Abstract: Provided are a device and method for tagging training data. The method includes detecting and tracking one or more objects included in a video using artificial intelligence (AI), when there is an object to be split in a result of tracking the detected objects, splitting the object in object units, and when there are identical objects to be merged among split objects, merging the objects.

Abstract: A semiconductor memory device comprises a substrate; a mold structure on the substrate; a plurality of channel structures extending in the mold structure; a source layer and a source sacrificial layer between the substrate and the mold structure, wherein the source sacrificial layer is spaced apart from the source layer; and a source support layer on the source layer and the source sacrificial layer, wherein the source support layer is between the source layer and the source sacrificial layer, wherein an upper surface of the source support layer includes first and second portions extending parallel to the substrate, and a third portion that connects the first and second portions, wherein a vertical distance from an upper surface of the source layer to the first portion is smaller than a vertical distance from an upper surface of the substrate to the second portion.

Abstract: Disclosed herein is a method of printing a nanostructure including: preparing a template substrate on which a pattern is formed; forming a replica pattern having an inverse phase of the pattern by coating a polymer thin film on an upper portion of the template substrate, adhering a thermal release tape to an upper portion of the polymer thin film, and separating the polymer thin film from the template substrate; forming a nanostructure by depositing a functional material on the replica pattern; and printing the nanostructure deposited on the replica pattern to a substrate by positioning the nanostructure on the substrate, applying heat and pressure to the nanostructure, and weakening an adhesive force between the thermal release tape and the replica pattern by the heat.

Abstract: A light-emitting device may include a plurality of light-emitting rods. Each of the plurality of light-emitting rods may include a first semiconductor layer having a rod shape, an active layer having a shell shape disposed about a plurality of surfaces of the first semiconductor layer, and a second semiconductor layer having a shell shape disposed about a plurality of surfaces of the active layer. The light emitting device may further include an insulating layer disposed in spaces between the plurality of light-emitting rods; a transparent electrode electrically connected to the first semiconductor layer of each of the plurality of light-emitting rods; and a reflective electrode electrically connected to the second semiconductor layer of each of the plurality of light-emitting rods.

Abstract: Provided is a field effect transistor including a gate insulating layer having a two-dimensional material. The field effect transistor may include a first channel layer; a second channel layer disposed on the first channel layer; a gate insulating layer disposed on the second channel layer; a gate electrode disposed on the gate insulating layer; a first electrode electrically connected to the first channel layer; and a second electrode electrically connected to the second channel layer. Here, the gate insulating layer may include an insulative, high-k, two-dimensional material.

Abstract: The present invention provides a neuromorphic memristor device, which includes a resistive switching layer formed on a lower electrode; and an upper electrode formed on the resistive switching layer, in which the resistive switching layer includes an organic metal halide having a perovskite crystal structure.

Abstract: The present invention relates to a surface-decorated flexible graphene self-heating gas sensor, which has a pattern of graphene formed on a flexible substrate, has a part of the pattern of graphene decorated with metal nanoparticles, and detects a gas by applying an external voltage.

Abstract: Provided is a field effect transistor including a gate insulating layer having a two-dimensional material. The field effect transistor may include a first channel layer; a second channel layer disposed on the first channel layer; a gate insulating layer disposed on the second channel layer; a gate electrode disposed on the gate insulating layer; a first electrode electrically connected to the first channel layer; and a second electrode electrically connected to the second channel layer. Here, the gate insulating layer may include an insulative, high-k, two-dimensional material.

Abstract: Provided is a resistive-switching memory containing a positive electrode, a negative electrode and a resistive switching layer provided between the positive electrode and the negative electrode, the resistance of which is switched by an applied voltage, wherein the resistive switching layer contains a compound of the chemical formula (A?)2An?1BnX3n+1, wherein A? is an ammonium ion having an asymmetric structure and containing a phenyl group, A is a monovalent metal ion and X is a halogen ion, the A? has an asymmetric ion distribution which may be rotated by an applied electric field, and n is a value between 1 and ?.

Abstract: Provided are a semiconductor structure and a method of manufacturing the same. The semiconductor structure includes a substrate, a membrane bridge that defines, with the substrate, a plurality of cavities, and a nitride semiconductor layer arranged on the membrane bridge. The membrane bridge and the substrate have the same crystal structure. The membrane bridge has an upper surface with a constant height with respect to a surface of the substrate.

Abstract: An LED device includes a light emission layer including a first semiconductor layer including a first surface and a second surface facing the first surface, the second surface having an area larger than an area of the first surface, an active layer on the first surface, and a second semiconductor layer on the active layer, an insulating layer on the first surface, the insulating layer defining an open region of the first semiconductor layer, a first electrode that contacts the first semiconductor layer via the open region, and a second electrode on the second semiconductor layer and contacting the second semiconductor layer.

Abstract: Provided is a field effect transistor including a gate insulating layer having a two-dimensional material. The field effect transistor may include a first channel layer; a second channel layer disposed on the first channel layer; a gate insulating layer disposed on the second channel layer; a gate electrode disposed on the gate insulating layer; a first electrode electrically connected to the first channel layer; and a second electrode electrically connected to the second channel layer. Here, the gate insulating layer may include an insulative, high-k, two-dimensional material.

Abstract: The present disclosure provides a method for manufacturing a flexible device having a pattern of a two-dimensional material formed thereon includes: a step of forming a two-dimensional material layer on a substrate; a step of forming a pattern of the two-dimensional material; a step of coating a flexible substrate solution on the patterned two-dimensional material layer and curing the same; and a step of removing the substrate.

Abstract: Provided is a resistive-switching memory containing a positive electrode, a negative electrode and a resistive switching layer provided between the positive electrode and the negative electrode, the resistance of which is switched by an applied voltage, wherein the resistive switching layer contains a compound of the chemical formula (A?)2An?1BnX3n+1, wherein A? is an ammonium ion having an asymmetric structure and containing a phenyl group, A is a monovalent metal ion and X is a halogen ion, the A? has an asymmetric ion distribution which may be rotated by an applied electric field, and n is a value between 1 and ?.

Abstract: The present invention relates to a surface-decorated flexible graphene self-heating gas sensor, which has a pattern of graphene formed on a flexible substrate, has a part of the pattern of graphene decorated with metal nanoparticles, and detects a gas by applying an external voltage.

Abstract: The present disclosure provides a method for manufacturing a flexible device having a pattern of a two-dimensional material formed thereon includes: a step of forming a two-dimensional material layer on a substrate; a step of forming a pattern of the two-dimensional material; a step of coating a flexible substrate solution on the patterned two-dimensional material layer and curing the same; and a step of removing the substrate.

Abstract: The present disclosure provides a gas sensor including: a substrate; an electrode formed on the substrate; and a gas-sensing layer formed on the electrode, wherein the gas-sensing layer is a self-heating nanocolumnar structure having nanocolumns formed on the electrode and inclined with respect to the electrode with an angle of 60-89° and gas diffusion pores formed between the nanocolumns. The gas sensor according to the present disclosure requires no additional heater since it self-heats owing to the nanocolumnar structure and exhibits superior gas sensitivity even when no heat is applied from outside. Also, it can be mounted on mobile devices such as mobile phones because it consumes less power.

Abstract: A method for forming a metal electrode and a method for manufacturing semiconductor light emitting elements include providing a substrate having a semiconductor layer formed thereon; forming a bonding metal layer and a reflective metal layer on the semiconductor layer; and forming a metal electrode by layer inversion of the bonding metal layer and the reflective metal layer through a heat treatment process. An interface characteristic between a semiconductor layer and an electrode having a reflective metal layer is enhanced by a layer inversion phenomenon. High reflectivity can be obtained, because a reflection metal layer is uniformly distributed on a semiconductor layer. Further, out-diffusion of a reflective metal layer is prevented through layer inversion to enhance the thermal stability of an electrode. And the number of accepters for generating holes is increased through heat treatment under an oxygen atmosphere, so that contact resistance can be lowered.

Abstract: The present disclosure provides a gas sensor including: a substrate; an electrode formed on the substrate; and a gas-sensing layer formed on the electrode, wherein the gas-sensing layer is a self-heating nanocolumnar structure having nanocolumns formed on the electrode and inclined with respect to the electrode with an angle of 60-89° and gas diffusion pores formed between the nanocolumns. The gas sensor according to the present disclosure requires no additional heater since it self-heats owing to the nanocolumnar structure and exhibits superior gas sensitivity even when no heat is applied from outside. Also, it can be mounted on mobile devices such as mobile phones because it consumes less power.

Abstract: Disclosed are a high-sensitivity transparent gas sensor and a method for manufacturing the same. The transparent gas sensor includes a transparent substrate, a transparent electrode formed on the transparent substrate and a transparent gas-sensing layer formed on the transparent electrode. The transparent gas-sensing layer has a nanocolumnar structure having nanocolumns formed on the transparent electrode and gas diffusion pores formed between the nanocolumns.