Abstract: A method for self-calibration of reference voltage drop in a Digital to Analog Converter (DAC) includes measuring each one of a plurality of thermometric weightages associated with a respective one of a plurality of thermometric bits, wherein the DAC includes a plurality of sub-binary bits and the plurality of thermometric bits. For each sequentially increasing combination of thermometric bit settings including at least two thermometric bits coupled to a high reference voltage and each sub-binary bit coupled to a low reference voltage, performing the steps of: determining a respective combined weightage correction; adding the combined weightage correction to the highest order bit of the combination of thermometric bit settings; and incrementing a number of bits of the combination of thermometric bit settings in response to the number of bits of the sequential combination being less than a total number of the plurality of thermometric bits.

Abstract: A method for self-calibration of reference voltage drop in a Digital to Analog Converter (DAC) includes measuring each one of a plurality of thermometric weightages associated with a respective one of a plurality of thermometric bits, wherein the DAC includes a plurality of sub-binary bits and the plurality of thermometric bits. For each sequentially increasing combination of thermometric bit settings including at least two thermometric bits coupled to a high reference voltage and each sub-binary bit coupled to a low reference voltage, performing the steps of: determining a respective combined weightage correction; adding the combined weightage correction to the highest order bit of the combination of thermometric bit settings; and incrementing a number of bits of the combination of thermometric bit settings in response to the number of bits of the sequential combination being less than a total number of the plurality of thermometric bits.

Abstract: A Ga2O3-based semiconductor device includes a Ga2O3-based crystal layer including a donor, and an N-doped region formed in at least a part of the Ga2O3-based crystal layer.

Abstract: One example discloses a reconfigurable analog to digital converter (ADC) device, including: an analog front end (AFE) configured to receive a set of analog input signals and generate a corresponding set of digital output signals; wherein the AFE includes a set of reconfigurable ADC conversion circuits; and a sequencer coupled to the AFE and configured to control the set of reconfigurable ADC conversion circuits with a first AFE channel configuration at a first time and a second AFE channel configuration at a second time.

Abstract: A sensor for realizing double-sided directional weighted and quantified wet state detection is disclosed, it includes a sensing strip, the sensing strip includes an upper sensing surface and a lower sensing surface, which can respectively realize a quantitative wet state detection on the upper and lower surfaces, the wet state of the upper and lower sides can be weighted and output according to a preset specific gravity, thereby providing a weighted and quantified wet state information related to a specific layer and a specific direction of a specific detection object. A manufacturing method for producing the sensor for realizing double-sided directional weighted and quantified wet state detection, a disposable smart absorbent article that can provide double-sided directional weighted and quantified wet state information, and a manufacturing method of a disposable smart absorbent article that can provide double-sided directional weighted and quantified wet state information are also disclosed.

Abstract: A method and computer-readable medium for carrying out a promotional campaign, comprising: identifying at least one influencer of at least one target of the promotional campaign; identifying at least one indicator of association between the influencer and a brand associated with the promotional campaign; and releasing towards the target a data element derived from the indicator of association.

Abstract: One example discloses a reconfigurable analog to digital converter (ADC) device, including: an analog front end (AFE) configured to receive a set of analog input signals and generate a corresponding set of digital output signals; wherein the AFE includes a set of reconfigurable ADC conversion circuits; and a sequencer coupled to the AFE and configured to control the set of reconfigurable ADC conversion circuits with a first AFE channel configuration at a first time and a second AFE channel configuration at a second time.

Abstract: A semiconductor element includes a high-resistivity substrate that includes a ?-Ga2O3-based single crystal including an acceptor impurity, a buffer layer on the high-resistivity substrate, the buffer layer including a ?-Ga2O3-based single crystal, and a channel layer on the buffer layer, the channel layer including a ?-Ga2O3-based single crystal including a donor impurity. A crystalline laminate structure includes a high-resistivity substrate that includes a ?-Ga2O3-based single crystal including an acceptor impurity, a buffer layer on the high-resistivity substrate, the buffer layer including a ?-Ga2O3-based single crystal, and a donor impurity-containing layer on the buffer layer, the donor impurity-containing layer including a ?-Ga2O3-based single crystal including a donor impurity.

Abstract: A dispenser for simultaneously dispensing water and fertiliser comprising: a chamber having a chamber wall which is at least partially water permeable; a fertiliser supply line having a fertiliser supply line wall; a water supply line having a water supply line wall, the water supply line wall having at least one aperture extending through the wall; the water supply line and the fertiliser supply line being arranged within the chamber; and at least one dispensing head comprising one or more outlets; wherein the at least one dispensing head extends through the fertiliser supply line wall and the water permeable wall of the chamber.

Abstract: A Ga2O3-based semiconductor device includes a Ga2O3-based crystal layer including a donor, and an N-doped region formed in at least a part of the Ga2O3-based crystal layer.

Abstract: Apparatus and methods for optical emission detection comprising scintillating proximal sensors.

Abstract: Apparatus and methods for depth-of-interaction (DOI) positron tomography detection are disclosed herein. Certain embodiments utilize dichotomous sensing to obtain DOI information.

Abstract: A method and system for conducting interactive classroom learning that can utilize a plurality of electronic audio and video equipment, mobile computing devices, and processing servers, interconnected via a first network infrastructure in a classroom or presentation hall to deliver seamlessly interactive multimedia contents to each of one or more participants in classroom or presentation hall; wherein the participants comprises one or more lecturers or presenters, and one or more students or audiences.

Abstract: A dispenser for simultaneously dispensing water and fertiliser comprising: a chamber having a chamber wall which is at least partially water permeable; a fertiliser supply line having a fertiliser supply line wall; a water supply line having a water supply line wall, the water supply line wall having at least one aperture extending through the wall; the water supply line and the fertiliser supply line being arranged within the chamber; and at least one dispensing head comprising one or more outlets; wherein the at least one dispensing head extends through the fertiliser supply line wall and the water permeable wall of the chamber.

Abstract: Apparatus and methods for optical emission detection comprising scintillating proximal sensors.

Abstract: Apparatus and methods for depth-of-interaction (DOI) positron tomography detection are disclosed herein. Certain embodiments utilize dichotomous sensing to obtain DOI information.

Abstract: The present application relates to an electronic wetness-sensing absorbent article and related methods. The electronic wetness-sensing absorbent article includes a flexible waterproof thin film; at least two mutually separated and insulated flexible electrodes disposed on one surface of the flexible waterproof thin film; a water-permeable braided fabric layer; and an absorbent layer disposed on the other surface of the flexible waterproof thin film, located between the flexible waterproof thin film and the water-permeable braided fabric layer, and adapted to absorb a liquid entering from the water-permeable braided fabric layer. The flexible waterproof thin film, the flexible electrodes, and the liquid contained in the absorbent layer form a non-polar variable electrolytic capacitor. The wetness state of the electronic wetness-sensing absorbent article is obtained by detecting the capacitance value of the variable electrolytic capacitor and change thereof.

Abstract: A semiconductor element includes a high-resistivity substrate that includes a ?-Ga2O3-based single crystal including an acceptor impurity, an undoped ?-Ga2O3-based single crystal layer formed on the high-resistivity substrate, and an n-type channel layer that includes a side surface surrounded by the undoped ?-Ga2O3-based single crystal layer. The undoped ?-Ga2O3-based single crystal layer includes an element isolation region.

Abstract: A semiconductor element includes a high-resistivity substrate that includes a ?-Ga2O3-based single crystal including an acceptor impurity, a buffer layer on the high-resistivity substrate, the buffer layer including a ?-Ga2O3-based single crystal, and a channel layer on the buffer layer, the channel layer including a ?-Ga2O3-based single crystal including a donor impurity. A crystalline laminate structure includes a high-resistivity substrate that includes a ?-Ga2O3-based single crystal including an acceptor impurity, a buffer layer on the high-resistivity substrate, the buffer layer including a ?-Ga2O3-based single crystal, and a donor impurity-containing layer on the buffer layer, the donor impurity-containing layer including a ?-Ga2O3-based single crystal including a donor impurity.