic material in a substrate structure. A resist is formed over the pools of acidic or basic material and the substrate structure. The acidic or basic material is diffused from the pools into portions of the resist proximal to the pools more than into portions of the resist distal to the pools. Then, the resist is exposed to a developer to remove a greater amount of the resist portions proximal to the pools compared to the resist portions distal to the pools to form openings in the resist. The openings have wider portions proximal to the substrate structure and narrower portions distal to the substrate structure. The method may further comprise forming features in the openings of the resist. The features have wider portions proximal to the substrate structure and narrower portions distal to the substrate structure.Type: GrantFiled: July 23, 2018Date of Patent: December 31, 2019Assignee: Micron Technology, Inc.Inventors: Adam L. Olson, Kaveri Jain, Lijing Gou, William R. Brown, Ho Seop Eom, Xue (Gloria) Chen, Anton J. deVilliers
-
Publication number: 20180366406Abstract: A method of forming a semiconductor structure comprises forming pools of acidic or basic material in a substrate structure. A resist is formed over the pools of acidic or basic material and the substrate structure. The acidic or basic material is diffused from the pools into portions of the resist proximal to the pools more than into portions of the resist distal to the pools. Then, the resist is exposed to a developer to remove a greater amount of the resist portions proximal to the pools compared to the resist portions distal to the pools to form openings in the resist. The openings have wider portions proximal to the substrate structure and narrower portions distal to the substrate structure. The method may further comprise forming features in the openings of the resist. The features have wider portions proximal to the substrate structure and narrower portions distal to the substrate structure.Type: ApplicationFiled: July 23, 2018Publication date: December 20, 2018Inventors: Adam L. Olson, Kaveri Jain, Lijing Gou, William R. Brown, Ho Seop Eom, Xue (Gloria) Chen, Anton J. deVilliers
-
Publication number: 20180337035Abstract: A self-assembled nanostructure comprises first domains and second domains. The first domains comprise a first block of a block copolymer material and an activatable catalyst. The second domains comprise a second block and substantially without the activatable catalyst. The activatable catalyst is capable of generating catalyst upon application of activation energy, and the generated catalyst is capable of reacting with a metal oxide precursor to provide a metal oxide. A semiconductor structure comprises such self-assembled nanostructure on a substrate.Type: ApplicationFiled: July 30, 2018Publication date: November 22, 2018Inventors: Nicholas Hendricks, Adam L. Olson, William R. Brown, Ho Seop Eom, Xue Chen, Kaveri Jain, Scott Schuldenfrei
-
Patent number: 10049874Abstract: A self-assembled nanostructure comprises first domains and second domains. The first domains comprise a first block of a block copolymer material and an activatable catalyst. The second domains comprise a second block and substantially without the activatable catalyst. The activatable catalyst is capable of generating catalyst upon application of activation energy, and the generated catalyst is capable of reacting with a metal oxide precursor to provide a metal oxide. A semiconductor structure comprises such self-assembled nanostructure on a substrate.Type: GrantFiled: October 22, 2015Date of Patent: August 14, 2018Assignee: Micron Technology, Inc.Inventors: Nicholas Hendricks, Adam L. Olson, William R. Brown, Ho Seop Eom, Xue Chen, Kaveri Jain, Scott Schuldenfrei
-
Patent number: 10032719Abstract: A method of forming a semiconductor structure comprises forming pools of acidic or basic material in a substrate structure. A resist is formed over the pools of acidic or basic material and the substrate structure. The acidic or basic material is diffused from the pools into portions of the resist proximal to the pools more than into portions of the resist distal to the pools. Then, the resist is exposed to a developer to remove a greater amount of the resist portions proximal to the pools compared to the resist portions distal to the pools to form openings in the resist. The openings have wider portions proximal to the substrate structure and narrower portions distal to the substrate structure. The method may further comprise forming features in the openings of the resist. The features have wider portions proximal to the substrate structure and narrower portions distal to the substrate structure.Type: GrantFiled: May 26, 2017Date of Patent: July 24, 2018Assignee: Micron Technology Inc.Inventors: Adam L. Olson, Kaveri Jain, Lijing Gou, William R. Brown, Ho Seop Eom, Xue (Gloria) Chen, Anton J. deVilliers
-
Publication number: 20170263552Abstract: A method of forming a semiconductor structure comprises forming pools of acidic or basic material in a substrate structure. A resist is formed over the pools of acidic or basic material and the substrate structure. The acidic or basic material is diffused from the pools into portions of the resist proximal to the pools more than into portions of the resist distal to the pools. Then, the resist is exposed to a developer to remove a greater amount of the resist portions proximal to the pools compared to the resist portions distal to the pools to form openings in the resist. The openings have wider portions proximal to the substrate structure and narrower portions distal to the substrate structure. The method may further comprise forming features in the openings of the resist. The features have wider portions proximal to the substrate structure and narrower portions distal to the substrate structure.Type: ApplicationFiled: May 26, 2017Publication date: September 14, 2017Inventors: Adam L. Olson, Kaveri Jain, Lijing Gou, William R. Brown, Ho Seop Eom, Xue (Gloria) Chen, Anton J. deVilliers
-
Patent number: 9666531Abstract: A method of forming a semiconductor structure comprises forming pools of acidic or basic material in a substrate structure. A resist is formed over the pools of acidic or basic material and the substrate structure. The acidic or basic material is diffused from the pools into portions of the resist proximal to the pools more than into portions of the resist distal to the pools. Then, the resist is exposed to a developer to remove a greater amount of the resist portions proximal to the pools compared to the resist portions distal to the pools to form openings in the resist. The openings have wider portions proximal to the substrate structure and narrower portions distal to the substrate structure. The method may further comprise forming features in the openings of the resist. The features have wider portions proximal to the substrate structure and narrower portions distal to the substrate structure.Type: GrantFiled: June 24, 2016Date of Patent: May 30, 2017Assignee: Micron Technology, Inc.Inventors: Adam L. Olson, Kaveri Jain, Lijing Gou, William R. Brown, Ho Seop Eom, Xue Chen, Anton J. deVilliers
-
Publication number: 20160307839Abstract: A method of forming a semiconductor structure comprises forming pools of acidic or basic material in a substrate structure. A resist is formed over the pools of acidic or basic material and the substrate structure. The acidic or basic material is diffused from the pools into portions of the resist proximal to the pools more than into portions of the resist distal to the pools. Then, the resist is exposed to a developer to remove a greater amount of the resist portions proximal to the pools compared to the resist portions distal to the pools to form openings in the resist. The openings have wider portions proximal to the substrate structure and narrower portions distal to the substrate structure. The method may further comprise forming features in the openings of the resist. The features have wider portions proximal to the substrate structure and narrower portions distal to the substrate structure.Type: ApplicationFiled: June 24, 2016Publication date: October 20, 2016Inventors: Adam L. Olson, Kaveri Jain, Lijing Gou, William R. Brown, Ho Seop Eom, Xue Chen, Anton J. deVilliers
-
Patent number: 9418848Abstract: Some embodiments include methods of forming patterns. A first mask is formed over a material. The first mask has features extending therein and defines a first pattern. The first pattern has a first level of uniformity across a distribution of the features. A brush layer is formed across the first mask and within the features to narrow the features and create a second mask from the first mask. The second mask has a second level of uniformity across the narrowed features which is greater than the first level of uniformity. A pattern is transferred from the second mask into the material.Type: GrantFiled: October 1, 2015Date of Patent: August 16, 2016Assignees: Micron Technology, Inc., Dow Global Technologies LLC, Rohm and Haas Electronic Materials LLCInventors: William R. Brown, Adam Olson, Kaveri Jain, Ho Seop Eom, Xue Gloria Chen, Nik Mirin, Dan Millward, Peter Trefonas, III, Phillip Dene Hustad, Jong Keun Park, Christopher Nam Lee
-
Patent number: 9396996Abstract: A method of forming a semiconductor structure comprises forming pools of acidic or basic material in a substrate structure. A resist is formed over the pools of acidic or basic material and the substrate structure. The acidic or basic material is diffused from the pools into portions of the resist proximal to the pools more than into portions of the resist distal to the pools. Then, the resist is exposed to a developer to remove a greater amount of the resist portions proximal to the pools compared to the resist portions distal to the pools to form openings in the resist. The openings have wider portions proximal to the substrate structure and narrower portions distal to the substrate structure. The method may further comprise forming features in the openings of the resist. The features have wider portions proximal to the substrate structure and narrower portions distal to the substrate structure.Type: GrantFiled: September 9, 2015Date of Patent: July 19, 2016Assignee: Micron Technology, Inc.Inventors: Adam L. Olson, Kaveri Jain, Lijing Gou, William R. Brown, Ho Seop Eom, Xue (Gloria) Chen, Anton J. deVilliers
-
Patent number: 9291907Abstract: Methods of forming resist features, resist patterns, and arrays of aligned, elongate resist features are disclosed. The methods include addition of a compound, e.g., an acid or a base, to at least a lower surface of a resist to alter acidity of at least a segment of one of an exposed, acidic resist region and an unexposed, basic resist region. The alteration, e.g., increase or decrease, in the acidity shifts an acid-base equilibrium to either encourage or discourage development of the segment. Such “chemical proximity correction” techniques may be used to enhance the acidity of an exposed, acidic resist segment, to enhance the basicity of an unexposed, basic resist segment, or to effectively convert an exposed, acidic resist segment to an unexposed, basic resist segment or vice versa. Thus, unwanted line breaks, line merges, or misalignments may be avoided.Type: GrantFiled: May 18, 2012Date of Patent: March 22, 2016Assignee: Micron Technology, Inc.Inventors: Kaveri Jain, Adam L. Olson, William R. Brown, Lijing Gou, Ho Seop Eom, Anton J. deVilliers
-
Publication number: 20160042941Abstract: A self-assembled nanostructure comprises first domains and second domains. The first domains comprise a first block of a block copolymer material and an activatable catalyst. The second domains comprise a second block and substantially without the activatable catalyst. The activatable catalyst is capable of generating catalyst upon application of activation energy, and the generated catalyst is capable of reacting with a metal oxide precursor to provide a metal oxide. A semiconductor structure comprises such self-assembled nanostructure on a substrate.Type: ApplicationFiled: October 22, 2015Publication date: February 11, 2016Inventors: Nicholas Hendricks, Adam L. Olson, William R. Brown, Ho Seop Eom, Xue Chen, Kaveri Jain, Scott Schuldenfrei
-
Publication number: 20160027638Abstract: Some embodiments include methods of forming patterns. A first mask is formed over a material. The first mask has features extending therein and defines a first pattern. The first pattern has a first level of uniformity across a distribution of the features. A brush layer is formed across the first mask and within the features to narrow the features and create a second mask from the first mask. The second mask has a second level of uniformity across the narrowed features which is greater than the first level of uniformity. A pattern is transferred from the second mask into the material.Type: ApplicationFiled: October 1, 2015Publication date: January 28, 2016Inventors: William R. Brown, Adam Olson, Kaveri Jain, Ho Seop Eom, Xue Gloria Chen, Nik Mirin, Dan Millward, Peter Trefonas, III, Phillip Dene Hustad, Jong Keun Park, Christopher Nam Lee
-
Publication number: 20150380307Abstract: A method of forming a semiconductor structure comprises forming pools of acidic or basic material in a substrate structure. A resist is formed over the pools of acidic or basic material and the substrate structure. The acidic or basic material is diffused from the pools into portions of the resist proximal to the pools more than into portions of the resist distal to the pools. Then, the resist is exposed to a developer to remove a greater amount of the resist portions proximal to the pools compared to the resist portions distal to the pools to form openings in the resist. The openings have wider portions proximal to the substrate structure and narrower portions distal to the substrate structure. The method may further comprise forming features in the openings of the resist. The features have wider portions proximal to the substrate structure and narrower portions distal to the substrate structure.Type: ApplicationFiled: September 9, 2015Publication date: December 31, 2015Inventors: Adam L. Olson, Kaveri Jain, Lijing Gou, William R. Brown, Ho Seop Eom, Xue (Gloria) Chen, Anton J. deVilliers
-
Patent number: 9184058Abstract: Some embodiments include methods of forming patterns. A first mask is formed over a material. The first mask has features extending therein and defines a first pattern. The first pattern has a first level of uniformity across a distribution of the features. A brush layer is formed across the first mask and within the features to narrow the features and create a second mask from the first mask. The second mask has a second level of uniformity across the narrowed features which is greater than the first level of uniformity. A pattern is transferred from the second mask into the material.Type: GrantFiled: December 23, 2013Date of Patent: November 10, 2015Assignee: Micron Technology, Inc.Inventors: William R. Brown, Adam Olson, Kaveri Jain, Ho Seop Eom, Xue Gloria Chen, Nik Mirin, Dan Millward, Peter Trefonas, III, Phillip Dene Hustad, Jong Keun Park, Christopher Nam Lee
-
Patent number: 9177795Abstract: A method of forming nanostructures may include forming a block copolymer composition within a trench in a material on a substrate, wherein the block copolymer composition may comprise a block copolymer material and an activatable catalyst having a higher affinity for a first block of the block copolymer material compared to a second block of the block copolymer material; self-assembling the block copolymer composition into first domains comprising the first block and the activatable catalyst, and second domains comprising the second block; generating catalyst from the activatable catalyst in at least one portion of the first domains to produce a structure comprising catalyst-containing domains and the second domains, the catalyst-containing domains comprising the first block and the catalyst; and reacting a metal oxide precursor with the catalyst in the catalyst-containing domains to produce a metal oxide-containing structure comprising the first block and metal oxide.Type: GrantFiled: September 27, 2013Date of Patent: November 3, 2015Assignee: Micron Technology, Inc.Inventors: Nicholas Hendricks, Adam L. Olson, William R. Brown, Ho Seop Eom, Xue Chen, Kaveri Jain, Scott Schuldenfrei
-
Patent number: 9142504Abstract: Methods of forming features are disclosed. One method comprises forming a resist over a pool of acidic or basic material on a substrate structure, selectively exposing the resist to an energy source to form exposed resist portions and non-exposed resist portions, and diffusing acid or base of the acidic or basic material from the pool into proximal portions of the resist. Another method comprises forming a plurality of recesses in a substrate structure. The plurality of recesses are filled with a pool material comprising acid or base. A resist is formed over the pool material and the substrate structure and acid or base is diffused into adjacent portions of the resist. The resist is patterned to form openings in the resist. The openings comprise wider portions distal to the substrate structure and narrower portions proximal to the substrate structure. Additional methods and semiconductor device structures including the features are disclosed.Type: GrantFiled: August 12, 2014Date of Patent: September 22, 2015Assignee: MICRON TECHNOLOGY, INC.Inventors: Adam L. Olson, Kaveri Jain, Lijing Gou, William R. Brown, Ho Seop Eom, Xue Chen, Anton J. deVilliers
-
Publication number: 20150179467Abstract: Some embodiments include methods of forming patterns. A first mask is formed over a material. The first mask has features extending therein and defines a first pattern. The first pattern has a first level of uniformity across a distribution of the features. A brush layer is formed across the first mask and within the features to narrow the features and create a second mask from the first mask. The second mask has a second level of uniformity across the narrowed features which is greater than the first level of uniformity. A pattern is transferred from the second mask into the material.Type: ApplicationFiled: December 23, 2013Publication date: June 25, 2015Applicants: Micron Technology, Inc., Rohm and Haas Electronic Materials LLC, Dow Global Technologies LLCInventors: William R. Brown, Adam Olson, Kaveri Jain, Ho Seop Eom, Xue Gloria Chen, Nik Mirin, Dan Millward, Peter Trefonas, III, Phillip Dene Hustad, Jong Keun Park, Christopher Nam Lee