Abstract: The present disclosure relates to burn-in apparatus, transfer method, burn-in chamber, and interchangeable frame thereof for semiconductor devices burn-in process. The burn-in apparatus comprises of a burn-in chamber with an incomplete base which is adapted to be completed and thermally insulated in cooperation with a thermal insulation base of at least one interchangeable frame which is adapted to be removably moved into and docked in the burn-in chamber to complete the burn-in apparatus. The burn-in apparatus comprises the burn-in chamber and at least one frame. The apparatus is complete and thermally insulated when the frame is moved into the burn-in chamber and docked therein. The apparatus is incomplete and thermally uninsulated when the frame is moved out of the burn-in chamber and undocked therefrom.

Abstract: A micro light-emitting diode structure is provided. The micro light-emitting diode structure includes an epitaxial layer. The micro light-emitting diode structure also includes a reflecting layer disposed on the epitaxial layer. The micro light-emitting diode structure further includes a patterned electrode layer disposed between the epitaxial layer and the reflecting layer. The patterned electrode layer is divided into a plurality of patterned electrode segments, and the patterned electrode segments are separated from each other. Moreover, the micro light-emitting diode structure includes a first-type electrode and a second-type electrode disposed on the reflecting layer and electrically connected to the epitaxial layer.

Abstract: A micro light emitting diode structure including an epitaxial structure, a first insulating layer and a second insulating layer is provided. The epitaxial structure includes a first type semiconductor layer, a light emitting layer and a second type semiconductor layer. The first type semiconductor layer, the light emitting layer and a first portion of the second type semiconductor layer form a mesa. A second portion of the second type semiconductor layer is recessed relative the mesa to form a mesa surface. The first insulating layer covers from a top surface of the mesa to the mesa surface along a first side surface of the mesa, and exposes the second side surface. The second insulating layer directly covers a second side surface of the second portion, wherein a thickness ratio of the first insulating layer to the second insulating layer is between 10 and 50.

Abstract: The present disclosure relates to burn-in apparatus, transfer method, burn-in chamber, and interchangeable frame thereof for semiconductor devices burn-in process. The burn-in apparatus comprises a burn-in chamber with an incomplete base which is to be completed and thermally insulated in cooperation with a thermal insulation base of at least one interchangeable frame which is to be removably moved into and docked in the chamber to complete the burn-in apparatus. Cooperating alignment elements are respectively arranged at the frame and the chamber, and configured to progressively and movably couple to each other to lift the frame to bring a set of burn-in boards that are supported on the frame into alignment for insertion into a set of receiving connectors in the chamber.

Abstract: The present disclosure relates to burn-in apparatus, transfer method, burn-in chamber, and interchangeable frame thereof for semiconductor devices burn-in process. The burn-in apparatus comprises of a burn-in chamber with an incomplete base which is adapted to be completed and thermally insulated in cooperation with a thermal insulation base of at least one interchangeable frame which is adapted to be removably moved into and docked in the burn-in chamber to complete the burn-in apparatus. The burn-in apparatus comprises the burn-in chamber and at least one frame. The apparatus is complete and thermally insulated when the frame is moved into the burn-in chamber and docked therein. The apparatus is incomplete and thermally uninsulated when the frame is moved out of the burn-in chamber and undocked therefrom.

Abstract: An imprint lithographic method for making a polymeric structure comprising the steps of: (a) providing a mold having a shape forming a mold pattern; (b) providing a substrate having a higher surface energy relative to said mold; (c) providing a polymer film on said mold, said polymer film having a selected thickness, wherein the selected thickness of the polymer film on the mold pattern is capable of forming at least one frangible region in the polymer film having a thickness that is less than the remainder of the polymer film; (d) pressing the mold and the substrate relatively toward each other to form said frangible region; and (e) releasing at least one of said mold and said substrate from the other, wherein after said releasing, said frangible region remains substantially attached to said mold while the remainder of said polymer film forms the polymeric structure attached to said substrate.

Abstract: The present invention is directed to novel methods of imprinting substrate-supported or freestanding structures at low cost, with high pattern transfer yield, and using low processing temperature. Such methods overcome many of the above-described limitations of the prior art. Generally, such methods of the present invention employ a sacrificial layer of film.

Abstract: A method for using ion implantation to implant phosphorous or arsenic impurities into shallow source/drain regions or into polysilicon electrodes used in devices having shallow source/drain electrodes. A phosphorous source having an abundance of P2+ ions is used in an ion beam system adjusted to select P2+ ions. Since each ion contains two phosphorous atoms the ion beam requires twice the beam energy and half the beam density. This provides good wafer throughput and improved source life. An arsenic source having an abundance of As2+ ions can be substituted for the solid phosphorous source resulting in a beam of As2+ ions.

Abstract: The present invention is directed to micro- and nano-scale imprinting methods and the use of such methods to fabricate supported and/or free-standing 3-D micro- and/or nano-structures of polymeric, ceramic, and/or metallic materials. In some embodiments, a duo-mold approach is employed in the fabrication of these structures. In such methods, surface treatments are employed to impart differential surface energies to different molds and/or different parts of the mold(s). Such surface treatments permit the formation of three-dimensional (3-D) structures through imprinting and the transfer of such structures to a substrate. In some or other embodiments, such surface treatments and variation in glass transition temperature of the polymers used can facilitate separation of the 3-D structures from the molds to form free-standing micro- and/or nano-structures individually and/or in a film.

Abstract: The present invention is directed to micro- and nano-scale imprinting methods and the use of such methods to fabricate supported and/or free-standing 3-D micro- and/or nano-structures of polymeric, ceramic, and/or metallic materials, particularly for pixel segregation in OLED-based displays. In some embodiments, a duo-mold approach is employed in the fabrication of these structures. In such methods, surface treatments are employed to impart differential surface energies to different molds and/or different parts of the mold(s). Such surface treatments permit the formation of three-dimensional (3-D) structures through imprinting and the transfer of such structures to a substrate. In some or other embodiments, such surface treatments and variation in glass transition temperature of the polymers used can facilitate separation of the 3-D structures from the molds to form free-standing micro- and/or nano-structures individually and/or in a film.