Abstract: Provided is a cooling device capable of controlling the temperature of an upper portion of a reactor, or more particularly, a gas supply device, for example, a shower head. The cooling device includes a separator configured to uniformly and efficiently cool the gas supply device.

Abstract: Embodiments of the present invention provide a cathode active material for a lithium secondary battery including lithium-transition metal composite oxide particles. The lithium-transition metal composite oxide particles have a (113) plane FWHM change rate of 75% or less, which is measured through in-situ X-ray diffraction (XRD) and defined by Equation 1. Thereby, life-span characteristics of the lithium secondary battery may be improved by preventing a lattice structure and/or a crystal structure in lithium-transition metal composite oxide particles from being deformed.

Abstract: A cathode active material for a lithium secondary battery according to an embodiment includes lithium metal oxide particles containing lithium and nickel, and containing a small amount of cobalt or no cobalt. An average particle diameter, a modulus and a hardness of the lithium metal oxide particles are adjusted to satisfy a desired relation. A lithium secondary battery has improved high-temperature storage properties, structural stability and high power properties.

Abstract: A switch apparatus, includes: a base module including a base case, and a moving magnet movably mounted in the base case; and a manipulation module including a manipulation case, and a first magnet fixedly mounted in the manipulation case, wherein the moving magnet moves between a hold position and a releasable position, the hold position refers to a position in which the manipulation module is held onto the base module as an attractive force acts between the moving magnet and the first magnet, and the releasable position refers to a position in which the manipulation module is releasable from the base module as a repulsive force acts between the moving magnet and the first magnet.

Abstract: A positive electrode active material for a secondary battery includes a lithium composite transition metal oxide including nickel (Ni), cobalt (Co), and manganese (Mn), wherein the lithium composite transition metal oxide has a layered crystal structure of space group R3m, includes the nickel (Ni) in an amount of 60 mol % or less based on a total amount of transition metals, includes the cobalt (Co) in an amount greater than an amount of the manganese (Mn), and is composed of single particles.

Abstract: A method and an apparatus are for providing information on management of vehicle. A method of operating an electronic apparatus for providing a user with information on management of a vehicle includes generating a management scenario for the vehicle, requesting the user to approve the management scenario, and outputting management guide information based on progress of the user's exiting and progress of the management scenario.

Abstract: The present disclosure relates to an organic electroluminescent compound and an organic electroluminescent device comprising the same. By comprising the compound according to the present disclosure, it is possible to produce an organic electroluminescent device having improved driving voltage, power efficiency, and/or lifetime properties compared to the conventional organic electroluminescent devices.

Abstract: Determining a semiconductor device manufacturing parameter may include determining an EPM (electrical measurement parameters) group that has a correlation in a baseline EPM dataset including EPMs of a device manufactured under a baseline condition, deriving principal components (PCs) corresponding to main correlation axes between EPMs in the EPM group, deriving a PC-based dataset including a baseline PC dataset and a conditional split PC dataset by converting the baseline EPM dataset and a conditional split EPM dataset measured from devices manufactured under conditional splits into a PC domain, determining, using the PC-based dataset, respective PCs which are effectively changed by the conditional splits, obtaining split variation information of the conditional splits, extracting an optimal point capable of optimizing a figure of merit of a semiconductor device within a range of the PC-based dataset, and deriving information for process feedback for realizing the optimal point using the split variation infor

Abstract: A server according to an embodiment includes a processor configured to receive a friend add request for a target account from a user terminal accessed with a user account; based on one of the user account and the target account being a protected account, transmit an approval request for the friend add request to a protector account connected to the protected account; and based on receiving a reply to the approval request from the protector terminal, add the target account to a friend list of the user account.

Abstract: A module and method for linking information of a plurality of driving units, and a module and method for linking driving units of a robot system in which a master controls a plurality of driving units included in a plurality of slave devices through communication are provided. The module and method for linking driving units of a robot system provide compatibility with an existing robot motion table that uses one driving unit for one device without requiring a separate conversion operation.

Abstract: Disclosed are data storage devices and methods of manufacturing the same. The methods may include providing a substrate including a cell region and a peripheral circuit region, forming a data storage layer on the cell region and the peripheral circuit region of the substrate, selectively forming a mask layer on a portion of the data storage layer that is formed on the peripheral circuit region, forming a top electrode layer on the data storage layer and the mask layer, patterning the top electrode layer to form a plurality of top electrodes on the cell region, and patterning the data storage layer using the plurality of top electrodes as an etch mask to form a plurality of data storage parts on the cell region. While patterning the top electrode layer, the mask layer on the peripheral circuit region may serve as an etch stop layer.

Abstract: A magnetic tunnel junction pattern includes a first magnetic layer, a tunnel barrier layer, a second magnetic layer, and a non-magnetic capping layer that are sequentially stacked on a substrate. A top electrode is disposed on the magnetic tunnel junction pattern. A bit line is disposed on the top electrode. The top electrode comprises a metal nitride pattern in contact with the non-magnetic capping layer and a metal pattern disposed on the metal nitride pattern.

Abstract: Disclosed are data storage devices and methods of manufacturing the same. The methods may include providing a substrate including a cell region and a peripheral circuit region, forming a data storage layer on the cell region and the peripheral circuit region of the substrate, selectively forming a mask layer on a portion of the data storage layer that is formed on the peripheral circuit region, forming a top electrode layer on the data storage layer and the mask layer, patterning the top electrode layer to form a plurality of top electrodes on the cell region, and patterning the data storage layer using the plurality of top electrodes as an etch mask to form a plurality of data storage parts on the cell region. While patterning the top electrode layer, the mask layer on the peripheral circuit region may serve as an etch stop layer.

Abstract: Provided is a cooling device capable of controlling the temperature of an upper portion of a reactor, or more particularly, a gas supply device, for example, a shower head. The cooling device includes a separator configured to uniformly and efficiently cool the gas supply device.

Abstract: A magnetic tunnel junction pattern includes a first magnetic layer, a tunnel barrier layer, a second magnetic layer, and a non-magnetic capping layer that are sequentially stacked on a substrate. A top electrode is disposed on the magnetic tunnel junction pattern. A bit line is disposed on the top electrode. The top electrode comprises a metal nitride pattern in contact with the non-magnetic capping layer and a metal pattern disposed on the metal nitride pattern.