Patents by Inventor Hongtao Man

Hongtao Man has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 11908689
    Abstract: The present application discloses a method, a system, a device, and a storage medium for fabricating a GaN chip. The method includes: growing a Nb2N sacrificial layer on an original substrate, and growing a GaN insertion layer on the Nb2N sacrificial layer; growing a Ta2N sacrificial layer on the GaN insertion layer, and growing a semiconductor layer on the Ta2N sacrificial layer to form a GaN wafer; bonding the GaN wafer with a first surface of a temporary carrier, and removing the Nb2N sacrificial layer and the Ta2N sacrificial layer; and transferring remaining material after removal of the Nb2N sacrificial layer and the Ta2N sacrificial layer to a target substrate, and removing the temporary carrier from the remaining material to form the GaN chip.
    Type: Grant
    Filed: October 29, 2021
    Date of Patent: February 20, 2024
    Assignee: INSPUR SUZHOU INTELLIGENT TECHNOLOGY CO., LTD.
    Inventors: Fen Guo, Kang Su, Lang Zhou, Tuo Li, Hongtao Man
  • Publication number: 20230395375
    Abstract: The present application discloses a method, a system, a device, and a storage medium for fabricating a GaN chip. The method includes: growing a Nb2N sacrificial layer on an original substrate, and growing a GaN insertion layer on the Nb2N sacrificial layer; growing a Ta2N sacrificial layer on the GaN insertion layer, and growing a semiconductor layer on the Ta2N sacrificial layer to form a GaN wafer; bonding the GaN wafer with a first surface of a temporary carrier, and removing the Nb2N sacrificial layer and the Ta2N sacrificial layer; and transferring remaining material after removal of the Nb2N sacrificial layer and the Ta2N sacrificial layer to a target substrate, and removing the temporary carrier from the remaining material to form the GaN chip.
    Type: Application
    Filed: October 29, 2021
    Publication date: December 7, 2023
    Inventors: Fen GUO, Kang SU, Lang ZHOU, Tuo LI, Hongtao MAN
  • Patent number: 11789488
    Abstract: A parallel bus phase correction method and a device are provided. The method comprises: correcting a data bus, respectively performing phase correction tests on a clock line; determining a first optimal window of the clock line according to the clock test results; correcting the clock line by using a median value of the first optimal window, respectively performing phase correction tests on the data bus according to the multiple second phase adjustment values, and recording corresponding data test results; determining a second optimal window of the data bus according to the data test results; and performing phase correction on normal data transmission on the basis of the median value of the first optimal window and the median value of the second optimal window. The method achieves phase correction and ensures the correctness and accuracy of data transmission, even if a small clock offset is present.
    Type: Grant
    Filed: May 28, 2020
    Date of Patent: October 17, 2023
    Assignee: Inspur Suzhou Intelligent Technology Co., Ltd.
    Inventor: Hongtao Man
  • Publication number: 20220382321
    Abstract: A parallel bus phase correction method and a device are provided. The method comprises: correcting a data bus, respectively performing phase correction tests on a clock line; determining a first optimal window of the clock line according to the clock test results; correcting the clock line by using a median value of the first optimal window, respectively performing phase correction tests on the data bus according to the multiple second phase adjustment values, and recording corresponding data test results; determining a second optimal window of the data bus according to the data test results; and performing phase correction on normal data transmission on the basis of the median value of the first optimal window and the median value of the second optimal window. The method achieves phase correction and ensures the correctness and accuracy of data transmission, even if a small clock offset is present.
    Type: Application
    Filed: May 28, 2020
    Publication date: December 1, 2022
    Inventor: Hongtao Man