Patents by Inventor Holly Ann Blaydes
Holly Ann Blaydes has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20240154049Abstract: A photovoltaic device is presented. The photovoltaic device includes a layer stack; and an absorber layer is disposed on the layer stack. The absorber layer comprises selenium, wherein an atomic concentration of selenium varies across a thickness of the absorber layer. The photovoltaic device is substantially free of a cadmium sulfide layer.Type: ApplicationFiled: January 12, 2024Publication date: May 9, 2024Applicant: First Solar, Inc.Inventors: Holly Ann Blaydes, Kristian William Andreini, William Hullinger Huber, Eugene Thomas Hinners, Joseph John Shiang, Yong Liang, Jongwoo Choi
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Publication number: 20240055546Abstract: Embodiments of a photovoltaic device are provided herein. The photovoltaic device can include a layer stack and an absorber layer disposed on the layer stack. The absorber layer can include a first region and a second region. Each of the first region of the absorber layer and the second region of the absorber layer can include a compound comprising cadmium, selenium, and tellurium. An atomic concentration of selenium can vary across the absorber layer. The first region of the absorber layer can have a thickness between 100 nanometers to 3000 nanometers. The second region of the absorber layer can have a thickness between 100 nanometers to 3000 nanometers. A ratio of an average atomic concentration of selenium in the first region of the absorber layer to an average atomic concentration of selenium in the second region of the absorber layer can be greater than 10.Type: ApplicationFiled: October 9, 2023Publication date: February 15, 2024Applicant: First Solar, Inc.Inventors: Kristian William Andreini, Holly Ann Blaydes, Jongwoo Choi, Adam Fraser Halverson, Eugene Thomas Hinners, William Hullinger Huber, Yong Liang, Joseph John Shiang
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Patent number: 11876140Abstract: A photovoltaic device is presented. The photovoltaic device includes a layer stack; and an absorber layer is disposed on the layer stack. The absorber layer comprises selenium, wherein an atomic concentration of selenium varies across a thickness of the absorber layer. The photovoltaic device is substantially free of a cadmium sulfide layer.Type: GrantFiled: May 2, 2013Date of Patent: January 16, 2024Assignee: First Solar, Inc.Inventors: Holly Ann Blaydes, Kristian William Andreini, William Hullinger Huber, Eugene Thomas Hinners, Joseph John Shiang, Yong Liang, Jongwoo Choi
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Patent number: 11784278Abstract: Embodiments of a photovoltaic device are provided herein. The photovoltaic device can include a layer stack and an absorber layer disposed on the layer stack. The absorber layer can include a first region and a second region. Each of the first region of the absorber layer and the second region of the absorber layer can include a compound comprising cadmium, selenium, and tellurium. An atomic concentration of selenium can vary across the absorber layer. The first region of the absorber layer can have a thickness between 100 nanometers to 3000 nanometers. The second region of the absorber layer can have a thickness between 100 nanometers to 3000 nanometers. A ratio of an average atomic concentration of selenium in the first region of the absorber layer to an average atomic concentration of selenium in the second region of the absorber layer can be greater than 10.Type: GrantFiled: October 10, 2022Date of Patent: October 10, 2023Assignee: First Solar, Inc.Inventors: Kristian William Andreini, Holly Ann Blaydes, Jongwoo Choi, Adam Fraser Halverson, Eugene Thomas Hinners, William Hullinger Huber, Yong Liang, Joseph John Shiang
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Patent number: 11588069Abstract: Embodiments of a photovoltaic device are provided herein. The photovoltaic device can include a layer stack and an absorber layer disposed on the layer stack. The absorber layer can include a first region and a second region. Each of the first region of the absorber layer and the second region of the absorber layer can include a compound comprising cadmium, selenium, and tellurium. An atomic concentration of selenium can vary across the absorber layer. The first region of the absorber layer can have a thickness between 100 nanometers to 3000 nanometers. The second region of the absorber layer can have a thickness between 100 nanometers to 3000 nanometers. A ratio of an average atomic concentration of selenium in the first region of the absorber layer to an average atomic concentration of selenium in the second region of the absorber layer can be greater than 10.Type: GrantFiled: September 3, 2021Date of Patent: February 21, 2023Assignee: First Solar, Inc.Inventors: Kristian William Andreini, Holly Ann Blaydes, Jongwoo Choi, Adam Fraser Halverson, Eugene Thomas Hinners, William Hullinger Huber, Yong Liang, Joseph John Shiang
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Publication number: 20230045333Abstract: Embodiments of a photovoltaic device are provided herein. The photovoltaic device can include a layer stack and an absorber layer disposed on the layer stack. The absorber layer can include a first region and a second region. Each of the first region of the absorber layer and the second region of the absorber layer can include a compound comprising cadmium, selenium, and tellurium. An atomic concentration of selenium can vary across the absorber layer. The first region of the absorber layer can have a thickness between 100 nanometers to 3000 nanometers. The second region of the absorber layer can have a thickness between 100 nanometers to 3000 nanometers. A ratio of an average atomic concentration of selenium in the first region of the absorber layer to an average atomic concentration of selenium in the second region of the absorber layer can be greater than 10.Type: ApplicationFiled: October 10, 2022Publication date: February 9, 2023Applicant: First Solar, Inc.Inventors: Kristian William Andreini, Holly Ann Blaydes, Jongwoo Choi, Adam Fraser Halverson, Eugene Thomas Hinners, William Hullinger Huber, Yong Liang, Joseph John Shiang
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Publication number: 20210399159Abstract: Embodiments of a photovoltaic device are provided herein. The photovoltaic device can include a layer stack and an absorber layer disposed on the layer stack. The absorber layer can include a first region and a second region. Each of the first region of the absorber layer and the second region of the absorber layer can include a compound comprising cadmium, selenium, and tellurium. An atomic concentration of selenium can vary across the absorber layer. The first region of the absorber layer can have a thickness between 100 nanometers to 3000 nanometers. The second region of the absorber layer can have a thickness between 100 nanometers to 3000 nanometers. A ratio of an average atomic concentration of selenium in the first region of the absorber layer to an average atomic concentration of selenium in the second region of the absorber layer can be greater than 10.Type: ApplicationFiled: September 3, 2021Publication date: December 23, 2021Applicant: First Solar, Inc.Inventors: Kristian William Andreini, Holly Ann Blaydes, Jongwoo Choi, Adam Fraser Halverson, Eugene Thomas Hinners, William Hullinger Huber, Yong Liang, Joseph John Shiang
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Patent number: 11164989Abstract: Embodiments of a photovoltaic device are provided herein. The photovoltaic device can include a layer stack and an absorber layer disposed on the layer stack. The absorber layer can include a first region and a second region. Each of the first region of the absorber layer and the second region of the absorber layer can include a compound comprising cadmium, selenium, and tellurium. An atomic concentration of selenium can vary across the absorber layer. The first region of the absorber layer can have a thickness between 100 nanometers to 3000 nanometers. The second region of the absorber layer can have a thickness between 100 nanometers to 3000 nanometers. A ratio of an average atomic concentration of selenium in the first region of the absorber layer to an average atomic concentration of selenium in the second region of the absorber layer can be greater than 10.Type: GrantFiled: July 21, 2020Date of Patent: November 2, 2021Assignee: First Solar, Inc.Inventors: Kristian William Andreini, Holly Ann Blaydes, Jongwoo Choi, Adam Fraser Halverson, Eugene Thomas Hinners, William Hullinger Huber, Yong Liang, Joseph John Shiang
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Patent number: 11114580Abstract: Embodiments of a photovoltaic device are provided herein. The photovoltaic device can include a layer stack and an absorber layer disposed on the layer stack. The absorber layer can include a first region and a second region. Each of the first region of the absorber layer and the second region of the absorber layer can include a compound comprising cadmium, selenium, and tellurium. An atomic concentration of selenium can vary across the absorber layer. The first region of the absorber layer can have a thickness between 100 nanometers to 3000 nanometers. The second region of the absorber layer can have a thickness between 100 nanometers to 3000 nanometers. A ratio of an average atomic concentration of selenium in the first region of the absorber layer to an average atomic concentration of selenium in the second region of the absorber layer can be greater than 10.Type: GrantFiled: July 21, 2020Date of Patent: September 7, 2021Assignee: First Solar, Inc.Inventors: Kristian William Andreini, Holly Ann Blaydes, Jongwoo Choi, Adam Fraser Halverson, Eugene Thomas Hinners, William Hullinger Huber, Yong Liang, Joseph John Shiang
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Publication number: 20200350459Abstract: Embodiments of a photovoltaic device are provided herein. The photovoltaic device can include a layer stack and an absorber layer disposed on the layer stack. The absorber layer can include a first region and a second region. Each of the first region of the absorber layer and the second region of the absorber layer can include a compound comprising cadmium, selenium, and tellurium. An atomic concentration of selenium can vary across the absorber layer. The first region of the absorber layer can have a thickness between 100 nanometers to 3000 nanometers. The second region of the absorber layer can have a thickness between 100 nanometers to 3000 nanometers. A ratio of an average atomic concentration of selenium in the first region of the absorber layer to an average atomic concentration of selenium in the second region of the absorber layer can be greater than 10.Type: ApplicationFiled: July 21, 2020Publication date: November 5, 2020Applicant: First Solar, Inc.Inventors: Kristian William Andreini, Holly Ann Blaydes, Jongwoo Choi, Adam Fraser Halverson, Eugene Thomas Hinners, William Hullinger Huber, Yong Liang, Joseph John Shiang
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Patent number: 10784397Abstract: Embodiments of a photovoltaic device are provided herein. The photovoltaic device can include a layer stack and an absorber layer disposed on the layer stack. The absorber layer can include a first region and a second region. Each of the first region of the absorber layer and the second region of the absorber layer can include a compound comprising cadmium, selenium, and tellurium. An atomic concentration of selenium can vary across the absorber layer. The first region of the absorber layer can have a thickness between 100 nanometers to 3000 nanometers. The second region of the absorber layer can have a thickness between 100 nanometers to 3000 nanometers. A ratio of an average atomic concentration of selenium in the first region of the absorber layer to an average atomic concentration of selenium in the second region of the absorber layer can be greater than 10.Type: GrantFiled: November 26, 2018Date of Patent: September 22, 2020Assignee: First Solar, Inc.Inventors: Holly Ann Blaydes, Kristian William Andreini, William Hullinger Huber, Eugene Thomas Hinners, Joseph John Shiang, Yong Liang, Jongwoo Choi, Adam Fraser Halverson
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Patent number: 10720546Abstract: Embodiments of a photovoltaic device are provided herein. The photovoltaic device can include a layer stack and an absorber layer disposed on the layer stack. The absorber layer can include a first region and a second region. Each of the first region of the absorber layer and the second region of the absorber layer can include a compound comprising cadmium, selenium, and tellurium. An atomic concentration of selenium can vary across the absorber layer. The first region of the absorber layer can have a thickness between 100 nanometers to 3000 nanometers. The second region of the absorber layer can have a thickness between 100 nanometers to 3000 nanometers. A ratio of an average atomic concentration of selenium in the first region of the absorber layer to an average atomic concentration of selenium in the second region of the absorber layer can be greater than 10.Type: GrantFiled: November 26, 2018Date of Patent: July 21, 2020Assignee: First Solar, Inc.Inventors: Holly Ann Blaydes, Kristian William Andreini, William Hullinger Huber, Eugene Thomas Hinners, Joseph John Shiang, Yong Liang, Jongwoo Choi, Adam Fraser Halverson
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Publication number: 20190097079Abstract: Embodiments of a photovoltaic device are provided herein. The photovoltaic device can include a layer stack and an absorber layer disposed on the layer stack. The absorber layer can include a first region and a second region. Each of the first region of the absorber layer and the second region of the absorber layer can include a compound comprising cadmium, selenium, and tellurium. An atomic concentration of selenium can vary across the absorber layer. The first region of the absorber layer can have a thickness between 100 nanometers to 3000 nanometers. The second region of the absorber layer can have a thickness between 100 nanometers to 3000 nanometers. A ratio of an average atomic concentration of selenium in the first region of the absorber layer to an average atomic concentration of selenium in the second region of the absorber layer can be greater than 10.Type: ApplicationFiled: November 26, 2018Publication date: March 28, 2019Applicant: First Solar Inc.Inventors: Holly Ann Blaydes, Kristian William Andreini, William Hullinger Huber, Eugene Thomas Hinners, Joseph John Shiang, Yong Liang, Jongwoo Choi, Adam Fraser Halverson
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Patent number: 10141473Abstract: Embodiments of a photovoltaic device are provided herein. The photovoltaic device can include a layer stack and an absorber layer disposed on the layer stack. The absorber layer can include a first region and a second region. Each of the first region of the absorber layer and the second region of the absorber layer can include a compound comprising cadmium, selenium, and tellurium. An atomic concentration of selenium can vary across the absorber layer. The first region of the absorber layer can have a thickness between 100 nanometers to 3000 nanometers. The second region of the absorber layer can have a thickness between 100 nanometers to 3000 nanometers. A ratio of an average atomic concentration of selenium in the first region of the absorber layer to an average atomic concentration of selenium in the second region of the absorber layer can be greater than 10.Type: GrantFiled: July 11, 2018Date of Patent: November 27, 2018Assignee: First Solar, Inc.Inventors: Holly Ann Blaydes, Kristian William Andreini, William Hullinger Huber, Eugene Thomas Hinners, Joseph John Shiang, Yong Liang, Jongwoo Choi, Adam Fraser Halverson
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Publication number: 20180323334Abstract: Embodiments of a photovoltaic device are provided herein. The photovoltaic device can include a layer stack and an absorber layer disposed on the layer stack. The absorber layer can include a first region and a second region. Each of the first region of the absorber layer and the second region of the absorber layer can include a compound comprising cadmium, selenium, and tellurium. An atomic concentration of selenium can vary across the absorber layer. The first region of the absorber layer can have a thickness between 100 nanometers to 3000 nanometers. The second region of the absorber layer can have a thickness between 100 nanometers to 3000 nanometers. A ratio of an average atomic concentration of selenium in the first region of the absorber layer to an average atomic concentration of selenium in the second region of the absorber layer can be greater than 10.Type: ApplicationFiled: July 11, 2018Publication date: November 8, 2018Applicant: First Solar, Inc.Inventors: Holly Ann Blaydes, Kristian William Andreini, William Hullinger Huber, Eugene Thomas Hinners, Joseph John Shiang, Yong Liang, Jongwoo Choi, Adam Fraser Halverson
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Patent number: 10062800Abstract: A photovoltaic device is presented. The photovoltaic device includes a layer stack; and an absorber layer is disposed on the layer stack. The absorber layer includes selenium, and an atomic concentration of selenium varies non-linearly across a thickness of the absorber layer. A method of making a photovoltaic device is also presented.Type: GrantFiled: June 7, 2013Date of Patent: August 28, 2018Assignee: First Solar, Inc.Inventors: Holly Ann Blaydes, Kristian William Andreini, William Hullinger Huber, Eugene Thomas Hinners, Joseph John Shiang, Yong Liang, Jongwoo Choi, Adam Fraser Halverson
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Publication number: 20140360565Abstract: A photovoltaic device is presented. The photovoltaic device includes a layer stack; and an absorber layer is disposed on the layer stack. The absorber layer includes selenium, and an atomic concentration of selenium varies non-linearly across a thickness of the absorber layer. A method of making a photovoltaic device is also presented.Type: ApplicationFiled: June 7, 2013Publication date: December 11, 2014Applicant: First Solar, Inc.Inventors: Holly Ann Blaydes, Kristian William Andreini, William Hullinger Huber, Eugene Thomas Hinners, Joseph John Shiang, Yong Liang, Jongwoo Choi, Adam Fraser Halverson
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Publication number: 20140326315Abstract: A photovoltaic device is presented. The photovoltaic device includes a layer stack; and an absorber layer is disposed on the layer stack. The absorber layer comprises selenium, wherein an atomic concentration of selenium varies across a thickness of the absorber layer. The photovoltaic device is substantially free of a cadmium sulfide layer.Type: ApplicationFiled: May 2, 2013Publication date: November 6, 2014Applicant: First Solar, Inc.Inventors: Holly Ann Blaydes, Kristian William Andreini, William Hullinger Huber, Eugene Thomas Hinners, Joseph John Shiang, Yong Liang, Jongwoo Choi
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Publication number: 20130233374Abstract: A monolithically integrated cadmium telluride (CdTe) photovoltaic (PV) module includes a first electrically conductive layer and an insulating layer. The first electrically conductive layer is disposed below the insulating layer. The PV module further includes a back contact metal layer and a CdTe absorber layer. The back contact metal layer is disposed between the insulating layer and the CdTe absorber layer. The PV module further includes a window layer and a second electrically conductive layer. The window layer is disposed between the CdTe absorber layer and the second electrically conductive layer. At least one first trench extends through the back contact metal layer, at least one second trench extends through the absorber and window layers, and at least one third trench extends through the second electrically conductive layer. A method for monolithically integrating CdTe PV cells is also provided.Type: ApplicationFiled: April 19, 2013Publication date: September 12, 2013Applicant: GENERAL ELECTRIC COMPANYInventors: Bastiaan Arie Korevaar, James Neil Johnson, Holly Ann Blaydes, James Edward Pickett, Thomas Miebach
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Patent number: 8476105Abstract: In one aspect of the present invention, a method is provided. The method includes disposing a substantially amorphous cadmium tin oxide layer on a support; and thermally processing the substantially amorphous cadmium tin oxide layer in an atmosphere substantially free of cadmium from an external source to form a transparent layer, wherein the transparent layer has an electrical resistivity less than about 2×10?4 Ohm-cm. Method of making a photovoltaic device is also provided.Type: GrantFiled: December 22, 2010Date of Patent: July 2, 2013Assignee: General Electric CompanyInventors: Holly Ann Blaydes, George Theodore Dalakos, David William Vernooy, Allan Robert Northrup, Juan Carlos Rojo, Peter Joel Meschter, Hongying Peng, Hongbo Cao, Yangang Andrew Xi, Robert Dwayne Gossman, Anping Zhang