Abstract: An apparatus includes a substrate and a heat source structure connected to the substrate and configured to provide a heat quantity. Furthermore, a porous body including connected particles is provided, wherein gaps between the particles form fluidically connected cavities. The porous body is configured to at least partially receive the heat quantity of the heat source structure.

Abstract: An electronic component comprises a first layer and a second layer, wherein a main surface of the first layer is arranged opposite a main surface of the second layer. The first layer comprises a polarized first material. A polarization of the first material faces in a first direction. The second layer comprises a polarized second material having at least one polarization state, wherein a direction of a polarization of the second material at least in the one polarization state of the second material is at least in part opposite to the first direction such that a charge zone forms along the main surface of the first and/or the second layer, said charge zone being electrically conductive at least when the second material is in the one polarization state.

Abstract: A transistor having high electron mobility (HEMT) having a first layer and a second layer is described. The first layer has a first material made of a first nitride compound. The first nitride compound has a group III element. The second layer has a second material made of a second nitride compound. The second nitride compound has a group III element. A main surface of the second layer is arranged opposite a main surface of the first layer, such that a charge zone forms along the main surface of the second layer. The HEMT further has a gate electrode, which is arranged opposite the second layer, at least in regions, such that the second layer is arranged between the first layer and the gate electrode. Furthermore, the HEMT has a third layer, which is arranged between the gate electrode and the second layer. The third layer has a ferroelectric third material made of a third nitride compound, or a ferroelectric third material made of an oxide compound which contains zinc.

Abstract: An apparatus for controlling a switching DC-DC converter with a first half-bridge circuit including a first switch and a second switch, with a second half-bridge circuit including a third switch and a fourth switch and with an inductance connected between the center taps of the first and the second half-bridge circuit includes, according to embodiments, a control unit that is configured to adapt, in dependence on an input voltage and an output voltage at the switching DC-DC converter, a switching frequency of the switches of the DC-DC converter, the duty cycles of the first and fourth switch and the time delay between switching on the first and the fourth switch. The control unit is configured to determine the switching frequency, the first duty cycle, the second duty cycle and the time delay based on an output current of the switching DC-DC converter.

Abstract: An apparatus for controlling a switching DC-DC converter with a first half-bridge circuit including a first switch and a second switch, with a second half-bridge circuit including a third switch and a fourth switch and with an inductance connected between the center taps of the first and the second half-bridge circuit includes, according to embodiments, a control unit that is configured to adapt, in dependence on an input voltage and an output voltage at the switching DC-DC converter, a switching frequency of the switches of the DC-DC converter, the duty cycles of the first and fourth switch and the time delay between switching on the first and the fourth switch. The control unit is configured to determine the switching frequency, the first duty cycle, the second duty cycle and the time delay based on an output current of the switching DC-DC converter.

Abstract: Embodiments of the present invention provide a DC-DC converter having a first DC voltage gate, a second DC voltage gate and a storage choke. The storage choke is coupled between the first DC voltage gate and the second DC voltage gate by means of electric switching elements. The DC-DC converter is configured such that a direction of a current flow through the storage choke is inverted at least once during a switching period of the electric switching elements. Further, the DC-DC converter is configured to track or readjust a switching frequency of the electric switching elements in case of a change of operating parameters of the DC-DC converter such that a change of direction of the current flow through the storage choke during a switching period of the electric switching elements is ensured.

Abstract: Embodiments of the present invention provide a DC-DC converter having a first DC voltage gate, a second DC voltage gate and a storage choke. The storage choke is coupled between the first DC voltage gate and the second DC voltage gate by means of electric switching elements. The DC-DC converter is configured such that a direction of a current flow through the storage choke is inverted at least once during a switching period of the electric switching elements. Further, the DC-DC converter is configured to track or readjust a switching frequency of the electric switching elements in case of a change of operating parameters of the DC-DC converter such that a change of direction of the current flow through the storage choke during a switching period of the electric switching elements is ensured.

Abstract: A semiconductor device has a cell field with drift zones of a first type of conductivity and charge carrier compensation zones of a second type of conductivity complementary to the first type. An edge region which surrounds the cell field has a higher blocking strength than the cell field, the edge region having a near-surface area which is undoped to more weakly doped than the drift zones, and beneath the near-surface area at least one buried, vertically extending complementarily doped zone is positioned.

Abstract: An integrated circuit and component is disclosed. In one embodiment, the component is a compensation component, configuring the compensation regions in the drift zone in V-shaped fashion in order to achieve a convergence of the space charge zones from the upper to the lower end of the compensation regions is disclosed.

Abstract: A semiconductor device has a cell field with drift zones of a first type of conductivity and charge carrier compensation zones of a second type of conductivity complementary to the first type. An edge region which surrounds the cell field has a higher blocking strength than the cell field, the edge region having a near-surface area which is undoped to more weakly doped than the drift zones, and beneath the near-surface area at least one buried, vertically extending complementarily doped zone is positioned.

Abstract: A semiconductor device has a cell field with drift zones of a first type of conductivity and charge carrier compensation zones of a second type of conductivity complementary to the first type. An edge region which surrounds the cell field has a higher blocking strength than the cell field, the edge region having a near-surface area which is undoped to more weakly doped than the drift zones, and beneath the near-surface area at least one buried, vertically extending complementarily doped zone is positioned.

Abstract: An integrated circuit and component is disclosed. In one embodiment, the component is a compensation component, configuring the compensation regions in the drift zone in V-shaped fashion in order to achieve a convergence of the space charge zones from the upper to the lower end of the compensation regions is disclosed.

Abstract: An integrated circuit and component is disclosed. In one embodiment, the component is a compensation component, configuring the compensation regions in the drift zone in V-shaped fashion in order to achieve a convergence of the space charge zones from the upper to the lower end of the compensation regions is disclosed.

Abstract: An integrated circuit and component is disclosed. In one embodiment, the component is a compensation component, configuring the compensation regions in the drift zone in V-shaped fashion in order to achieve a convergence of the space charge zones from the upper to the lower end of the compensation regions is disclosed.

Abstract: An integrated circuit and component is disclosed. In one embodiment, the component is a compensation component, configuring the compensation regions in the drift zone in V-shaped fashion in order to achieve a convergence of the space charge zones from the upper to the lower end of the compensation regions is disclosed.

Abstract: A system and method for controlling a converter. One embodiment provides the cyclic actuation of a first switching element, used for applying an input voltage to an inductive storage element. A second switching element is used as a first rectifier element in a rectifier arrangement, in a step-up converter. An actuating circuit is provided for the first and second switching elements.

Abstract: A semiconductor device with inherent capacitances and method for its production. The semiconductor device has an inherent feedback capacitance between a control electrode and a first electrode. In addition, the semiconductor device has an inherent drain-source capacitance between the first electrode and a second electrode. At least one monolithically integrated additional capacitance is connected in parallel to the inherent feedback capacitance or in parallel to the inherent drain-source capacitance. The additional capacitance comprises a first capacitor surface and a second capacitor surface opposite the first capacitor surface. The capacitor surfaces are structured conductive layers of the semiconductor device on a front side of the semiconductor body, between which a dielectric layer is located and which form at least one additional capacitor.

Abstract: A semiconductor device with a charge carrier compensation structure. In one embodiment, the semiconductor device has a central cell field with a gate and source structure. At least one bond contact area is electrically coupled to the gate structure or the source structure. A capacitance-increasing field plate is electrically coupled to at least one of the near-surface bond contact areas.

Abstract: A system and method for controlling a converter. One embodiment provides the cyclic actuation of a first switching element, used for applying an input voltage to an inductive storage element. A second switching element is used as a first rectifier element in a rectifier arrangement, in a step-up converter. An actuating circuit is provided for the first and second switching elements.

Abstract: A switching converter including a rectifier element with nonlinear capacitance. One embodiment provides a switching element configured to be driven in the on state and in the off state. A first capacitive element is between the load path terminals of the switching element and has a nonlinear capacitance characteristic curve dependent on a voltage between the load path connections. A rectifier element is coupled between the inductive storage element and the capacitive storage element such that it enables a current flow between the inductive storage element and the capacitive storage element when the switching element is driven in the off state. A second capacitive element is between the load path terminals of the rectifier element and has a nonlinear capacitance characteristic curve dependent on a voltage between the load path connections.