Abstract: Provided are a plasma generating apparatus and a substrate treating apparatus. The plasma generating apparatus includes a plurality of ground electrodes arranged inside a vacuum container and extending parallel to each other and power electrodes arranged between the ground electrodes. An area where a distance between the ground electrode and the power electrode is constant exists, and the power electrodes are tapered in a direction facing the substrate. The power electrodes are connected to an RF power source, and height of the power electrode is greater than that of the ground electrode in the direction facing the substrate.

Abstract: Provided are a plasma generating apparatus and a substrate treating apparatus. The plasma generating apparatus includes a plurality of ground electrodes arranged inside a vacuum container and extending parallel to each other and power electrodes arranged between the ground electrodes. An area where a distance between the ground electrode and the power electrode is constant exists, and the power electrodes are tapered in a direction facing the substrate. The power electrodes are connected to an RF power source, and height of the power electrode is greater than that of the ground electrode in the direction facing the substrate.

Abstract: A plasma processing system. The system may include a vacuum chamber including an electron emission region and a processing region, in which plasma is produced and a substrate is loaded, the electron emission region having a first pressure and the processing region being maintained to a pressure higher than the first pressure, a thermal electron emission unit provided in the electron emission region and used to emit a thermal electron, a grid electrode grounded and used to selectively provide an electron emitted from the thermal electron emission unit to the processing region, a substrate holder provided in a lower region of the vacuum chamber and in the processing region, the substrate holder being used to load the substrate thereon, and an RF power source configured to apply an RF power to the substrate holder and to produce the plasma.

Abstract: Provided are a plasma generating apparatus and a substrate processing apparatus. The plasma generating apparatus includes a plurality of dielectric tubes mounted in a plurality of through-holes formed in a vacuum container, respectively; antennas comprising or divided into a first group of antennas and a second group of antennas based on their disposition symmetry in the vacuum container and mounted outside the dielectric tubes, respectively; a first RF power source to supply power to the first group of antennas; a second RF power source to supply power to the second group of antennas; and a first power distribution unit disposed between the first group of antennas and the first RF power source to distribute the power from the first RF power source to the first group of antennas.

Abstract: A plasma generation apparatus includes a vacuum container, dielectrics connected to through-holes formed in the vacuum container, RF coils of the same structure disposed in the vicinity of the respective dielectrics and electrically connected in parallel, an RF power source to supply power to the RF coils, an impedance matching circuit disposed between the RF power source and the RF coils, and a power distribution unit disposed between the impedance matching circuit and one ends of the RF coils to distribute the power of the RF power source to the RF coils. The power distribution unit includes a power distribution line and a conductive outer cover enclosing the power distribution line. Distance between an input end of the power distribution unit and the RF coils are equal to each other, and the other ends of the RF coils are connected to the conductive outer cover to be grounded.

Abstract: A method for synthesis of a ferroelectric material characterized by the general formula AxByFz where A is an alkaline earth metal, B is transition metal or a main group metal, x and y each range from about 1 to about 5, and z ranges from about 1 to about 20 comprising contacting an alkaline earth metal fluoride, a difluorometal compound and a fluoroorganic acid in a medium to form a reaction mixture; and subjecting the reaction mixture to conditions suitable for hydrothermal crystal growth.

Abstract: A plasma generating apparatus and a substrate processing apparatus are disclosed. The plasma generating apparatus includes a disk-shaped first electrode receiving first RF power of a first frequency to generate plasma, a washer-type second electrode disposed around the circumference of the first electrode and receiving second RF power of a second frequency, an insulating spacer disposed between the first electrode and the second electrode, a first RF power source supplying power to the first electrode, and a second RF power source supplying power to the second electrode.

Abstract: Provided are a plasma generating apparatus and a substrate processing apparatus. The plasma generating apparatus includes a plurality of dielectric tubes mounted in a plurality of through-holes formed in a vacuum container, respectively; antennas comprising or divided into a first group of antennas and a second group of antennas based on their disposition symmetry in the vacuum container and mounted outside the dielectric tubes, respectively; a first RF power source to supply power to the first group of antennas; a second RF power source to supply power to the second group of antennas; and a first power distribution unit disposed between the first group of antennas and the first RF power source to distribute the power from the first RF power source to the first group of antennas.

Abstract: A plasma generation apparatus includes a vacuum container, dielectrics connected to through-holes formed in the vacuum container, RF coils of the same structure disposed in the vicinity of the respective dielectrics and electrically connected in parallel, an RF power source to supply power to the RF coils, an impedance matching circuit disposed between the RF power source and the RF coils, and a power distribution unit disposed between the impedance matching circuit and one ends of the RF coils to distribute the power of the RF power source to the RF coils. The power distribution unit includes a power distribution line and a conductive outer cover enclosing the power distribution line. Distance between an input end of the power distribution unit and the RF coils are equal to each other, and the other ends of the RF coils are connected to the conductive outer cover to be grounded.

Abstract: Provided are a plasma generating apparatus and a substrate treating apparatus. The plasma generating apparatus includes a plurality of ground electrodes arranged inside a vacuum container and extending parallel to each other and power electrodes arranged between the ground electrodes. An area where a distance between the ground electrode and the power electrode is constant exists, and the power electrodes are tapered in a direction facing the substrate. The power electrodes are connected to an RF power source, and height of the power electrode is greater than that of the ground electrode in the direction facing the substrate.

Abstract: Provided is a plasma generator which includes a vacuum chamber, a plurality of ground electrodes disposed inside the vacuum container and extending in parallel to each other, a plurality of power electrodes disposed between the ground electrodes inside the vacuum container, and a plurality of electrodes dielectrics disposed between the power electrodes and the ground electrodes inside the vacuum container. The power electrodes are connected to an RF power source.

Abstract: A method for synthesis of a ferroelectric material characterized by the general formula AxByFz where A is an alkaline earth metal, B is transition metal or a main group metal, x and y each range from about 1 to about 5, and z ranges from about 1 to about 20 comprising contacting an alkaline earth metal fluoride, a difluorometal compound and a fluoroorganic acid in a medium to form a reaction mixture; and subjecting the reaction mixture to conditions suitable for hydrothermal crystal growth.

Abstract: A hybrid coupled plasma type apparatus includes: a chamber having a gas-injecting unit; an electrostatic chuck in the chamber; an insulating plate over the gas-injecting unit; a high frequency generator; an impedance matching circuit connected to the high frequency generator; first and second antennas connected to the impedance matching circuit in parallel, a power of the high frequency generator being supplied to the first and second antennas; an electrode of a plate shape connected to one of the first and second antennas in serial, the power of the high frequency generator being supplied to the electrode; and a power distributor between the high frequency generator and one of the first and second antennas.

Abstract: A hybrid coupled plasma type apparatus includes: a chamber having a gas-injecting unit; an electrostatic chuck in the chamber; an insulating plate over the gas-injecting unit; a high frequency generator; an impedance matching circuit connected to the high frequency generator; first and second antennas connected to the impedance matching circuit in parallel, a power of the high frequency generator being supplied to the first and second antennas; an electrode of a plate shape connected to one of the first and second antennas in serial, the power of the high frequency generator being supplied to the electrode; and a power distributor between the high frequency generator and one of the first and second antennas.

Abstract: In a plasma generating apparatus including a reaction chamber for providing a reaction space cut off from the outside; a plasma electrode installed at the outer upper portion of the reaction chamber, receiving high frequency power from the outside and generating plasma inside the reaction chamber; a grid horizontally installed to the reaction space, dividing the reaction space into an upper plasma generating space and a lower processing space and having plural through holes connecting the upper and lower spaces; an upper gas injector for providing gas to the plasma generating space; a lower gas injector for providing gas to the processing space; and a substrate supporting board installed to the processing space to be horizontally mounted with a substrate, by installing the grid in the reaction space, injecting inert gas through the upper gas injector and injecting process gas such as CxFy, etc. through the lower gas injector, a selective etching ratio of SiO2 can be improved.

Abstract: The invention relates to an antenna device of a low impedance for generating a large quantity of inductively coupled plasma to process a large size of a specimen with adjustment for a uniform distribution in the density of plasma, comprising: a high frequency power source; a first antenna for receiving the high frequency power supplied from the high frequency power source; and a second antenna connected in parallel with the first antenna for receiving the high frequency power supplied from the high frequency power source, wherein a resonant state is kept between the first and second antennas.

Abstract: The present invention relates to a method for measuring radical species distribution in plasma by determining the intensity of the light emitted from the radical species and plasma parameters in plasma with the aid of optical and electrostatic probes, and an apparatus for measuring the radical species distribution. The method of the invention comprises the steps of: (i) measuring integral light intensity in a vacuum container by an optical probe inserted to the vacuum container; (ii) determining light intensity at each point of the vacuum container by differentiating the integral light intensity; (iii) measuring current and voltage applied to the electrostatic probe in the vacuum container; (iv) determining plasma parameters from the measured current and voltage; and, (v) measuring distribution of radical species from the light intensity and plasma parameters.