Patents by Inventor Holger Schulze
Holger Schulze has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20150130013Abstract: A semiconductor device includes at least one ohmic contact region between a semiconductor substrate of the semiconductor device and an electrically conductive structure arranged adjacent to the semiconductor substrate. Further, the semiconductor device includes at least one Schottky contact region between the semiconductor substrate of the semiconductor device and the electrically conductive structure. The at least one ohmic contact region is arranged adjacent to the at least one Schottky contact region. The semiconductor substrate includes a first doping layer arranged adjacent to the electrically conductive structure. An average doping concentration of the surface region of the first doping layer in an area of the at least one ohmic contact region differs from an average doping concentration of the surface region of the first doping layer in an area of the at least one Schottky contact region by less than 10%.Type: ApplicationFiled: November 14, 2013Publication date: May 14, 2015Applicant: Infineon Technologies AGInventors: Holger Hüsken, Anton Mauder, Hans-Joachim Schulze, Wolfgang Rösner, Holger Schulze
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Publication number: 20150097262Abstract: A semiconductor diode includes a semiconductor body and trench structures extending from a surface of the semiconductor body into the semiconductor body. The semiconductor body includes a doped layer of a first conductivity type and a doped zone of a second conductivity type opposite to the first conductivity type. The doped zone is formed between the doped layer and a first surface of the semiconductor body. The trench structures are arranged between electrically connected portions of the semiconductor body. The trench structures do not include conductive structures that are both electrically insulated from the semiconductor body and electrically connected with another structure outside the trench structures.Type: ApplicationFiled: November 20, 2014Publication date: April 9, 2015Inventors: Anton Mauder, Franz-Josef Niedernostheide, Hans-Joachim Schulze, Holger Schulze
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Publication number: 20150041963Abstract: According to one embodiment of a semiconductor device, the semiconductor device includes a semiconductor substrate having a first surface, an insulation layer having a laterally varying thickness on the first surface, and a metal layer on the first surface. The insulation layer has ripples in its surface facing the metal layer. According to another embodiment of a semiconductor device, the semiconductor device includes a semiconductor substrate having a first surface and including at least one of a laterally varying thickness and an inclined first surface. The first surface of the semiconductor substrate has ripples.Type: ApplicationFiled: October 23, 2014Publication date: February 12, 2015Inventors: Hans-Joachim Schulze, Johannes Laven, Holger Schulze
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Semiconductor device with trench structures including a recombination structure and a fill structure
Patent number: 8921931Abstract: A semiconductor body of a semiconductor device includes a doped layer of a first conductivity type and one or more doped zones of a second conductivity type. The one or more doped zones are formed between the doped layer and the first surface of a semiconductor body. Trench structures extend from one of the first and the second opposing surface into the semiconductor body. The trench structures are arranged between portions of the semiconductor body which are electrically connected to each other. The trench structures may be arranged for mitigating mechanical stress, locally controlling charge carrier mobility, locally controlling a charge carrier recombination rate and/or shaping buried diffusion zones.Type: GrantFiled: June 4, 2012Date of Patent: December 30, 2014Assignee: Infineon Technologies Austria AGInventors: Anton Mauder, Franz-Josef Niedernostheide, Hans-Joachim Schulze, Holger Schulze -
Patent number: 8895453Abstract: A layer with a laterally varying thickness, a substrate with a first surface and an insulation layer formed on the first surface of the substrate is provided. A plurality of at least one of recesses and openings is formed in the insulation layer, wherein the plurality is arranged at a pitch. Each of the at least one of recesses and openings has a lateral width, wherein at least one of the pitch and the lateral width varies in a lateral direction. The plurality of the at least one of recesses and openings defines a given region in the insulation layer. The insulation layer having the plurality of the at least one of the recesses and openings is tempered at elevated temperatures so that the insulation layer at least partially diffluences to provide the insulation layer with a laterally varying thickness at least in the given region.Type: GrantFiled: April 12, 2013Date of Patent: November 25, 2014Assignee: Infineon Technologies AGInventors: Hans-Joachim Schulze, Johannes Laven, Holger Schulze
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Patent number: 8778157Abstract: Provided is a method for processing a sample, which method comprises: a) contacting a binding phase, which binding phase is capable of binding an analyte, with the sample in the presence of a medium; b) applying across the medium a first alternating field composed of a plurality of pulses and having a first frequency, a first pulse duration and a first pulse rise time; c) optionally applying across the medium a second alternating field; and d) thereby influencing the sample and/or the binding phase in the medium.Type: GrantFiled: March 11, 2009Date of Patent: July 15, 2014Assignee: ITI Scotland LimitedInventors: Holger Schulze, Till Bachmann, Andrew Mount
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Patent number: 8741750Abstract: A method for fabricating a semiconductor body is presented. The semiconductor body includes a p-conducting zone, an n-conducting zone and a pn junction in a depth T1 in the semiconductor body between the p-conducting zone and the n-conducting zone. The method includes providing the semiconductor body, producing the p-doped zone by the diffusion of an impurity that forms an acceptor in a first direction into the semiconductor body, and producing the n-conducting zone by the implantation of protons in the first direction into the semiconductor body into a depth T2>T1 and the subsequent heat treatment of the semiconductor body in order to form hydrogen-induced donors.Type: GrantFiled: September 30, 2009Date of Patent: June 3, 2014Assignee: Infineon Technologies Austria AGInventors: Frank Hille, Franz Josef Niedernostheide, Hans-Joachim Schulze, Holger Schulze
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Publication number: 20140015007Abstract: A semiconductor device includes a cell region having at least one device cell, wherein the at least one device cell includes a first device region of a first conductivity type. The semiconductor device further includes a drift region of a second conductivity type adjoining the first device region of the at least one device cell, a doped region of the first conductivity type adjoining the drift region, and charge carrier lifetime reduction means configured to reduce a charge carrier lifetime in the doped region of the first conductivity type.Type: ApplicationFiled: June 21, 2013Publication date: January 16, 2014Inventors: Dorothea Werber, Frank Pfirsch, Hans-Joachim Schulze, Carsten Schaeffer, Volodymyr Komarnitskyy, Anton Mauder, Holger Schulze, Gerhard Miller
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Publication number: 20130320487Abstract: A semiconductor body of a semiconductor device includes a doped layer of a first conductivity type and one or more doped zones of a second conductivity type. The one or more doped zones are formed between the doped layer and the first surface of a semiconductor body. Trench structures extend from one of the first and the second opposing surface into the semiconductor body. The trench structures are arranged between portions of the semiconductor body which are electrically connected to each other. The trench structures may be arranged for mitigating mechanical stress, locally controlling charge carrier mobility, locally controlling a charge carrier recombination rate and/or shaping buried diffusion zones.Type: ApplicationFiled: June 4, 2012Publication date: December 5, 2013Applicant: INFINEON TECHNOLOGIES AUSTRIA AGInventors: Anton Mauder, Franz-Josef Niedernostheide, Hans-Joachim Schulze, Holger Schulze
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Patent number: 8367532Abstract: A semiconductor device in one embodiment has a first connection region, a second connection region and a semiconductor volume arranged between the first and second connection regions. Provision is made, within the semiconductor volume, in the vicinity of the second connection region, of a field stop zone for spatially delimiting a space charge zone that can be formed in the semiconductor volume, and of an anode region adjoining the first connection region. The dopant concentration profile within the semiconductor volume is configured such that the integral of the ionized dopant charge over the semiconductor volume, proceeding from an interface of the anode region which faces the second connection region, in the direction of the second connection region, reaches a quantity of charge corresponding to the breakdown charge of the semiconductor device only near the interface of the field stop zone which faces the second connection region.Type: GrantFiled: July 26, 2012Date of Patent: February 5, 2013Assignee: Infineon Technologies AGInventors: Anton Mauder, Hans-Joachim Schulze, Frank Hille, Holger Schulze, Manfred Pfaffenlehner, Carsten Schäffer, Franz-Josef Niedernostheide
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Publication number: 20120315747Abstract: A semiconductor device in one embodiment has a first connection region, a second connection region and a semiconductor volume arranged between the first and second connection regions. Provision is made, within the semiconductor volume, in the vicinity of the second connection region, of a field stop zone for spatially delimiting a space charge zone that can be formed in the semiconductor volume, and of an anode region adjoining the first connection region. The dopant concentration profile within the semiconductor volume is configured such that the integral of the ionized dopant charge over the semiconductor volume, proceeding from an interface of the anode region which faces the second connection region, in the direction of the second connection region, reaches a quantity of charge corresponding to the breakdown charge of the semiconductor device only near the interface of the field stop zone which faces the second connection region.Type: ApplicationFiled: July 26, 2012Publication date: December 13, 2012Inventors: Anton MAUDER, Hans-Joachim SCHULZE, Frank HILLE, Holger SCHULZE, Manfred PFAFFENLEHNER, Carsten SCHÄFFER, Franz-Josef NIEDERNOSTHEIDE
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Patent number: 8252671Abstract: A semiconductor device in one embodiment has a first connection region, a second connection region and a semiconductor volume arranged between the first and second connection regions. Provision is made, within the semiconductor volume, in the vicinity of the second connection region, of a field stop zone for spatially delimiting a space charge zone that can be formed in the semiconductor volume, and of an anode region adjoining the first connection region. The dopant concentration profile within the semiconductor volume is configured such that the integral of the ionized dopant charge over the semiconductor volume, proceeding from an interface of the anode region which faces the second connection region, in the direction of the second connection region, reaches a quantity of charge corresponding to the breakdown charge of the semiconductor device only near the interface of the field stop zone which faces the second connection region.Type: GrantFiled: July 20, 2011Date of Patent: August 28, 2012Assignee: Infineon Technologies Austria AGInventors: Anton Mauder, Hans-Joachim Schulze, Frank Hille, Holger Schulze, Manfred Pfaffenlehner, Carsten Schaeffer, Franz-Josef Niedernostheide
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Publication number: 20110275202Abstract: A semiconductor device in one embodiment has a first connection region, a second connection region and a semiconductor volume arranged between the first and second connection regions. Provision is made, within the semiconductor volume, in the vicinity of the second connection region, of a field stop zone for spatially delimiting a space charge zone that can be formed in the semiconductor volume, and of an anode region adjoining the first connection region. The dopant concentration profile within the semiconductor volume is configured such that the integral of the ionized dopant charge over the semiconductor volume, proceeding from an interface of the anode region which faces the second connection region, in the direction of the second connection region, reaches a quantity of charge corresponding to the breakdown charge of the semiconductor device only near the interface of the field stop zone which faces the second connection region.Type: ApplicationFiled: July 20, 2011Publication date: November 10, 2011Inventors: Anton MAUDER, Hans-Joachim Schulze, Frank Hille, Holger Schulze, Manfred Pfaffenlehner, Carsten Schäffer, Franz-Josef Niedernostheide
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Patent number: 8003502Abstract: A semiconductor device in one embodiment has a first connection region, a second connection region and a semiconductor volume arranged between the first and second connection regions. Provision is made, within the semiconductor volume, in the vicinity of the second connection region, of a field stop zone for spatially delimiting a space charge zone that can be formed in the semiconductor volume, and of an anode region adjoining the first connection region. The dopant concentration profile within the semiconductor volume is configured such that the integral of the ionized dopant charge over the semiconductor volume, proceeding from an interface of the anode region which faces the second connection region, in the direction of the second connection region, reaches a quantity of charge corresponding to the breakdown charge of the semiconductor device only near the interface of the field stop zone which faces the second connection region.Type: GrantFiled: April 2, 2009Date of Patent: August 23, 2011Assignee: Infineon Technologies Austria AGInventors: Anton Mauder, Hans-Joachim Schulze, Frank Hille, Holger Schulze, Manfred Pfaffenlehner, Carsten Schaeffer, Franz-Josef Niedernostheide
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Publication number: 20110077166Abstract: Provided is a method of attaching a substance to a surface, which method comprises contacting a surface comprising amine reactive groups with a substance labelled with a peptide tag such that the substance is covalently attached to the surface via the peptide tag, wherein the peptide tag comprises one or more histidine residues, one of which is a terminal histidine residue having a free N-terminal amino group. Also provided is a method of processing or analysis which comprises a method of attaching a substance to a surface as detailed above and comprises one or more further steps of processing or analysing the substance.Type: ApplicationFiled: March 10, 2009Publication date: March 31, 2011Applicant: ITI SCOTLAND LIMITEDInventors: Colin Campbell, Holger Schulze, Till Bachmann
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Publication number: 20110031123Abstract: Provided is a method for processing a sample, which method comprises: a) contacting a binding phase, which binding phase is capable of binding an analyte, with the sample in the presence of a medium; b) applying across the medium a first alternating field composed of a plurality of pulses and having a first frequency, a first pulse duration and a first pulse rise time; c) optionally applying across the medium a second alternating field; and d) thereby influencing the sample and/or the binding phase in the medium.Type: ApplicationFiled: March 11, 2009Publication date: February 10, 2011Applicant: ITI SCOTLAND LIMITEDInventors: Holger Schulze, Till Bachmann, Andrew Mount
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Patent number: 7842590Abstract: A method for manufacturing a semiconductor device by laser annealing. One embodiment provides a semiconductor substrate having a first surface and a second surface. The second surface is arranged opposite to the first surface. A first dopant is introduced into the semiconductor substrate at the second surface such that its peak doping concentration in the semiconductor substrate is located at a first depth with respect to the second surface. A second dopant is introduced into the semiconductor surface at the second surface such that its peak doping concentration in the semiconductor substrate is located at a second depth with respect to the second surface, wherein the first depth is larger than the second depth. At least a first laser anneal is performed by directing at least one laser beam pulse onto the second surface to melt the semiconductor substrate, at least in sections, at the second surface.Type: GrantFiled: April 28, 2008Date of Patent: November 30, 2010Assignee: Infineon Technologies Austria AGInventors: Thomas Gutt, Frank Umbach, Hans Peter Felsl, Manfred Pfaffenlehner, Franz-Josef Niedernostheide, Holger Schulze
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Patent number: 7754590Abstract: Some embodiments of the invention relate to manufacturing a semiconductor device with an implantation layer on a semiconductor substrate including a method of manufacturing such an implantation layer, wherein said implantation layer is formed in an implantation step at a predetermined depth of penetration, determined from a top surface of said semiconductor substrate, using a particle beam, by increasing its path distance to a main implantation peak and correspondingly increasing the energy level of said particle beam for producing an undamaged implantation layer having a thickness that is increased significantly compared with the thickness of an implantation layer that would be produced at said predetermined depth of penetration using a particle beam with non-increased path distance and energy level.Type: GrantFiled: August 30, 2006Date of Patent: July 13, 2010Assignee: Infineon Technologies Austria AGInventors: Hans-Joachim Schulze, Holger Schulze, Andreas Kyek
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Publication number: 20100087053Abstract: A method for fabricating a semiconductor body is presented. The semiconductor body includes a p-conducting zone, an n-conducting zone and a pn junction in a depth T1 in the semiconductor body between the p-conducting zone and the n-conducting zone. The method includes providing the semiconductor body, producing the p-doped zone by the diffusion of an impurity that forms an acceptor in a first direction into the semiconductor body, and producing the n-conducting zone by the implantation of protons in the first direction into the semiconductor body into a depth T2>T1 and the subsequent heat treatment of the semiconductor body in order to form hydrogen-induced donors.Type: ApplicationFiled: September 30, 2009Publication date: April 8, 2010Applicant: INFINEON TECHNOLOGIES AUSTRIA AGInventors: Frank Hille, Franz Josef Niedernostheide, Hans-Joachim Schulze, Holger Schulze
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Publication number: 20090267200Abstract: A method for manufacturing a semiconductor device by laser annealing. One embodiment provides a semiconductor substrate having a first surface and a second surface. The second surface is arranged opposite to the first surface. A first dopant is introduced into the semiconductor substrate at the second surface such that its peak doping concentration in the semiconductor substrate is located at a first depth with respect to the second surface. A second dopant is introduced into the semiconductor surface at the second surface such that its peak doping concentration in the semiconductor substrate is located at a second depth with respect to the second surface, wherein the first depth is larger than the second depth. At least a first laser anneal is performed by directing at least one laser beam pulse onto the second surface to melt the semiconductor substrate, at least in sections, at the second surface.Type: ApplicationFiled: April 28, 2008Publication date: October 29, 2009Applicant: INFINEON TECHNOLOGIES AUSTRIA AGInventors: Thomas Gutt, Frank Umbach, Hans Peter Felsl, Manfred Pfaffenlehner, Franz-Josef Niedernostheide, Holger Schulze