Patents by Inventor Hongzhong Xu

Hongzhong Xu has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Low voltage NMOS-based electrostatic discharge clamp
    Patent number: 6844597
    Abstract: Systems and methods are described for a low-voltage electrostatic discharge clamp. A resistor pwell-tied transistor may be used as a low-voltage ESD clamp, where the body of the transistor is coupled to the source by a resistor, thereby reducing a DC leakage current and minimizing latch-ups in the transistor while maintaining effective ESD performance.
    Type: Grant
    Filed: February 10, 2003
    Date of Patent: January 18, 2005
    Assignee: Freescale Semiconductor, Inc.
    Inventors: Michael Baird, Richard T. Ida, James D. Whitfield, Hongzhong Xu, Sopan Joshi
  • Low voltage NMOS-based electrostatic discharge clamp
    Publication number: 20040155300
    Abstract: Systems and methods are described for a low-voltage electrostatic discharge clamp. A resistor pwell-tied transistor may be used as a low-voltage ESD clamp, where the body of the transistor is coupled to the source by a resistor, thereby reducing a DC leakage current and minimizing latch-ups in the transistor while maintaining effective ESD performance.
    Type: Application
    Filed: February 10, 2003
    Publication date: August 12, 2004
    Inventors: Michael Baird, Richard T. Ida, James D. Whitfield, Hongzhong Xu, Sopan Joshi
  • Semiconductor apparatus
    Publication number: 20030116778
    Abstract: A low voltage thyristor is disclosed that can be used to provide protection during electrostatic discharge event. The thyristor is connected between voltage reference nodes having a common potential, such as ground nodes, that are isolated from one another during normal operating conditions. During an ESD event on one of the voltage reference nodes, the low voltage thyrister triggers, at a voltage of less than ten volts, to help discharge the ESD current through the otherwise isolated ground node.
    Type: Application
    Filed: December 21, 2001
    Publication date: June 26, 2003
    Applicant: Motorola, Inc.
    Inventors: Richard T. Ida, Hongzhong Xu