Abstract: Provided is a preparation method for a layered cobalt-free positive electrode material, the method comprising the steps: (1) mixing a lithium salt, a nickel source, a manganese source, a dopant and a solvent, and subjecting same to wet ball milling to obtain a mixed slurry; (2) spray drying the mixed slurry to obtain a precursor; and (3) carrying out one instance of calcination on the precursor in an oxygen-containing atmosphere to obtain the layered cobalt-free positive electrode material. Further provided are a layered cobalt-free positive electrode material, which is obtained by the preparation method, and a lithium-ion battery containing the layered cobalt-free positive electrode material.

Abstract: Disclosed are a power demand side speech interaction method and system. The method includes: obtaining original demand information, the original demand information including user's basic information, user demand information, and a user demand time; converting the original demand information into first information in text format; performing text statistical analysis based on an industry term on the first information in text format, to obtain second information; searching for corresponding user's actual information from a database according to the second information; outputting the user's actual information; searching for a corresponding forecasting model from the database, according to the second information and the user's basic information; calculating, according to a policy limit value of latest policy information in the database, a time for which the model corresponding to the user's basic information reaches the policy limit value; and transmitting an early warning message.

Abstract: The present disclosure provides a cobalt-free and nickel-free positive electrode material and a preparation method therefor, and a battery. The preparation method includes: preparing a cobalt-free and nickel-free matrix material, and mixing the cobalt-free and nickel-free matrix material, a lithium source, and a divalent manganese compound for reaction to obtain the cobalt-free and nickel-free positive electrode material. By adding the divalent manganese compound, the generation of lamellar LiMnO2 and spinel LiMn2O4 is inhibited, the generation of lamellar Li2MnO3 is promoted, and the cycle performance of the material is improved.

Abstract: The present disclosure provides a gel electrolyte precursor and use thereof. The gel electrolyte precursor comprises a gel matrix monomer, a flexible additive, a polymerization initiator, and a lithium salt. The gel matrix monomer comprises an acrylonitrile-based monomer. The use of same in a semisolid battery achieves good electrical performance, and also reduces the amount of an electrolyte used. An acrylonitrile-based polymer obtained by the in-situ polymerization and gelation of an acrylonitrile-based monomer has good flame retardant performance and high voltage resistance, improving the safety performance of a battery.

Abstract: Provided are a cobalt-free positive electrode material, a preparation method thereof and a lithium ion battery. The preparation method includes: first sintering step is performed on a lithium source material and a cobalt-free precursor, to obtain a sintered product; the sintered product is crushed to 1 to 2 ?m, to obtain a cobalt-free single crystal material; and second sintering step is performed on the cobalt-free single crystal material, a boron coating agent and a carbon coating agent, to obtain the cobalt-free positive electrode material. The cobalt-free positive electrode material prepared by the above method has advantages of stable structure, high electric capacity, excellent current rate performance and good cycle performance and the like.

Abstract: Provided in the present disclosure are a gel electrolyte precursor and an application thereof. The gel electrolyte precursor comprises a gel skeleton monomer, a flexible additive, a crosslinking agent, a polymerization initiator, and a lithium salt. Applying same to a semi-solid battery can reduce the amount of electrolyte while ensuring the electrical performance of the battery, thereby achieving the purpose of improving battery safety performance.

Abstract: The present disclosure provides a gel electrolyte precursor and use thereof. The gel electrolyte precursor comprises a gel matrix monomer, a flexible additive, a polymerization initiator, and a lithium salt. The gel matrix monomer comprises an acrylonitrile-based monomer. The use of same in a semisolid battery achieves good electrical performance, and also reduces the amount of an electrolyte used. An acrylonitrile-based polymer obtained by the in-situ polymerization and gelation of an acrylonitrile-based monomer has good flame retardant performance and high voltage resistance, improving the safety performance of a battery.

Abstract: Provided are a lithium nickel manganese oxide composite material, a preparation method thereof and a lithium ion battery. The preparation method includes: a first calcining process is performed on a nano-oxide and a nickel-manganese precursor, to obtain an oxide-coated nickel-manganese precursor; and a second calcining process is performed on the precursor and a lithium source material, to obtain the lithium nickel manganese oxide, and a temperature of the first calcining process is lower than the second calcining process. At a lower temperature, the nano-oxide may be melted, a denser nano-oxide coating layer is formed on the surface of the precursor, so the oxide-coated nickel-manganese precursor is obtained. At a higher temperature, the nano-oxide, a nickel-manganese material and a lithium element may be more deeply combined. A problem that the nano-oxide layer is easy to fall off is solved, and cycle performance of the lithium nickel manganese oxide is greatly improved.

Abstract: A composite positive electrode material for a lithium ion battery, a preparation method therefor, and a use thereof. The composite positive electrode material comprises a positive electrode material core and a halide coating layer that is coated on the surface of the positive electrode material core, wherein halide comprises Li3YX6, and X is at least one among halogens. By means of the coating of the halide coating layer, the ionic conductivity and structural stability of the positive electrode material are greatly increased, which reduces the surface impedance of the material.

Abstract: Provided are a cobalt-free system, a positive electrode slurry, a slurry homogenization method therefor, and the use thereof. The cobalt-free system comprises a cobalt-free material, a binder, a conductive agent and a pH regulator. The cobalt-free system can reduce the rebound degree of the viscosity of a slurry after leaving to stand to the same degree as that of a ternary 811 single crystal, and can also improve the stability of the coating surface density of the cobalt-free material to the same level as that of a ternary material.

Abstract: The present invention is directed to a magnetic memory cell including a magnetic tunnel junction (MTJ) memory element and a two-terminal bidirectional selector coupled in series between two conductive lines. The MTJ memory element includes a magnetic free layer, a magnetic reference layer, and an insulating tunnel junction layer interposed therebetween. The two-terminal bidirectional selector includes bottom and top electrodes, first and third volatile switching layers interposed between the bottom and top electrodes, and a second volatile switching layer interposed between the first and third volatile switching layers. The bottom and top electrodes each independently include one of titanium nitride or iridium. The first and third volatile switching layers each include tantalum oxide and silver. The second volatile switching layer includes hafnium oxide and has a higher electrical resistance than the first and third volatile switching layers.

Abstract: The present invention is directed to a magnetic memory cell including a magnetic tunnel junction (MTJ) memory element and a two-terminal bidirectional selector coupled in series between two conductive lines. The MTJ memory element includes a magnetic free layer, a magnetic reference layer, and an insulating tunnel junction layer interposed therebetween. The two-terminal bidirectional selector includes bottom and top electrodes, first and third volatile switching layers interposed between the bottom and top electrodes, and a second volatile switching layer interposed between the first and third volatile switching layers. The bottom and top electrodes each independently include one of titanium nitride or iridium. The first and third volatile switching layers each include tantalum oxide and silver. The second volatile switching layer includes hafnium oxide and has a higher electrical resistance than the first and third volatile switching layers.

Abstract: The present invention is directed to a memory cell that includes a magnetic tunnel junction (MTJ) memory element and a two-terminal selector element coupled in series. The MTJ memory element includes a magnetic free layer structure and a magnetic reference layer structure with an insulating tunnel junction layer interposed therebetween. The magnetic reference layer structure includes one or more magnetic reference layers having a first invariable magnetization direction substantially perpendicular to layer planes thereof. The two-terminal selector element includes a first inert electrode and a second inert electrode with a volatile switching layer interposed therebetween; a first active electrode formed adjacent to the first inert electrode; and a second active electrode formed adjacent to the second inert electrode. The volatile switching layer includes at least one conductor layer interleaved with insulating layers.

Abstract: The present invention is directed to a memory cell array comprising an array of magnetic memory elements arranged in rows and columns; a plurality of electrodes, each of which is formed adjacent to a respective one of the array of magnetic memory elements; a plurality of first conductive lines, each of which is connected to a respective row of the array of magnetic memory elements along a row direction; and a plurality of composite lines. Each composite line includes a volatile switching layer connected to a respective column of the plurality of electrodes along a column direction; an electrode layer formed adjacent to the volatile switching layer; and a second conductive line formed adjacent to the electrode layer. The dimension of the volatile switching layer may be substantially larger than the size of the magnetic memory element along the row direction.

Abstract: The present invention is directed to a memory cell that includes a magnetic tunnel junction (MTJ) memory element and a two-terminal selector element coupled in series. The MTJ memory element includes a magnetic free layer structure and a magnetic reference layer structure with an insulating tunnel junction layer interposed therebetween. The magnetic reference layer structure includes one or more magnetic reference layers having a first invariable magnetization direction substantially perpendicular to layer planes thereof. The two-terminal selector element includes a first inert electrode and a second inert electrode with a volatile switching layer interposed therebetween; a first active electrode formed adjacent to the first inert electrode; and a second active electrode formed adjacent to the second inert electrode. The volatile switching layer includes at least one conductor layer interleaved with insulating layers.

Abstract: The present invention is directed to a memory cell that includes a magnetic tunnel junction (MTJ) memory element and a two-terminal selector element coupled in series. The MTJ memory element includes a magnetic free layer structure and a magnetic reference layer structure with an insulating tunnel junction layer interposed therebetween. The magnetic reference layer structure includes one or more magnetic reference layers having a first invariable magnetization direction substantially perpendicular to layer planes thereof. The two-terminal selector element includes a first inert electrode and a second inert electrode with a volatile switching layer interposed therebetween; a first active electrode formed adjacent to the first inert electrode; and a second active electrode formed adjacent to the second inert electrode. The volatile switching layer includes a plurality of metal-rich particles or clusters embedded in a matrix or at least one conductor layer interleaved with insulating layers.

Abstract: The present invention is directed to a memory cell that includes a magnetic tunnel junction (MTJ) memory element, which has a low resistance state and a high resistance state, and a two-terminal selector coupled to the MTJ memory element in series. The MTJ memory element includes a magnetic free layer and a magnetic reference layer with an insulating tunnel junction layer interposed therebetween. The two-terminal selector has an insulative state and a conductive state. The two-terminal selector in the conductive state has substantially lower resistance when switching the MTJ memory element from the low to high resistance state than from the high to low resistance state. The voltages applied to the memory cell to respectively switch the MTJ memory element from the low to high resistance state and from the high to low resistance state may be substantially same.

Abstract: The present invention is directed to a memory cell array comprising an array of magnetic memory elements arranged in rows and columns; a plurality of electrodes, each of which is formed adjacent to a respective one of the array of magnetic memory elements; a plurality of first conductive lines, each of which is connected to a respective row of the array of magnetic memory elements along a row direction; and a plurality of composite lines. Each composite line includes a volatile switching layer connected to a respective column of the plurality of electrodes along a column direction; an electrode layer formed adjacent to the volatile switching layer; and a second conductive line formed adjacent to the electrode layer. The dimension of the volatile switching layer may be substantially larger than the size of the magnetic memory element along the row direction.

Abstract: The present invention is directed to a memory device including a magnetic memory element; a horizontal conductive line disposed above the magnetic memory element; a bottom electrode formed beneath the magnetic memory element and having a top, first and second sides that are opposite to each other; a first vertical conductive line formed adjacent to the first side of the bottom electrode with a first volatile switching layer and a first electrode layer interposed therebetween; and a second vertical conductive line formed adjacent to the second side of the bottom electrode with a second volatile switching layer and a second electrode layer interposed therebetween. The magnetic memory element is electrically connected to the horizontal conductive line at one end and to the bottom electrode at the other end.

Abstract: The present invention is directed to a memory device including a magnetic memory element; a horizontal conductive line disposed above the magnetic memory element; a bottom electrode formed beneath the magnetic memory element and having a top, first and second sides that are opposite to each other; a first vertical conductive line formed adjacent to the first side of the bottom electrode with a first volatile switching layer and a first electrode layer interposed therebetween; and a second vertical conductive line formed adjacent to the second side of the bottom electrode with a second volatile switching layer and a second electrode layer interposed therebetween. The magnetic memory element is electrically connected to the horizontal conductive line at one end and to the bottom electrode at the other end.