Patents by Inventor Hong-Zheng Lin

Hong-Zheng Lin has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20240072299
    Abstract: A method of making solid oxidesolid oxide electrolyte membrane comprises steps (S1)-(S5). Step (S1), mixing a high molecular polymer and a first solvent to form a first mixed slurry; and homogenizing the first mixed slurry, to obtain a reagent A. Step (S2), mixing an oxide powder, a dispersant and a second solvent to form a second mixed slurry, treating the second mixed slurry, to obtain a reagent B. Step (S3), adding a protective agent into the reagent B to form a third mixed slurry, and homogenizing the third mixed slurry to obtain a reagent C. Step (S4), mixing the reagent A and the reagent C to form a fourth mixed slurry, and treating the fourth mixed slurry a fifth mixed slurry; and homogenizating the fifth mixed slurry to form a solid electrolyte slurry. And step (S5), producing the solid oxidesolid oxide electrolyte membrane by a coating process.
    Type: Application
    Filed: April 12, 2023
    Publication date: February 29, 2024
    Inventors: HONG-ZHENG LAI, JING-KAI KAO, CHENG-TING LIN, TSENG-LUNG CHANG
  • Publication number: 20150004494
    Abstract: The present invention discloses a high electrochemical performance silicon/graphene composite anode structure. The electrochemical properties of silicon in the composite anode structure can be improved by graphene thin films. The thickness of the silicon thin film and the graphene thin films is less than 50 nm to prevent the composite anode structure from any volumetric change during the charge/discharge process. The manufacturing procedure starts with the formation of a Si/graphene unit layer, which includes an amorphous phase upper silicon thin film and a lower graphene thin film, on a copper foil current collector, so as to decrease the difference of conductivity between the silicon thin film and the copper foil current collector. Finally, the deposition is concluded with the formation of a graphene thin film on the topmost surface of the silicon thin film to prevent the surface of the anode structure from oxidation.
    Type: Application
    Filed: June 25, 2014
    Publication date: January 1, 2015
    Inventors: Mori Tatsuhiro, Chih-Jung Chen, Tai-Feng Hung, Saad G. Mohamed, Ru-Shi Liu, Shu-Fen Hu, Hong-Zheng Lin, Yi-Qiao Lin, Chien-Ming Sung, Bing-Joe Hwang