Abstract: A multilayer electronic component includes a body including a capacitance formation portion including dielectric layers and internal electrodes alternately disposed in a first direction, and a cover portion disposed on both end surfaces of the capacitance formation portion, facing each other in the first direction, and having a first surface and a second surface opposing each other in the first direction, a third surface and a fourth surface connected to the first and second surfaces and opposing each other in a second direction, and a fifth surface and a sixth surface connected to the first to fourth surfaces and opposing each other in a third direction, and external electrodes disposed on the third and fourth surfaces. The internal electrodes and the dielectric layers protrude more outwardly than the cover portion in the second direction, and a groove is disposed at an end of the dielectric layer in the second direction.

Abstract: A capacitor component includes a body, including a dielectric layer and an internal electrode layer, and an external electrode disposed on the body and connected to the internal electrode layer. At least one hole is formed in the internal electrode layer, and a region, containing at least one selected from the group consisting of indium (In) and tin (Sn), is disposed in the hole. A method of manufacturing a capacitor component includes forming a dielectric green sheet, forming a conductive thin film, including a first conductive material and a second conductive material, on the dielectric green sheet, and sintering the conductive thin film to form an internal electrode layer. The internal electrode layer includes the first conductive material, and a region, including the second conductive material, is formed in the internal electrode layer.

Abstract: A novel compound having excellent light emission and heat stability is disclosed. Also disclosed is an organic electroluminescent device having properties such as light emitting efficiency, an operation voltage, and a service life improved by including the compound in at least one organic layer of the device.

Abstract: An embodiment provides a semiconductor device including a light-emitting structure including a plurality of light-emitting portions disposed at a side and a plurality of second light-emitting portions disposed at another side, a plurality of first connection electrodes configured to electrically connect the plurality of first light-emitting portions, a plurality of second connection electrodes configured to electrically connect the plurality of second light-emitting portions, a first pad disposed on the plurality of first light-emitting portions, and a second pad disposed on the plurality of second light-emitting portions. The first pad includes a plurality of 1-2 pads extending toward the second pad. The second pad includes a plurality of 2-2 pads extending toward the first pad. The first connection electrode includes a region between the plurality of 1-2 pads in a thickness direction of the light-emitting structure.

Abstract: An embodiment provides a semiconductor device including a light-emitting structure including a plurality of light-emitting portions disposed at a side and a plurality of second light-emitting portions disposed at another side, a plurality of first connection electrodes configured to electrically connect the plurality of first light-emitting portions, a plurality of second connection electrodes configured to electrically connect the plurality of second light-emitting portions, a first pad disposed on the plurality of first light-emitting portions, and a second pad disposed on the plurality of second light-emitting portions. The first pad includes a plurality of 1-2 pads extending toward the second pad. The second pad includes a plurality of 2-2 pads extending toward the first pad. The first connection electrode includes a region between the plurality of 1-2 pads in a thickness direction of the light-emitting structure.

Abstract: One embodiment relates to a light emitting device which is free from electrostatic discharge by using an electrostatic discharge suppressing pattern including a resin having particles conductive and dispersed therein, the light emitting device comprising: a light emitting structure including a first conductive semiconductor layer, an active layer, and a second conductive semiconductor layer; a first electrode connected with the first conductive semiconductor layer; a second electrode connected with the second conductive semiconductor layer; and an electrostatic discharge suppressing pattern, which is overlapped with the first electrode and the second electrode, and of which first particles are dispersed in the resin so as to cover a gap between the first electrode and the second electrode.

Abstract: A light-emitting device in an embodiment includes a substrate, a light-emitting structure which is disposed on the substrate and includes a first conductive semiconductor layer, an active layer, and a second conductive semiconductor layer, first and second electrodes which are respectively connected to the first and second conductive semiconductor layers, first and second bonding pads respectively connected to the first and second electrodes, and an insulating layer disposed between the first bonding pad and the second electrode, and between the second bonding pad and the first electrode. The first thickness of the first electrode may be ? or less of the second thickness of the insulating layer disposed between the second bonding pad and the first electrode.

Abstract: A light emitting device package, according to an embodiment, includes: a substrate; a light emitting structure that is disposed below the substrate and includes a first conductive type semiconductor layer, an active layer, and a second conductive type semiconductor layer; a first bonding pad connected with the first conductive type semiconductor layer while being embedded in a through-hole exposed the first conductive type semiconductor layer by passing through the active layer and the second conductive type semiconductor layer; a second bonding pad that is disposed below the second conductive type semiconductor layer while being spaced apart from the first bonding pad and is connected with the second conductive type semiconductor layer; a first insulation layer disposed on the lateral portion of the light emitting structure in the through-hole and on the lower inner edge of the light emitting structure; and a second insulation layer disposed between the first insulation layer and the first bonding pad in the

Abstract: One embodiment relates to a light emitting device which is free from electrostatic discharge by using an electrostatic discharge suppressing pattern including a resin having particles conductive and dispersed therein, the light emitting device comprising: a light emitting structure including a first conductive semiconductor layer, an active layer, and a second conductive semiconductor layer; a first electrode connected with the first conductive semiconductor layer; a second electrode connected with the second conductive semiconductor layer; and an electrostatic discharge suppressing pattern, which is overlapped with the first electrode and the second electrode, and of which first particles are dispersed in the resin so as to cover a gap between the first electrode and the second electrode.

Abstract: A light-emitting device in an embodiment includes a substrate, a light-emitting structure which is disposed on the substrate and includes a first conductive semiconductor layer, an active layer, and a second conductive semiconductor layer, first and second electrodes which are respectively connected to the first and second conductive semiconductor layers, first and second bonding pads respectively connected to the first and second electrodes, and an insulating layer disposed between the first bonding pad and the second electrode, and between the second bonding pad and the first electrode. The first thickness of the first electrode may be ? or less of the second thickness of the insulating layer disposed between the second bonding pad and the first electrode.

Abstract: A light emitting device package, according to an embodiment, includes: a substrate; a light emitting structure that is disposed below the substrate and includes a first conductive type semiconductor layer, an active layer, and a second conductive type semiconductor layer; a first bonding pad connected with the first conductive type semiconductor layer while being embedded in a through-hole exposed the first conductive type semiconductor layer by passing through the active layer and the second conductive type semiconductor layer; a second bonding pad that is disposed below the second conductive type semiconductor layer while being spaced apart from the first bonding pad and is connected with the second conductive type semiconductor layer; a first insulation layer disposed on the lateral portion of the light emitting structure in the through-hole and on the lower inner edge of the light emitting structure; and a second insulation layer disposed between the first insulation layer and the first bonding pad in the