Abstract: The present disclosure provides a three-dimensional NAND memory device, comprising a NAND string including a memory cell to be inhibited to program, a word line driver, and a controller configured to control the word line driver to perform a programming operation on the memory cell controlled by a selected word line of a plurality of word lines including a first unselected word line adjacent to the selected word line, a first plurality of unselected word lines adjacent to the first unselected word line, and a second plurality of unselected word lines adjacent to the first plurality of unselected word lines. The programming operation includes applying a programming voltage signal to the selected word line; applying a first pass voltage to the first plurality of unselected word lines; and applying a second pass voltage to the second plurality of unselected word lines, the first pass voltage is different from the second pass voltage.

Abstract: The present disclosure provides a joint protection device, comprising a joint protection body that matches a shape of a joint. The joint protection body is a hollow housing having an opened bottom and comprises a front supporting portion and side supporting portions providing supports for the joint. A notch is provided in a portion of the joint protection body, which is close to a joint movement area. The notch divides the joint protection body into a plurality of joint pieces, adjacent joint pieces are connected by two local junctions respectively provided at appropriate positions on two sides of the joint protection body and can rotate with the local junctions as rotation fulcrums. Meanwhile, the present disclosure further provides other joint protection devices similar to the above, where an upper end of a joint protection body is provided with a clearance structure to ensure forward and backward movement of the joint.

Abstract: Provided is a joint protection device, including a joint protection body whose longitudinal and horizontal shapes match a shape of a joint, joint protection body being an integrally formed rigid hollow housing with an opened bottom and including a front supporting portion and side supporting portions respectively wrapping a front surface and side surfaces of joint to provide front and side support for joint; at least one notch being provided in a portion, close to a joint movement area, of joint protection body, and dividing joint protection body into a plurality of joint pieces; adjacent joint pieces being connected by two local junctions respectively provided at appropriate positions on two sides of joint protection body, and capable of rotating with local junctions as rotation fulcrums; and when joint pieces rotate around rotation fulcrums to a limiting position, adjacent joint pieces coming into contact with each other and stopping rotating.

Abstract: A joint movement supporting protection device, comprising a joint protection body (1) matched with a joint in shape, and a fixing device (2) connected or contacted with the joint protection body (1) and tightly attaching the joint protection body (1) to a joint of a human body. A plurality of upper notches (11) extending downwards from top but not penetrating through bottom are formed in a portion, close to a joint movement area, of the joint protection body (1). Thus, the joint protection body (1) is divided into a plurality of joint pieces (12). A junction of the upper notch (11) and a lower edge of the joint protection body (1) serves as a rotation fulcrum (13) between adjacent joint pieces (12). When the joint bends to a limiting position, the two adjacent joint pieces (12) on two sides of the upper notch (11) contact.

Abstract: The present invention concerns a high vacuum in-situ refining method for high-purity and superhigh-purity materials and the apparatus thereof, characterized in heating the upper part and lower part of crucible separately using double-heating-wires diffusion furnace under vacuum, thereby forming the temperature profile which is high at upper part and low at lower part of crucible, or in reverse during different stages; then heating the crucible in two steps to remove impurities with high saturation vapor pressure and low saturation vapor pressure respectively in efficiency; and obtaining high-purity materials eventually. The whole procedure is isolated from atmosphere, reducing contamination upon stuff remarkably. The present invention could provide products with high-quality and high production capacity, which are stable in performance, therefore is reliable and free from contamination.

Abstract: There is provided a method of manufacturing high quality ZnO manufacturing film on silicon (111) substrate, including the following steps: removing silicon oxide on the surface of silicon (111) substrate; depositing metal monocrystal film having 1-10 nm thickness, such as Mg, Ca, Sr, Cd etc, at low temperature; oxiding the metal film at low temperature to obstain metal oxide monocrystal layer; depositing ZnO buffer layer at low temperature; depositing ZnO epitaxial layer at high temperature. The ZnO film is suitable for fabrication of high performance of photoelectron device.

Abstract: The present invention concerns a high vacuum in-situ refining method for high-purity and superhigh-purity materials and the apparatus thereof, characterized in heating the upper part and lower part of crucible separately using double-heating-wires diffusion furnace under vacuum, thereby forming the temperature profile which is high at upper part and low at lower part of crucible, or in reverse during different stages; then heating the crucible in two steps to remove impurities with high saturation vapor pressure and low saturation vapor pressure respectively in efficiency; and obtaining high-purity materials eventually. The whole procedure is isolated from atmosphere, reducing contamination upon stuff remarkably. The present invention could provide products with high-quality and high production capacity, which are stable in performance, therefore is reliable and free from contamination.