Abstract: An electrostatic chuck includes: a metal plate; a dielectric layer on the metal plate, the dielectric layer and the metal plate having a lift pin hole and an injection hole of a cooling gas; a lift pin moving up-and-down through the lift pin hole; first protection insulator on an inner surface of the lift pin hole; and second protection insulator on an inner surface of the injection hole.

Abstract: An impedance matching circuit for a plasma source includes: a first network including: a first coil; and a RF power supply applying a first voltage to the first coil; and a second network including; a second coil grounded having a second voltage, the second voltage being lower than the first voltage; first and second reactive elements, one end portion of the first and second reactive elements being connected to each end portion of the second coil, respectively; and a load connected to the other end portions of the first and second reactive elements, phases at two end portions of the load being different from each other.

Abstract: A plasma process chamber is monitored for excess current while fabricating a semiconductor device. The method includes grounding the plasma process chamber in which fabricating a semiconductor device is conducted using a plasma; detecting a current flowing in a ground line from the plasma process chamber to the ground; interpreting whether the detected current is more than a reference value during fabricating the semiconductor device; and deciding that the plasma process chamber is in an abnormal state when the detected current is more than the reference value. It is thereby possible to produce more stable plasma and the operation of the plasma process chamber is stabilized. Further, the expected life span of the plasma process chamber and other devices is enlarged, and the risk of injuring the operator is prevented.

Abstract: Disclosed is an apparatus for generating ICP, which has a heater having a hot wire as a heating source for heating elements in a chamber and inner wall of the chamber and also efficiently transfers heat of the heater through a heat transferring gas to the elements in the chamber and the inner wall of the chamber. According to the present invention, the elements in the chamber and the inner wall of the chamber can be heated up to a temperature of about 200° C., thereby reducing the adhesion of the by-product served as the source generating the undesirable particles. In addition, since the hot wire having a longer life span than the halogen lamp is used as heat radiating means, the life span of the apparatus is also increased.

Abstract: Disclosed is a wafer susceptor which includes: a ceramic body; a RF electrode mounted within the ceramic body; a heater mounted within the ceramic body and spaced apart from the RF electrode by a predetermined distance to be disposed below the RF electrode; and an RF shield of a metal material, the RF shield being electrically grounded and mounted within the ceramic body, the RF shield being disposed between the RF electrode and the heater without being in contact with either the heater or the RF electrode. In case where an RF power is applied to the RF electrode, it is possible to minimize an influence of an RF noise on the heater 24. Accordingly, since the RF power can be applied to the susceptor while heating the susceptor at a high temperature, it is possible to deposit a high-density thin film and also control properties of the thin film such as stress and step coverage. Further, the invention may take the stabilization of the power system.

Abstract: Disclosed is a parallel resonance antenna comprising: a whirl antenna having a plurality of antenna units installed two-dimensionally and radially around a central point, each of the antenna units having a ground point at a predetermined position thereof, portions outside the ground points respectively being bent in a same direction, the antenna units having a same size and direction, angles between the antenna units at the central point being all the same; a central conductive line connected to the central point to be normal to the whirl antenna, for being supplied with an RF power; a metal plate installed over and apart from the whirl antenna, the metal plate being connected with end portions of the antenna units, and having a penetration hole through which the central conductive line passes without contacting with the metal plate; and a variable resonance capacitor installed in series between the central conductive line and the metal plate.

Abstract: An antenna electrode for an inductively coupled plasma generation apparatus includes: a copper tube; a silver layer on an outer surface of the copper tube; and a first insulating layer on the silver layer. On the other hand, an antenna electrode for an inductively coupled plasma generation apparatus includes: an oxygen-free copper tube; and a first insulating layer on an outer surface of the oxygen-free copper tube.

Abstract: The present invention provides a method and system of monitoring a plasma process chamber during fabricating a semiconductor device. The method includes grounding the plasma process chamber in which fabricating a semiconductor device is conducted using a plasma; detecting a current flowing in a ground line from the plasma process chamber to the ground; interpreting whether said current is more than a reference value during fabricating the semiconductor device; and deciding that the plasma process chamber is in an abnormal state when said current is more than the reference value. Therefore in the present invention, it is possible to produce more stable plasma and then the operation of the plasma process chamber is stabilized. Further, the expected life span of the plasma process chamber and other devices is enlarged, and the risk of injuring the operator is prevented.

Abstract: In a plasma generating apparatus including a reaction chamber for providing a reaction space cut off from the outside; a plasma electrode installed at the outer upper portion of the reaction chamber, receiving high frequency power from the outside and generating plasma inside the reaction chamber; a grid horizontally installed to the reaction space, dividing the reaction space into an upper plasma generating space and a lower processing space and having plural through holes connecting the upper and lower spaces; an upper gas injector for providing gas to the plasma generating space; a lower gas injector for providing gas to the processing space; and a substrate supporting board installed to the processing space to be horizontally mounted with a substrate, by installing the grid in the reaction space, injecting inert gas through the upper gas injector and injecting process gas such as CxFy, etc. through the lower gas injector, a selective etching ratio of SiO2 can be improved.

Abstract: An electrostatic chuck includes: a metal plate; a dielectric layer on the metal plate, the dielectric layer and the metal plate having a lift pin hole and an injection hole of a cooling gas; a lift pin moving up-and-down through the lift pin hole; first protection insulator on an inner surface of the lift pin hole; and second protection insulator on an inner surface of the injection hole.

Abstract: Disclosed is a parallel resonance antenna comprising: a whirl antenna having a plurality of antenna units installed two-dimensionally and radially around a central point, each of the antenna units having a ground point at a predetermined position thereof, portions outside the ground points respectively being bent in a same direction, the antenna units having a same size and direction, angles between the antenna units at the central point being all the same; a central conductive line connected to the central point to be normal to the whirl antenna, for being supplied with an RF power; a metal plate installed over and apart from the whirl antenna, the metal plate being connected with end portions of the antenna units, and having a penetration hole through which the central conductive line passes without contacting with the metal plate; and a variable resonance capacitor installed in series between the central conductive line and the metal plate.

Abstract: Disclosed is a plasma process apparatus in which a semiconductor device manufacturing process using a plasma is performed. The apparatus includes: a vacuum chamber in which a semiconductor device manufacturing process is performed; a very high frequency (VHF) power source for generating a VHF power; a VHF parallel resonance antenna having a plurality of antenna coils connected in parallel to each other, and multiple variable capacitors insertion-installed in series in the antenna coils, the antenna being installed at an outer upper portion of the vacuum chamber, and supplied with the VHF power from the VHF power source; and an impedance matching box for impedance matching between the VHF power and the VHF parallel resonance antenna.

Abstract: A cluster tool for forming semiconductor devices using a wafer process includes: at least a load port where wafers are loaded; a front end system including an ATM robot and an ATM aligner, the front end system positioned under atmospheric pressure in a clean room condition; at least a load lock chamber including at least a vacuum wafer transfer device; at least a process module where the wafer process are conducted on the wafers; and at least a slot valve located between the load lock chamber and the process module; wherein the ATM robot transfers the wafers from the load port to the ATM aligner for a positional aligning and then transfers the positional-aligned wafers to the vacuum wafer transfer device; wherein the ATM aligner aligns the wafers for adequate process in the process module; and wherein the vacuum wafer transfer device includes at least a end effector that supports the wafers transferring by the ATM robot, and then the vacuum transfer device puts the wafers into the process module for the wafer

Abstract: An impedance matching circuit for a plasma source includes: a first network including: a first coil; and a RF power supply applying a first voltage to the first coil; and a second network including; a second coil grounded having a second voltage, the second voltage being lower than the first voltage; first and second reactive elements, one end portion of the first and second reactive elements being connected to each end portion of the second coil, respectively; and a load connected to the other end portions of the first and second reactive elements, phases at two end portions of the load being different from each other.

Abstract: Disclosed is an apparatus for generating ICP, which has a heater having a hot wire as a heating source for heating elements in a chamber and inner wall of the chamber and also efficiently transfers heat of the heater through a heat transferring gas to the elements in the chamber and the inner wall of the chamber. According to the present invention, the elements in the chamber and the inner wall of the chamber can be heated up to a temperature of about 200° C., thereby reducing the adhesion of the by-product served as the source generating the undesirable particles. In addition, since the hot wire having a longer life span than the halogen lamp is used as heat radiating means, the life span of the apparatus is also increased.

Abstract: Disclosed is an inductively coupled plasma processing apparatus which has a very-high-frequency parallel antenna producing inductively-coupled plasma for a large substrate. This plasma processing apparatus includes a very high frequency power source in order to generate the high dense plasma, and parallel-connected antenna units that receive the very high frequency power from the very high frequency source. The very high frequency power has a frequency of 20 MHz to 300 MHz. According to present invention, while the plasma density can be raised, the electron temperature can be lowered. Thus, when the dry etch process is conducted using CFx, the CFx/F ratio can be adjusted to have the low density of fluorine radical. And also, it is possible to have the high radical density of CF2, CF3 and the like. As a result, the proper radical ratio, which is relative to increase selection ratio, enhances the dry etch process excellently.