Patents by Inventor Ho-Ung Kim

Ho-Ung Kim has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Semiconductor device with gate edge protrusion
    Patent number: 8530975
    Abstract: A semiconductor device includes a substrate having an active region and an isolation region, a gate pattern crossing both the active region and the isolation region of the substrate, and a protrusion having a surface higher than that of the substrate over at least an edge of the active region contacting a portion of the isolation region under the gate pattern.
    Type: Grant
    Filed: May 29, 2012
    Date of Patent: September 10, 2013
    Assignee: SK hynix Inc.
    Inventor: Ho-Ung Kim
  • SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME
    Publication number: 20120235248
    Abstract: A semiconductor device includes a substrate having an active region and an isolation region, a gate pattern crossing both the active region and the isolation region of the substrate, and a protrusion having a surface higher than that of the substrate over at least an edge of the active region contacting a portion of the isolation region under the gate pattern.
    Type: Application
    Filed: May 29, 2012
    Publication date: September 20, 2012
    Applicant: Hynix Semiconductor Inc.
    Inventor: Ho-Ung KIM
  • Method for fabricating a semiconductor device with a substrate protrusion
    Patent number: 8187931
    Abstract: A semiconductor device includes a substrate having an active region and an isolation region, a gate pattern crossing both the active region and the isolation region of the substrate, and a protrusion having a surface higher than that of the substrate over at least an edge of the active region contacting a portion of the isolation region under the gate pattern.
    Type: Grant
    Filed: June 29, 2008
    Date of Patent: May 29, 2012
    Assignee: Hynix Semiconductor Inc.
    Inventor: Ho-Ung Kim
  • SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME
    Publication number: 20090090985
    Abstract: A semiconductor device includes a substrate having an active region and an isolation region, a gate pattern crossing both the active region and the isolation region of the substrate, and a protrusion having a surface higher than that of the substrate over at least an edge of the active region contacting a portion of the isolation region under the gate pattern.
    Type: Application
    Filed: June 29, 2008
    Publication date: April 9, 2009
    Applicant: Hynix Semiconductor Inc.
    Inventor: Ho-Ung KIM