Abstract: In a method of depositing a titanium oxide layer on a substrate, a substrate is placed on a support in a process zone of a sputtering chamber. A target containing titanium faces the substrate. A sputtering gas containing an oxygen-containing gas, such as oxygen, and a non-reactive gas, such as argon, is introduced into the process zone. A pulsed DC voltage is applied to the target to sputter titanium from the target. The sputtered titanium combines with oxygen from the oxygen-containing gas to form a titanium oxide layer on the substrate. A multiple layer titanium oxide deposition process may also be implemented.

Abstract: In a method of depositing a titanium oxide layer on a substrate, a substrate is placed on a support in a process zone of a sputtering chamber. A target containing titanium faces the substrate. A sputtering gas containing an oxygen-containing gas, such as oxygen, and a non-reactive gas, such as argon, is introduced into the process zone. A pulsed DC voltage is applied to the target to sputter titanium from the target. The sputtered titanium combines with oxygen from the oxygen-containing gas to form a titanium oxide layer on the substrate. A multiple layer titanium oxide deposition process may also be implemented.

Abstract: The improved material deposition process of the present invention utilizes a first, low temperature deposition step followed by a second, high temperature/high power deposition step. In the first deposition step a collimation plate is placed between the sputtering target and the substrate, such that a collimated stream of sputtered material is deposited upon the substrate. The collimated stream provides a seed layer which aids in eliminating voids by partially filling the holes and grooves in the surface of the substrate. The second deposition step is conducted as a high temperature sputtering deposition. At the high temperature the sputtered material joins and flows with the seed layer, whereby the holes and grooves are more easily filled without voids and an improved planarized layer is achieved.