Abstract: The present disclosure discloses an electroencephalogram (EEG) emotion recognition method based on a spiking convolutional neural network. In the present disclosure, after EEG emotion data is preprocessed, a differential entropy feature is extracted and a time window is intercepted, and then a spiking convolutional encoder is configured to encode the EEG emotion data; a spiking convolutional feature extractor extracts a spiking data feature; and a spiking fully connected classifier performs learning and classification. In the present disclosure, a spiking neural network combining a spiking convolutional layer and a spiking fully connected layer is trained directly to achieve an objective of EEG emotion classification.

Abstract: A composition for inhibiting intestinal permeability, treating leaky gut related diseases and/or preventing leaky gut related diseases including a Chinese herbal compound material or a Chinese herbal compound extract is provided. The Chinese herbal compound material includes Ganoderma, red jujube, longan and lotus seed. Moreover, the Chinese herbal compound extract includes a Ganoderma extract, a red jujube extract, a longan extract and a lotus seed extract.

Abstract: Implementations described herein relate to various semiconductor device assemblies. In some implementations, a semiconductor device assembly may include a substrate and multiple first electrical contacts disposed on the substrate. The semiconductor device assembly may include a load switch coupled to the substrate and including a first outer surface facing the substrate and an opposing second outer surface facing away from the substrate. The load switch may include multiple second electrical contacts disposed on the second outer surface. The semiconductor device assembly may include multiple wire bonds electrically coupling the load switch to the substrate, wherein each wire bond electrically couples a corresponding first electrical contact, of the multiple first electrical contacts, to a corresponding second electrical contact, of the multiple second electrical contacts.

Abstract: Implementations described herein relate to various semiconductor device assemblies. In some implementations, a semiconductor package includes a substrate, a semiconductor die disposed on the substrate, and a passive electronic component disposed on the semiconductor die.

Abstract: The present application provides a comfortable lightweight bullet-proof and stab-resistant suit and a preparation method thereof. A first aspect of the present application provides a comfortable lightweight bullet-proof and stab-resistant suit, including a sheath and a protection core sheet disposed in the sheath, and the protection core sheet includes a first protection layer, a second protection layer, a third protection layer and a buffer layer which are sequentially stacked together. The bullet-proof and stab-resistant suit provided in the present application has better response protection characteristics in the process of bullet penetration or knife tip stab, and the prepared aramid unidirectional cloth has low areal density, apparent flatness, no bubbles, and excellent softness, so that any bending within 180° can be realized.

Abstract: A method manufacturing of a semiconductor structure including following steps is provided. A material layer is provided. A first mask layer is formed on the material layer. Core patterns are formed on the first mask layer. A spacer material layer is conformally formed on the core patterns. An etch-back process is performed on the spacer material layer. A portion of the spacer material layer located on two ends of the core pattern is removed, then spacer structures are formed. Each spacer structure includes a merged spacer and a non-merged spacer. The core patterns are removed. The first patterned mask layer is formed to cover a portion of the merged spacer and expose another portion of the merged spacer and the non-merged spacer. The first patterned mask layer and the spacer structure are used as a mask, and the first mask layer is patterned into a second patterned mask layer.

Abstract: The invention relates to a first curable coating composition comprising a first layer comprising at least one epoxy resin and at least one hybrid nanofiller, and a second layer comprising carbon nanotubes (CNTs). This invention also relates to a second curable coating composition comprising at least one hybrid nanofiller; at least one epoxy resin; and at least one curing agent. This invention also relates to methods of making the curable coating compositions. This invention also relates to methods for coating the surface of a metallic coated substrate.

Abstract: The invention discloses an adjusting structure and a stand for photographic apparatus. The adjusting structure includes a first adjusting rod, a first connecting member, a second connecting member, a second adjusting rod, a first locking member and a supporting member. The first connecting member is fixedly connected with the first adjusting rod, the second connecting member is rotationally connected with the first connecting member and is provided with a first mounting hole, wherein the second connecting member can be rotated relative to the first connecting member to adjust an included angle with the first connecting member, the second adjusting rod is penetrated through the first mounting hole and movablely connected with the first adjusting rod, and can be moved relative to the first adjusting rod along a straight direction.

Abstract: A semiconductor device assembly includes a semiconductor die, a substrate carrying the semiconductor die, and a printed circuit board (PCB) coupled to the substrate. The PCB includes a primary conductive layer including a first surface of the substrate and a first solder mask layer coupled to the first surface. The substrate also includes a secondary conductive layer including a second surface of the substrate and a second solder mask layer coupled to the second surface. The substrate further includes an inner conductive layer positioned between the primary layer and the secondary layer, where the inner layer includes a bond pad positioned at the end of an opening that extends from the first solder mask layer through the primary layer to the bond pad of the inner layer. By attaching a solder ball to the bond pad of the inner layer, standoff height is reduced.

Abstract: A semiconductor device assembly including a semiconductor device having a plurality of pillars disposed on a backside surface of the semiconductor device; and a substrate, including: a solder mask layer disposed on a front side surface of the substrate, a plurality of extended bond pads disposed on the frontside surface of the substrate and surrounded by the solder mask layer, the plurality of extended bond pads each having a top surface higher than a top surface of the solder mask layer, and wherein the semiconductor device is directly attached to the substrate by bonding each of the plurality of pillars of the semiconductor device to the top surface of a corresponding one of the plurality of extended bond pads with a solder connection.

Abstract: A semiconductor device assembly including a substrate; a first split via including a first via land that is disposed on a surface of the substrate and that has a first footprint with a half-moon shape with a first radius of curvature, and a first via that passes through the substrate and that has a second radius of curvature, wherein the first via is disposed within the first footprint; and a second split via including a second via land that is disposed on the surface of the substrate and that has a second footprint with the half-moon shape with the first radius of curvature, and a second via that passes through the substrate and that has the second radius of curvature, wherein the second via is disposed within the second footprint, wherein the first and second via lands are disposed entirely within a circular region having the first radius of curvature.

Abstract: Stacked semiconductor devices, and related systems and methods, are disclosed herein. In some embodiments, the stacked semiconductor device includes a package substrate having at least a first layer and a second layer, an interconnect extending through the package substrate, a stack of dies carried by the package substrate, and one or more wirebonds electrically coupling the stack of dies to package substrate. Each of the layers of the package substrate can include a section of the interconnect with a frustoconical shape. Each of the sections can be directly coupled together. Further, the section in an uppermost layer of the package substrate is exposed at an upper surface of the package substrate. The wirebonds can be directly coupled to the exposed surface of the uppermost section.

Abstract: A hydro-photovoltaic complementary operation chart application method for a clean energy base includes: divide a hydro-photovoltaic complementary operation chart into two sub-operation charts by runoff probability and critical probability; predict runoff and predicted photovoltaic output during the operation cycle, select the sub-operation chart by the runoff probability, determine hydropower output of a reservoir in the current month according to water level of the reservoir at the beginning of the current month and the operation area, and obtain the water level of the reservoir at the end of the current month through the runoff calculation; obtain long-term hydropower output process and reservoir level process in the clean energy base until the hydropower output and water level of the reservoir in all months of the operation cycle are calculated, and calculate hydropower generation probability to complete operation.

Abstract: A semiconductor device and method of manufacturing that includes a first etch stop layer and a second etch stop layer to prevent delamination and damage to underlying components. A first passivation layer and a second passivation layer are disposed on a substrate, with a metal pad exposed through the passivation layers and contacting a top metal component of the substrate. The first etch stop layer is then formed on the second passivation layer and the metal pad. A third passivation layer is then formed on the substrate with an opening to the metal pad, which is covered by the first etch stop layer. The second etch stop layer is then formed on the third passivation layer and in the opening on the second etch stop layer. A bottom metal film/conductive component is then formed on the second etch stop layer, photoresist is applied, and wet etching is performed. The metal pad is protected from damage caused by delamination of the second etch stop layer by the first etch stop layer.

Abstract: Systems, methods, apparatuses and non-transitory, computer-readable mediums are disclosed for short-range position tracking using a stationary magnetic field gradient. In an embodiment, a method comprises: obtaining, by a sensing array of a device worn or held by a user in an environment, a measurement of a stationary magnetic field generated by a magnetic source in the environment, the stationary magnetic field being independent of an ambient magnetic field in the environment; determining based on the measurement, a change in the magnetic field over time; determining based on the measurement, a change in the magnetic field over distance; obtaining, by the processor, a rotation angle of the device; determining a velocity of the device based on the change in the magnetic field over time, the change in the magnetic field over distance and the rotation angle of the device; and integrating the velocity to obtain a position of the device.

Abstract: A head-mountable device can securely support sensors in a manner that maintains their positions and orientations over time and avoids applying excessive strain on the sensors, thereby protecting them from harm. The sensor can be mounted on a flex circuit or circuit board, which is rigidly secured within an inner case, including for example a base and an inner shield. The inner case can be suspended within an outer case, including for example a frame and an outer shield. Shock absorbers on opposing sides of the inner case can flexibly couple the inner case to the outer case. The shock absorbers can dampen the effects of vibrations or other forces applied from the outer case. The inner case can decouple the sensor from strain applied from the shock absorbers.

Abstract: A composition for modulating intestinal permeability and/or treating and/or preventing leaky gut related diseases including a Chinese herbal compound material or a Chinese herbal compound extract is provided. The Chinese herbal compound material includes Ganoderma, red jujube, longan and lotus seed. Moreover, the Chinese herbal compound extract includes a Ganoderma extract, a red jujube extract, a longan extract and a lotus seed extract.

Abstract: Provided are an anti-ST2 antibody or a fragment thereof. The antibody or the fragment thereof can be specifically bound to human ST2, for inhibiting combination of IL-33 and human ST2, blocking an IL-33/ST2 intracellular signaling pathway, and inhibiting the promoting effect of different forms of IL-33 in cell-derived IL5, IL6 and 118 production. Compared with a known anti-ST2 antibody, this anti-ST2 antibody has higher biological activity, and can be used for preventing, treating or alleviating diseases related to ST2 expression or IL-33/ST2 pathway disorders.

Abstract: A method for extracting flavone aglycones in Chrysanthemum morifolium is provided. The method includes: (a) immersing a Chrysanthemum morifolium raw material in water or an aqueous solution to perform an immersion procedure for 3.5 hours or more to obtain an immersion sample; and (b) adding an extraction solvent to the immersion sample to perform an extraction procedure 5-60 minutes to obtain an extract. The Chrysanthemum morifolium raw material includes at least one of the following parts of Chrysanthemum morifolium: whole plant, roots, stems, leaves and flowers.

Abstract: A system and method is provided for controlling physiological-noise in functional magnetic resonance imaging using raw k-space data to extract physiological noise effects. The method can identify these effects when they are separable and directly reflects the artefactual effects on fMRI data, without the need for external monitoring or recording devices and to be compensated for via rigorous statistical analysis modeling of such noise sources. The physiological fluctuations may be treated as global perturbations presented around the origin point in a k-space 2D slice. Each k-space 2D slice may be acquired at a very short repetition time with an effective sampling rate to sample cardiac and respiratory rhythms through proper reordering and phase-unwarping techniques applied to the raw k-space data.