Patents by Inventor Hong Ng
Hong Ng has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 11984392Abstract: A semiconductor package includes: a carrier having an electrically insulative body and a first contact structure at a first side of the electrically insulative body; and a semiconductor die having a first pad attached to the first contact structure of the carrier, the first pad being at source or emitter potential. The first pad is spaced inward from an edge of the semiconductor die by a first distance. The semiconductor die has an edge termination region between the edge and the first pad. The first contact structure of the carrier is spaced inward from the edge of the semiconductor die by a second distance greater than the first distance such that an electric field that emanates from the edge termination region in a direction of the carrier during normal operation of the semiconductor die does not reach the first contact structure of the carrier. Methods of production are also provided.Type: GrantFiled: August 27, 2021Date of Patent: May 14, 2024Assignee: Infineon Technologies AGInventors: Chee Yang Ng, Stefan Woetzel, Edward Fuergut, Thai Kee Gan, Chee Hong Lee, Jayaganasan Narayanasamy, Ralf Otremba
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Patent number: 11979194Abstract: A large-area, waveguide-based, high-speed ultraviolet and visible light photodetector system for optical wireless communication includes a substrate; plural, parallel, waveguides formed directly on the substrate and including a high quantum-yield wavelength-converting material of semiconductor nature; an optical coupling system optically connected to each one of the plural, parallel, waveguides; and a photodetector optically connected to the optical coupling system and configured to detect an outgoing light. The wavelength-converting material converts a first wavelength of an incoming light at high-speed, received by the plural, parallel, waveguides, into a second wavelength of the outgoing light. The first wavelength is different from the second wavelength, and the first and second wavelengths are between 200 and 800 nm.Type: GrantFiled: February 19, 2020Date of Patent: May 7, 2024Assignee: KING ABDULLAH UNIVERSITY OF SCIENCE AND TECHNOLOGYInventors: Boon Siew Ooi, Chun Hong Kang, Tien Khee Ng
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Patent number: 11955583Abstract: A micro-light emitting diode (uLED) device comprises: a mesa comprising: a plurality of semiconductor layers including an n-type layer, an active layer, and a p-type layer; a p-contact layer contacting the p-type layer; a cathode contacting the first sidewall of the n-type layer; a first region of dielectric material that insulates the p-contact layer, the active layer, and a first sidewall of the p-type layer from the cathode; an anode contacting the top surface of the p-contact layer; and a second region of dielectric material that insulates the active layer, a second sidewall of the p-type layer, and the second sidewall of the n-type layer from the anode. The top surface of the p-contact layer has a different planar orientation compared to the first and second sidewalls of the n-type layer. Methods of making and using the uLED devices are also provided.Type: GrantFiled: March 26, 2021Date of Patent: April 9, 2024Assignee: Lumileds LLCInventors: Yeow Meng Teo, Wee-Hong Ng, Pei-Chee Mah, Chee Chung James Wong, Geok Joo Soh
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Publication number: 20240110782Abstract: A system includes a radiation source configured to emit a radiation beam. The system further includes a first optical sensor configured to detect a first intensity of a first portion of the radiation beam reflected from a surface of an object. The system further includes a second optical sensor configured to detect a second intensity of a second portion of the radiation beam scattered by the surface of the object. The system further includes a processing device communicatively coupled to the first optical sensor and the second optical sensor. The processing device is configured to determine at least one of a roughness or an emissivity of the surface of the object based on a comparison of the first intensity and the second intensity.Type: ApplicationFiled: September 29, 2022Publication date: April 4, 2024Inventors: Eric Chin Hong Ng, Todd J. Egan, Mehdi Vaez-Iravani
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Patent number: 11869998Abstract: Strings of interconnected PV cells within a PV laminate or module are themselves connected by one or more cross-ties. These cross-tied strings can be oriented in a straight or serpentine fashion and spacings between adjacent strings may differ depending upon whether a cross-tie connection is present or not. The PV cells may be multi-diode PV cells having a shared substrate. PV cells connected by a cross-tie are connected in parallel and have a shared voltage potential.Type: GrantFiled: March 24, 2022Date of Patent: January 9, 2024Assignee: MAXEON SOLAR PTE. LTD.Inventors: Tamir Lance, Hoi Hong Ng, David Okawa, Adam Rothschild Hoffman
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Publication number: 20230299227Abstract: A micro-light emitting diode (uLED) device comprises: a mesa comprising: a plurality of semiconductor layers including an n-type layer, an active layer, and a p-type layer; a p-contact layer contacting the p-type layer; a cathode contacting the first sidewall of the n-type layer; a first region of dielectric material that insulates the p-contact layer, the active layer, and a first sidewall of the p-type layer from the cathode; an anode contacting the top surface of the p-contact layer; and a second region of dielectric material that insulates the active layer, a second sidewall of the p-type layer, and the second sidewall of the n-type layer from the anode. The top surface of the p-contact layer has a different planar orientation compared to the first and second sidewalls of the n-type layer. Methods of making and using the uLED devices are also provided.Type: ApplicationFiled: May 25, 2023Publication date: September 21, 2023Applicant: Lumileds LLCInventors: Yeow Meng Teo, Wee-Hong Ng, Pei-Chee Mah, Chee Chung James Wong, Geok Joo Soh
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Patent number: 11705534Abstract: A micro-light emitting diode (uLED) device comprises: a mesa comprising: a plurality of semiconductor layers including an n-type layer, an active layer, and a p-type layer; a p-contact layer contacting the p-type layer; a cathode contacting the first sidewall of the n-type layer; a first region of dielectric material that insulates the p-contact layer, the active layer, and a first sidewall of the p-type layer from the cathode; an anode contacting the top surface of the p-contact layer; and a second region of dielectric material that insulates the active layer, a second sidewall of the p-type layer, and the second sidewall of the n-type layer from the anode. The top surface of the p-contact layer has a different planar orientation compared to the first and second sidewalls of the n-type layer. Methods of making and using the uLED devices are also provided.Type: GrantFiled: March 26, 2021Date of Patent: July 18, 2023Assignee: Lumileds LLCInventors: Yeow Meng Teo, Wee-Hong Ng, Pei-Chee Mah, Chee Chung James Wong, Geok Joo Soh
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Publication number: 20230072512Abstract: A metal stack of layers contacting an N-type layer of a light emitting diode (LED) device comprises: an ohmic contact layer electrically contacting the N-type layer and having a work function value that is less than or equal to a work function value of the N-type layer; a reflective layer electrically contacting the ohmic contact layer; a first material barrier layer electrically contacting the reflective layer; a current carrying layer electrically contacting the first material barrier layer; and a second material barrier layer electrically contacting the current carrying layer. LED devices incorporate the metal stack of layer as a bonding material and/or as an ohmic contact-reflective material. Methods of making and using the metal stacks and LED devices are also provided.Type: ApplicationFiled: September 1, 2022Publication date: March 9, 2023Applicant: Lumileds LLCInventors: Wali Zhang, Zhan Hong Cen, Wee-Hong Ng, Yeow Meng Teo
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Publication number: 20230075707Abstract: A metal stack of layers contacting an N-type layer of a light emitting diode (LED) device comprises: an ohmic contact layer electrically contacting the N-type layer and having a work function value that is less than or equal to a work function value of the N-type layer; a reflective layer electrically contacting the ohmic contact layer; a first material barrier layer electrically contacting the reflective layer; a current carrying layer electrically contacting the first material barrier layer; and a second material barrier layer electrically contacting the current carrying layer. LED devices incorporate the metal stack of layer as a bonding material and/or as an ohmic contact-reflective material. Methods of making and using the metal stacks and LED devices are also provided.Type: ApplicationFiled: September 1, 2022Publication date: March 9, 2023Inventors: Wali Zhang, Zhan Hong Cen, Wee-Hong Ng, Yeow Meng Teo
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Publication number: 20230074920Abstract: A metal stack of layers contacting an N-type layer of a light emitting diode (LED) device comprises: an ohmic contact layer electrically contacting the N-type layer and having a work function value that is less than or equal to a work function value of the N-type layer; a reflective layer electrically contacting the ohmic contact layer; a first material barrier layer electrically contacting the reflective layer; a current carrying layer electrically contacting the first material barrier layer; and a second material barrier layer electrically contacting the current carrying layer. LED devices incorporate the metal stack of layer as a bonding material and/or as an ohmic contact-reflective material. Methods of making and using the metal stacks and LED devices are also provided.Type: ApplicationFiled: September 1, 2022Publication date: March 9, 2023Applicant: Lumileds LLCInventors: Wali Zhang, Zhan Hong Cen, Wee-Hong Ng, Yeow Meng Teo
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Patent number: 11532761Abstract: Composite making regions are provided. These masking regions can include layers or other areas of different transparency where a first region has a first transparency and a second region has a different transparency. Masking regions can be positioned between adjacent photovoltaic cells of photovoltaic arrays.Type: GrantFiled: June 3, 2021Date of Patent: December 20, 2022Assignee: SunPower CorporationInventor: Hoi Hong Ng
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Publication number: 20220310425Abstract: A method includes identifying first structure data of a first region of a substrate and receiving optical metrology data of the substrate associated with one or more substrate deposition processes in a processing chamber. The method further includes determining, based on the optical metrology data and the first structure data, a first growth rate of the first region of the substrate associated with the one or more substrate deposition processes. The method further includes predicting, based on the optical metrology data and the first growth rate, thickness data of a second region of the substrate without second structure data of the second region.Type: ApplicationFiled: March 29, 2021Publication date: September 29, 2022Inventors: Eric Chin Hong Ng, Edward Wibowo Budiarto, Mehdi Vaez-Iravani, Todd Jonathan Egan, Venkatakaushik Voleti
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Publication number: 20220310860Abstract: Strings of interconnected PV cells within a PV laminate or module are themselves connected by one or more cross-ties. These cross-tied strings can be oriented in a straight or serpentine fashion and spacings between adjacent strings may differ depending upon whether a cross-tie connection is present or not. The PV cells may be multi-diode PV cells having a shared substrate. PV cells connected by a cross-tie are connected in parallel and have a shared voltage potential.Type: ApplicationFiled: March 24, 2022Publication date: September 29, 2022Applicant: SunPower CorporationInventors: Tamir Lance, Hoi Hong Ng, David Okawa, Adam Rothschild Hoffman
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Publication number: 20220290974Abstract: An optical metrology model for in-line thickness measurements of a film overlying non-ideal structures on a substrate is generated by performing pre-measurements prior to deposition of the film and performing post-measurements after the deposition. The pre- and post-measurements are performed at at least one of multiple polarization angles or multiple orientations of the substrate. Differences in reflectance between the pre- and post-measurements are determined at the multiple polarization angles and the multiple orientations. At least one of the multiple polarization angles or the multiple orientations are identified where the differences in reflectance are indicative of a suppressed influence from the non-ideal structures.Type: ApplicationFiled: March 11, 2021Publication date: September 15, 2022Inventors: Eric Chin Hong Ng, Edward Budiarto, Sergey Starik, Todd J. Egan
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Publication number: 20220292661Abstract: An automated inspection system includes a machine-vision inspection device, a repair station and an artificial intelligence module connected to the machine-vision inspection device, and a processing platform connected to the repair station and the artificial intelligence module. The machine-vision inspection device obtains an image of a to-be-inspected object and displays the image on an operation screen of the repair station, the artificial intelligence module retrieves the image of the to-be-inspected object to perform inference for classification, the processing platform automatically overlaps result data of classification inference for the image of the to-be-inspected object on the operation screen of the repair station, and intercepts and transmits result data of manual review, which is inputted by an operator through a user interface, to the repair station.Type: ApplicationFiled: March 10, 2021Publication date: September 15, 2022Inventors: Chua-Hong NG, Ming-Che CHENG
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Publication number: 20220173276Abstract: A micro-light emitting diode (uLED) device comprises: a mesa comprising: a plurality of semiconductor layers including an n-type layer, an active layer, and a p-type layer; a p-contact layer contacting the p-type layer; a cathode contacting the first sidewall of the n-type layer; a first region of dielectric material that insulates the p-contact layer, the active layer, and a first sidewall of the p-type layer from the cathode; an anode contacting the top surface of the p-contact layer; and a second region of dielectric material that insulates the active layer, a second sidewall of the p-type layer, and the second sidewall of the n-type layer from the anode. The top surface of the p-contact layer has a different planar orientation compared to the first and second sidewalls of the n-type layer. Methods of making and using the uLED devices are also provided.Type: ApplicationFiled: March 26, 2021Publication date: June 2, 2022Applicant: Lumileds LLCInventors: Yeow Meng Teo, Wee-Hong Ng, Pei-Chee Mah, Chee Chung James Wong, Geok Joo Soh
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Publication number: 20220173267Abstract: A micro-light emitting diode (uLED) device comprises: a mesa comprising: a plurality of semiconductor layers including an n-type layer, an active layer, and a p-type layer; a p-contact layer contacting the p-type layer; a cathode contacting the first sidewall of the n-type layer; a first region of dielectric material that insulates the p-contact layer, the active layer, and a first sidewall of the p-type layer from the cathode; an anode contacting the top surface of the p-contact layer; and a second region of dielectric material that insulates the active layer, a second sidewall of the p-type layer, and the second sidewall of the n-type layer from the anode. The top surface of the p-contact layer has a different planar orientation compared to the first and second sidewalls of the n-type layer. Methods of making and using the uLED devices are also provided.Type: ApplicationFiled: March 26, 2021Publication date: June 2, 2022Applicant: Lumileds LLCInventors: Yeow Meng Teo, Wee-Hong Ng, Pei-Chee Mah, Chee Chung James Wong, Geok Joo Soh
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Patent number: 11230621Abstract: A curable polymer latex composition obtainable by: (a) subjecting a monomer mixture comprising i. at least one conjugated diene; ii. at least one ethylenically unsaturated nitrile; iii. optionally at least one ethylenically unsaturated acid; iv. optionally at least one further ethylenically unsaturated compound different from any of the compounds (i)-(iii); to free-radical emulsion polymerization in an aqueous reaction medium to form a raw polymer latex; and (b) allowing the obtained raw latex to mature in the presence of at least one thiocarbonyl-functional compound, wherein the at least one thiocarbonyl-functional compound is present in an amount of at least 0.05 wt.-%, based on the total amount of monomers subjected to free-radical emulsion polymerization in step (a), and (c) optionally compounding the matured polymer latex with one or more cross-linking agent. Methods for making such curable polymer latex composition or rubber articles made therefrom, respectively.Type: GrantFiled: December 15, 2016Date of Patent: January 25, 2022Inventors: Gareth Simpson, Asrulrani Abd Rani, Thian Hong Ng
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Publication number: 20210384363Abstract: Composite making regions are provided. These masking regions can include layers or other areas of different transparency where a first region has a first transparency and a second region has a different transparency. Masking regions can be positioned between adjacent photovoltaic cells of photovoltaic arrays.Type: ApplicationFiled: June 3, 2021Publication date: December 9, 2021Applicant: SunPower CorporationInventor: Hoi Hong Ng
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Patent number: 10982075Abstract: The present invention relates to a polymer latex for dip-molding applications including: particles of a carboxylated conjugated diene nitrile latex polymer in combination or association with particles of a latex polymer including at least one oxirane-functional group, to the use of said polymer latex for the production of dip-molded articles or for coating or impregnating a substrate, to compounded compositions including said polymer latex, to a method for making dip-molded articles and to articles made by using said polymer latex.Type: GrantFiled: June 1, 2016Date of Patent: April 20, 2021Assignee: Synthomer Sdn. Bhd.Inventors: Zhenli Wei, Dieter Wolters, Floyd Greaves, Alexandra Abele, Thian Hong Ng