Patents by Inventor Hong Seok Chang

Hong Seok Chang has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20230332656
    Abstract: The present disclosure relates to a pad liner for a brake caliper, a brake caliper equipped with the pad liner and a method for assembling the brake caliper, and a vehicle equipped with the brake caliper. The pad liner according to an embodiment of the present disclosure includes a body seated in a caliper body and formed in a shape of a flat plate, an upper elastic portion connected to an upper portion of the body, and a lower elastic portion connected to a lower portion of the body, the upper elastic portion applies an elastic force to an upper portion of the brake pad, and the lower elastic portion applies an elastic force to a lower portion of the brake pad. According to embodiments of the present disclosure, reliability of a return operation of the brake pad is ensured to reduce drag and braking noise.
    Type: Application
    Filed: December 9, 2022
    Publication date: October 19, 2023
    Applicant: HYUNDAI MOBIS Co., Ltd.
    Inventors: Hong Seok CHANG, Bo Ram YOON
  • Publication number: 20160189760
    Abstract: A method of performing a read operation on nonvolatile memory device comprises receiving a read command, receiving addresses, detecting a transition of a read enable signal, generating a strobe signal based on the transition of the read enable signal, reading data corresponding to the received addresses, and outputting the read data after the strobe signal is toggled a predetermined number of times.
    Type: Application
    Filed: March 7, 2016
    Publication date: June 30, 2016
    Inventors: Chul Bum KIM, Hyung Gon KIM, Chul Ho LEE, Hong Seok CHANG
  • Patent number: 9318172
    Abstract: A method of performing a read operation on nonvolatile memory device comprises receiving a read command, receiving addresses, detecting a transition of a read enable signal, generating a strobe signal based on the transition of the read enable signal, reading data corresponding to the received addresses, and outputting the read data after the strobe signal is toggled a predetermined number of times.
    Type: Grant
    Filed: April 24, 2015
    Date of Patent: April 19, 2016
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Chul Bum Kim, Hyung Gon Kim, Chul Ho Lee, Hong Seok Chang
  • Publication number: 20150228318
    Abstract: A method of performing a read operation on nonvolatile memory device comprises receiving a read command, receiving addresses, detecting a transition of a read enable signal, generating a strobe signal based on the transition of the read enable signal, reading data corresponding to the received addresses, and outputting the read data after the strobe signal is toggled a predetermined number of times.
    Type: Application
    Filed: April 24, 2015
    Publication date: August 13, 2015
    Inventors: CHUL BUM KIM, HYUNG GON KIM, CHUL HO LEE, HONG SEOK CHANG
  • Patent number: 9036431
    Abstract: A method of performing a read operation on nonvolatile memory device comprises receiving a read command, receiving addresses, detecting a transition of a read enable signal, generating a strobe signal based on the transition of the read enable signal, reading data corresponding to the received addresses, and outputting the read data after the strobe signal is toggled a predetermined number of times.
    Type: Grant
    Filed: August 13, 2014
    Date of Patent: May 19, 2015
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Chul Bum Kim, Hyung Gon Kim, Chul Ho Lee, Hong Seok Chang
  • Publication number: 20140347942
    Abstract: A method of performing a read operation on nonvolatile memory device comprises receiving a read command, receiving addresses, detecting a transition of a read enable signal, generating a strobe signal based on the transition of the read enable signal, reading data corresponding to the received addresses, and outputting the read data after the strobe signal is toggled a predetermined number of times.
    Type: Application
    Filed: August 13, 2014
    Publication date: November 27, 2014
    Inventors: Chul Bum Kim, Hyung Gon Kim, Chul Ho Lee, Hong Seok Chang
  • Publication number: 20140241081
    Abstract: A method of performing a read operation on nonvolatile memory device comprises receiving a read command, receiving addresses, detecting a transition of a read enable signal, generating a strobe signal based on the transition of the read enable signal, reading data corresponding to the received addresses, and outputting the read data after the strobe signal is toggled a predetermined number of times.
    Type: Application
    Filed: May 8, 2014
    Publication date: August 28, 2014
    Inventors: Chul Bum Kim, Hyung Gon Kim, Chul Ho Lee, Hong Seok Chang
  • Patent number: 8750055
    Abstract: A method of performing a read operation on nonvolatile memory device comprises receiving a read command, receiving addresses, detecting a transition of a read enable signal, generating a strobe signal based on the transition of the read enable signal, reading data corresponding to the received addresses, and outputting the read data after the strobe signal is toggled a predetermined number of times.
    Type: Grant
    Filed: November 14, 2011
    Date of Patent: June 10, 2014
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Chul Bum Kim, Hyung Gon Kim, Chul Ho Lee, Hong Seok Chang
  • Publication number: 20120120741
    Abstract: A method of performing a read operation on nonvolatile memory device comprises receiving a read command, receiving addresses, detecting a transition of a read enable signal, generating a strobe signal based on the transition of the read enable signal, reading data corresponding to the received addresses, and outputting the read data after the strobe signal is toggled a predetermined number of times.
    Type: Application
    Filed: November 14, 2011
    Publication date: May 17, 2012
    Applicant: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Chul Bum Kim, Hyung Gon Kim, Chul Ho Lee, Hong Seok Chang
  • Patent number: RE48013
    Abstract: A method of performing a read operation on nonvolatile memory device comprises receiving a read command, receiving addresses, detecting a transition of a read enable signal, generating a strobe signal based on the transition of the read enable signal, reading data corresponding to the received addresses, and outputting the read data after the strobe signal is toggled a predetermined number of times.
    Type: Grant
    Filed: April 6, 2018
    Date of Patent: May 26, 2020
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Chul Bum Kim, Hyung Gon Kim, Chul Ho Lee, Hong Seok Chang
  • Patent number: RE48431
    Abstract: A method of performing a read operation on nonvolatile memory device comprises receiving a read command, receiving addresses, detecting a transition of a read enable signal, generating a strobe signal based on the transition of the read enable signal, reading data corresponding to the received addresses, and outputting the read data after the strobe signal is toggled a predetermined number of times.
    Type: Grant
    Filed: May 22, 2020
    Date of Patent: February 9, 2021
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Chul Bum Kim, Hyung Gon Kim, Chul Ho Lee, Hong Seok Chang
  • Patent number: RE49145
    Abstract: A method of performing a read operation on nonvolatile memory device comprises receiving a read command, receiving addresses, detecting a transition of a read enable signal, generating a strobe signal based on the transition of the read enable signal, reading data corresponding to the received addresses, and outputting the read data after the strobe signal is toggled a predetermined number of times.
    Type: Grant
    Filed: June 30, 2020
    Date of Patent: July 19, 2022
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Chul Bum Kim, Hyung Gon Kim, Chul Ho Lee, Hong Seok Chang