Abstract: The present invention provides a semiconductor device, a method of manufacture therefore and a method for manufacturing an integrated circuit including the same. The semiconductor device, among other elements, may include a substrate (110), as well as a nickel silicide region (170) located over the substrate (110), the nickel silicide region (170) having an amount of indium located therein.

Abstract: A semiconductor device includes a first transistor (52) and gated diode (50) formed at a face of a semiconductor layer (56). The first transistor (52) includes a source region (60a), a drain region (60b), a gate oxide layer (62), and a conductive gate (64). The gated diode (54) includes a first moat region (66a), a second moat region (66b), a gate oxide layer (68), and a conductive gate (70). A first conductor (77) connects the conductive gate (70) of the gated diode (54) to the semiconductor layer (56) and a second conductor (76) connects the moat regions (66a, 66b) of the gated diode (54) to the conductive gate (64) of the first transistor (52). Gated diode (54) has a reduced breakdown voltage relative to the gate oxide layer (62) of first transistor (52) and thus establishes a leakage path to semiconductor layer (56) to direct leakage current to semiconductor layer (56), thereby inhibiting charge from accumulating on the gate oxide layer (62) of first transistor (52).