Patents by Inventor Ho Yong Lee
Ho Yong Lee has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 8119022Abstract: A piezoelectric single crystal and piezoelectric and dielectric application parts using the same are provided, which have all of high dielectric constant K3T, high piezoelectric constants (d33 and k33), high phase transition temperatures (Tc and TRT), high coercive electric field Ec and improved mechanical properties and thus can be used in high temperature ranges and high voltage conditions. Furthermore, the piezoelectric single crystals are produced by the solid-state single crystal growth adequate for mass production of single crystals and the single crystal composition is developed not to contain expensive raw materials so that the piezoelectric single crystals can be easily commercialized. With the piezoelectric single crystals and piezoelectric single crystal application parts, the piezoelectric and dielectric application parts using the piezoelectric single crystals of excellent properties can be produced and used in the wide temperature range.Type: GrantFiled: November 6, 2006Date of Patent: February 21, 2012Assignee: Ceracomp Co., Ltd.Inventors: Ho-Yong Lee, Sung-Min Lee, Dong-Ho Kim
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Publication number: 20110133437Abstract: A front airbag including a sub-string and a vent. The front airbag attenuates impact in order to provide protection to a child or an occupant in an abnormal position on a passenger seat. Upon a vehicle collision, the front airbag discharges internal air through a vent provided at the lateral surface of the front airbag, if the front airbag is not inflated at the front, but is instead laterally inflated. The front airbag includes a main tether provided at a central portion of an airbag cushion, a vent selectively discharging air to an outside from the front airbag, and a sub-string, connected to and between the main tether, to control opening/closing of the vent part.Type: ApplicationFiled: December 8, 2010Publication date: June 9, 2011Inventors: Sung Geun Jang, Ho Yong Lee
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Publication number: 20090211515Abstract: By controlling the average size of matrix grains of polycrystalline bodies to more than a critical size at which an abnormal, exaggerated or discontinuous grain growth ends, and less than twice the critical size, large single crystals enough for practical use may be made even without occurring abnormal grain growth in polycrystalline bodies only through a heat treatment process without using a melting process and a special apparatus, thereby allowing the mass production of the large single crystals at low costs with high reproduction possibility.Type: ApplicationFiled: February 19, 2009Publication date: August 27, 2009Applicant: CERACOMP CO., LTD.Inventors: Ho-Yong LEE, Jong-Bong LEE, Tae-Moo HUR, Dong-Ho KIM
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Publication number: 20080290315Abstract: A piezoelectric single crystal and piezoelectric and dielectric application parts using the same are provided, which have all of high dielectric constant K3T, high piezoelectric constants (d33 and k33), high phase transition temperatures (Tc and TRT), high coercive electric field Ec and improved mechanical properties and thus can be used in high temperature ranges and high voltage conditions. Furthermore, the piezoelectric single crystals are produced by the solid-state single crystal growth adequate for mass production of single crystals and the single crystal composition is developed not to contain expensive raw materials so that the piezoelectric single crystals can be easily commercialized. With the piezoelectric single crystals and piezoelectric single crystal application parts, the piezoelectric and dielectric application parts using the piezoelectric single crystals of excellent properties can be produced and used in the wide temperature range.Type: ApplicationFiled: November 6, 2006Publication date: November 27, 2008Applicant: Ceracomp Co., Ltd.Inventors: Ho-Yong Lee, Sung-Min Lee, Dong-Ho Kim
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Patent number: 7208041Abstract: An effective, simple and low-cost a method for growing single crystals of perovskite oxideshaving primary and secondary abnormal grain growths according to temperature condition higher than a determined temperature or an atmosphere of heat treatment, involves a perovskite seed single crystal being adjoined to a polycrystal of perovskite oxides and heating the adjoined combination whereby the seed single crystal grows into the polycrystal at the interface therebetween repressing secondary abnormal grain growths inside the polycrystal. 1) The composition ratio of the polycrystal is controlled and/or the specific component(s) of the polycrystal is(are) added in an excess amount compared to the amount of the component(s) of the original composition of the polycrystal, 2) the heating is performed in the temperature range which is over primary abnormal grain growths completion temperature and below secondary abnormal grain growths activation temperature, whereby the seed single crystal grows continuously.Type: GrantFiled: May 14, 2004Date of Patent: April 24, 2007Assignee: Ceracomp Co., Ltd.Inventors: Ho-Yong Lee, Jong-Bong Lee, Tae-Moo Hur
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Publication number: 20050150446Abstract: The invention relates to a method for growing single crystals in polycrystalline bodies in which abnormal grain growth occurs. The method is characterized by controlling the average size of matrix grains of polycrystalline bodies in which abnormal grain growth occurs, whereby reducing the number density (number of abnormal grains/unit volume) of abnormal grains to generate only a extremely limited number of abnormal grains or inhibit the generation of abnormal grains within the extent of guaranteeing the driving force of abnormal grain growth. Therefore, the invention grows continuously only the extremely limited number of abnormal grains or only the seed single crystal into the polycrystalline body to obtain a large single crystal having a size larger than 50 mm.Type: ApplicationFiled: October 9, 2003Publication date: July 14, 2005Applicant: CERACOMP CO. LTDInventors: Ho-Yong Lee, Jong-Bong Lee, Tae-Moo Hur, Dong-Ho Kim
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Publication number: 20040206296Abstract: An effective, simple and low-cost a method for growing single crystals of perovskite oxideshaving primary and secondary abnormal grain growths according to temperature condition higher than a determined temperature or an atmosphere of heat treatment, involves a perovskite seed single crystal being adjoined to a polycrystal of perovskite oxides and heating the adjoined combination whereby the seed single crystal grows into the polycrystal at the interface therebetween repressing secondary abnormal grain growths inside the polycrystal. 1) The composition ratio of the polycrystal is controlled and/or the specific component(s) of the polycrystal is(are) added in an excess amount compared to the amount of the component(s) of the original composition of the polycrystal, 2) the heating is performed in the temperature range which is over primary abnormal grain growths completion temperature and below secondary abnormal grain growths activation temperature, whereby the seed single crystal grows continuously.Type: ApplicationFiled: May 14, 2004Publication date: October 21, 2004Applicant: CERACOMP CO., LTD.Inventors: Ho-Yong Lee, Jong-Bong Lee, Tae-Moo Hur
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Patent number: 6758898Abstract: The invention relates to a method for growing single crystals of barium titanate [BaTiO3] and barium titanate solid solutions [(BaxM1−x)(TiyN1−y)O3]. This invention is directed to a method for growing single crystals of barium titanate or barium titanate solid solutions showing the primary and secondary abnormal grain growths with increasing temperature higher than the liquid formation temperature, characterized by comprising the step for a few secondary abnormal grains to continue to grow at a temperature slightly below the critical temperature where the secondary abnormal grain growth starts to occur. The method for growing single crystals of barium titanate or barium titanate solid solutions according to this invention has the advantage of providing an effective low cost in manufacturing process for single crystals by using a conventional heat-treatment process without the need of special equipment.Type: GrantFiled: June 7, 2002Date of Patent: July 6, 2004Assignee: Ceracomp Co. Ltd.Inventors: Ho-Yong Lee, Jao-Suk Kim, Jong-Bong Lee, Tae-Moo Hur, Doe-Yeon Kim, Nong-Moon Hwang, Byoung-Ki Lee, Sung-Yoon Chung, Suk-Joong L. Kang
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Patent number: 6548011Abstract: A method of manufacturing an alumina-based ceramic includes sintering a powder compact of an iron-containing alumina powder in an atmosphere (N2, 95 N2-5 H2, H2) of a relatively low oxygen partial pressure, and annealing in an atmosphere (80 N2-20 O2, O2) higher in oxygen partial pressure than the sintering atmosphere to provide an alumina-based ceramic with a grain-boundary migration layer on a surface thereof. The resulting undulated grain boundaries on the surface layer suppress and deflect the crack propagation, thereby improving the short-crack toughness. The formation of a grain-boundary migration layer on the surface of an alumina-based ceramic brings about a great improvement in short-crack related properties, including durability and wear resistance.Type: GrantFiled: October 12, 2000Date of Patent: April 15, 2003Assignee: Korea Advanced Institute of Science and TechnologyInventors: Young Woo Rhee, Ho Yong Lee, Suk Joong Kang
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Publication number: 20030015130Abstract: The invention relates to a method for growing single crystals of barium titanate [BaTiO3] and barium titanate solid solutions [(BaxM1-x)(TiyN1-y)O3]. This invention is directed to a method for growing single crystals of barium titanate or barium titanate solid solutions showing the primary and secondary abnormal grain growths with increasing temperature higher than the liquid formation temperature, characterized by comprising the step for a few secondary abnormal grains to continue to grow at a temperature slightly below the critical temperature where the secondary abnormal grain growth starts to occur. The method for growing single crystals of barium titanate or barium titanate solid solutions according to this invention has the advantage of providing an effective low cost in manufacturing process for single crystals by using a conventional heat-treatment process without the need of special equipment.Type: ApplicationFiled: June 7, 2002Publication date: January 23, 2003Applicant: CERACOMP CO. LTD.Inventors: Ho-Yong Lee, Jae-Suk Kim, Jong-Bong Lee, Tae-Moo Hur, Doe-Yeon Kim, Nong-Moon Hwang, Byoung-Ki Lee, Sung-Yoon Chung, Suk-Joong L. Kang
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Patent number: 6482259Abstract: The invention relates to a method for growing single crystals of barium titanate [BaTiO3] and barium titanate solid solutions [(BaxM1-x)(TiyN1-y)O3]. This invention is directed to a method for growing single crystals of barium titanate or barium titanate solid solutions showing the primary and secondary abnormal grain growths with increasing temperature higher than the liquid formation temperature, characterized by comprising the step for a few secondary abnormal grains to continue to grow at a temperature slightly below the critical temperature where the secondary abnormal grain growth starts to occur. The method for growing single crystals of barium titanate or barium titanate solid solutions according to this invention has an advantage to provide an effective low cost in manufacturing process for single crystals by using usual heat-treatment process without special equipments.Type: GrantFiled: February 20, 2001Date of Patent: November 19, 2002Assignee: Ceracomp Co., Ltd.Inventors: Ho-Yong Lee, Jae-Suk Kim, Jong-Hong Lee, Tae-Moo Hur, Doe-Yeon Kim, Nong-Moon Hwang, Byoung-Ki Lee, Sung-Yoon Chung, Suk-Joong L. Kang
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Patent number: 6358464Abstract: A method for making a BaTiO3-based dielectric having a high dielectric constant and a low dielectric loss wherein, a BaTiO3-based body is subjected to a pre-heat treatment in a hydrogen (H2) atmosphere or a reducing atmosphere containing mixed gas of hydrogen and nitrogen in a ratio of hydrogen:nitrogen=5 to 100%:0 to 95% prior to a sintering process in the manufacture of dielectrics, in order to obtain a reduced average grain size of BaTiO3. By virtue of the reducing average grain size of BaTiO3, a BaTiO3-based dielectric having a high dielectric constant and a low dielectric loss is obtained.Type: GrantFiled: October 23, 2000Date of Patent: March 19, 2002Assignee: Korea Advanced Institute of Science and TechnologyInventors: Byung Kee Lee, Yang Il Jung, Ho Yong Lee, Suk-Joong Kang, Sung Yoon Chung
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Patent number: 6048394Abstract: A method is disclosed for forming a single crystal relaxor based material, including the following steps: providing a seed single crystal plate, providing a first and second polycrystalline structure, bonding the top surface of the seed crystal plate to the outer surface of the first polycrystalline structure, bonding the bottom surface of the seed crystal plate to the outer surface of the second polycrystalline structure, and annealing the bonded structure.Type: GrantFiled: August 14, 1998Date of Patent: April 11, 2000Assignee: Competitive Technologies of PA, Inc.Inventors: Martin P. Harmer, Helen M. Chan, Ho-Yong Lee, Adam M. Scotch, Tao Li, Frank Meschke, Ajmal Khan