Abstract: A method for cutting up a workpiece which is in rod or block form by means of a saw, wherein the temperature of the workpiece is measured during the cutting, and the measurement signal is transmitted to a control unit, which generates a control signal which is used to control the temperature of the workpiece, or wherein the temperature of the workpiece is controlled during the cutting by a control signal based on a predetermined control curve.

Abstract: A method for cutting up a workpiece which is in rod or block form by means of a saw, wherein the temperature of the workpiece is measured during the cutting, and the measurement signal is transmitted to a control unit, which generates a control signal which is used to control the temperature of the workpiece, or wherein the temperature of the workpiece is controlled during the cutting by a control signal based on a predetermined control curve.

Abstract: The nondestructive detection and characterization of crystal defects in monocrystalline semiconductor material is by a combination of photoluminescence heterodyne spectroscopy, photothermal heterodyne spectroscopy and SIRD.

Abstract: A method is for simultaneously cutting off a multiplicity of wafers from a hard, brittle workpiece which has a longitudinal axis and a peripheral surface. The workpiece is guided, by means of a translational relative movement, directed perpendicular to the longitudinal axis, between the workpiece and a wire web of a wire saw with the aid of a feed device, through the wire web which is formed by a sawing wire. The workpiece is rotated about the longitudinal axis while the wafers are being cut off. There is also a wire saw which is suitable for carrying out the method and has a device for holding and for rotating the workpiece about the longitudinal axis.

Abstract: A process and a device will produce a cylindrical single crystal of semicuctor material with the smallest possible alignment error of the crystal lattice. A process for cutting semiconductor wafers from two or more such single crystals is by means of wire sawing. The process for producing the single crystal is as follows: (a) a single crystal with an alignment error of the crystal lattice equal to at most 1.5.degree.

Abstract: Material removing machining is for wafer shaped workpieces, in particular semiconductor wafers. There is a method for achieving a wear performance which is as linear as possible for a tool which has an essentially planar working surface for the material removing machining of wafer shaped workpieces. The tool has a wear performance which is as linear as possible. There are also a method and a device for measuring a wear profile on an essentially planar working surface for the material removing machining of wafer shaped workpieces. There is also a carrier which is used for the two-sided material removing machining of wafer shaped workpieces.

Abstract: A method and an apparatus are for machining semiconductor material with a inding tool while feeding a liquid cleaning agent to the working surface of the grinding tool, has the cleaning agent being exposed to sound waves having a specific frequency and having a specific intensity. In one embodiment of the method, the cleaning agent is exposed to sound waves in at least one nozzle and then the cleaning agent is directed against the working surface of the grinding tool. In another embodiment, the cleaning agent is guided through at least two cleaning agent jets against the working surface of the grinding tool, which cleaning agent jets differ from each other in that they are exposed to sound waves of different frequencies.