Abstract: Pressure sensors and associated structures that may have reduced light sensitivity. An example may provide structures reducing light at a component on a membrane of a pressure sensor.

Abstract: Pressure sensors that may be used in flowrate monitoring or measuring systems, where the pressure sensors may enable simple, low-cost designs that are readily implemented. One example may provide a pressure sensor having a built-in flow path with a dimensional variation. Pressures of a fluid on each side of the dimensional variation may be compared to each other. The measured differential pressure may then be converted to a flowrate through the flow path.

Abstract: Pressure sensors and associated structures that may facilitate the use of automated connection processes and tools. An example may provide structures for aligning interconnect wires to pressure sensor bondpads in order to facilitate the use of automated processes and tools.

Abstract: Pressure sensors that may be used in flowrate monitoring or measuring systems, where the pressure sensors may enable simple, low-cost designs that are readily implemented. One example may provide a pressure sensor having a built-in flow path with a dimensional variation. Pressures of a fluid on each side of the dimensional variation may be compared to each other. The measured differential pressure may then be converted to a flowrate through the flow path.

Abstract: Pressure sensors and their methods of manufacturing, where the pressure sensors have a small, thin form factor and may include features designed to improve manufacturability and where the method of manufacturing may improve yield and reduce overall costs.

Abstract: Pressure sensors and associated structures that may have reduced light sensitivity. An example may provide structures reducing light at a component on a membrane of a pressure sensor.

Abstract: Pressure sensors having vertical diaphragms or membranes. A vertical diaphragm may be located in a first silicon wafer between a first and second cavity, where the first and second cavities are covered by a second silicon wafer. One or more active or passive devices or components may be located on a top of the vertical diaphragm.

Abstract: Pressure sensors and associated structures that may facilitate the use of automated connection processes and tools. An example may provide structures for aligning interconnect wires to pressure sensor bondpads in order to facilitate the use of automated processes and tools.

Abstract: Pressure sensors and their methods of manufacturing, where the pressure sensors have a small, thin form factor and may include features designed to improve manufacturability and where the method of manufacturing may improve yield and reduce overall costs.

Abstract: Pressure sensors having vertical diaphragms or membranes. A vertical diaphragm may be located in a first silicon wafer between a first and second cavity, where the first and second cavities are covered by a second silicon wafer. One or more active or passive devices or components may be located on a top of the vertical diaphragm.

Abstract: Circuits, methods, and apparatus that provide pressure sensing devices having a pressure sensor including a diaphragm supported by a frame. The pressure sensor may be mounted on an application-specific integrated circuit. A passage may extend through the application-specific integrated circuit from its underside to its topside where it may terminate in a cavity formed under the diaphragm. Circuit components may be formed in the second wafer portion and located in areas that are not under the first wafer portion. Circuit components may be formed in the second wafer in areas under the first wafer portion, such as under the frame or under the diaphragm. Circuit components may be formed in the second wafer such that they are partially under the first wafer portion, or partially under the frame or partially under the diaphragm.

Abstract: Circuits, methods, and apparatus that provide pressure sensor devices where pressure sensors may be reliably attached to surfaces in device packages, and where the coefficients of expansion of the pressure sensor and the surface are at least approximately equal. Examples may provide pressure sensor devices where pressure sensors may be reliably attached to surfaces in device packages by providing interposers formed to prevent adhesives used to attach the pressure sensors to surfaces from blocking or encroaching into pressure sensor openings or cavities. These same features may be used to accurately locate a pressure sensor relative to the interposer. Embodiments of the present invention may provide pressure sensor devices where the coefficients of expansion of the pressure sensor and the surface are at least approximately equal by proving interposers that are formed of the same or similar material as the pressure sensors, such as silicon.

Abstract: Pressure sensors having a topside boss and a cavity formed using deep reactive-ion etching (DRIE) or plasma etching. Since the boss is formed on the topside, the boss is aligned to other features on the topside of the pressure sensor, such as a Wheatstone bridge or other circuit elements. Also, since the boss is formed as part of the diaphragm, the boss has a reduced mass and is less susceptible to the effects of gravity and acceleration. These pressure sensors may also have a cavity formed using a DRIE or plasma etch. Use of these etches result in a cavity having edges that are substantially orthogonal to the diaphragm, such that pressure sensor die area is reduced. The use of these etches also permits the use of p-doped wafers, which are compatible with conventional CMOS technologies.

Abstract: Pressure sensors having a topside boss and a cavity formed using deep reactive-ion etching (DRIE) or plasma etching. Since the boss is formed on the topside, the boss is aligned to other features on the topside of the pressure sensor, such as a Wheatstone bridge or other circuit elements. Also, since the boss is formed as part of the diaphragm, the boss has a reduced mass and is less susceptible to the effects of gravity and acceleration. These pressure sensors may also have a cavity formed using a DRIE or plasma etch. Use of these etches result in a cavity having edges that are substantially orthogonal to the diaphragm, such that pressure sensor die area is reduced. The use of these etches also permits the use of p-doped wafers, which are compatible with conventional CMOS technologies.