Patents by Inventor Hoon-joo Na
Hoon-joo Na has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 9252058Abstract: A method of manufacturing a semiconductor device, a semiconductor device and systems incorporating the same include transistors having a gate metal doped with impurities. An altered work function of the transistor may alter a threshold voltage of the transistor. In certain embodiments, a gate metal of a first MOSFET is doped with impurities. A gate metal of a second MOSFET may be left undoped, doped with the same impurities with a different concentration, and/or doped with different impurities. In some embodiments, the MOSFETs are FinFETs, and the doping may be a conformal doping.Type: GrantFiled: June 19, 2014Date of Patent: February 2, 2016Assignee: SAMSUNG ELECTRONICS CO., LTD.Inventors: Hyung-Seok Hong, Sang-Jin Hyun, Hong-Bae Park, Hoon-Joo Na, Hye-Lan Lee
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Patent number: 9236313Abstract: A method of fabricating a semiconductor device having a dual gate allows for the gates to have a wide variety of threshold voltages. The method includes forming a gate insulation layer, a first capping layer, and a barrier layer in the foregoing sequence across a first region and a second region on a substrate, exposing the gate insulation layer on the first region by removing the first capping layer and the barrier layer from the first region, forming a second capping layer on the gate insulation layer in the first region and on the barrier layer in the second region, and thermally processing the substrate on which the second capping layer is formed. The thermal processing causes material of the second capping layer to spread into the gate insulation layer in the first region and material of the first capping layer to spread into the gate insulation layer in the second region. Thus, devices having different threshold voltages can be formed in the first and second regions.Type: GrantFiled: December 8, 2014Date of Patent: January 12, 2016Assignee: Samsung Electronics Co., Ltd.Inventors: Hoon-joo Na, Yu-gyun Shin, Hong-bae Park, Hag-ju Cho, Sug-hun Hong, Sang-jin Hyun, Hyung-seok Hong
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Publication number: 20150093888Abstract: A method of fabricating a semiconductor device having a dual gate allows for the gates to have a wide variety of threshold voltages. The method includes forming a gate insulation layer, a first capping layer, and a barrier layer in the foregoing sequence across a first region and a second region on a substrate, exposing the gate insulation layer on the first region by removing the first capping layer and the barrier layer from the first region, forming a second capping layer on the gate insulation layer in the first region and on the barrier layer in the second region, and thermally processing the substrate on which the second capping layer is formed. The thermal processing causes material of the second capping layer to spread into the gate insulation layer in the first region and material of the first capping layer to spread into the gate insulation layer in the second region. Thus, devices having different threshold voltages can be formed in the first and second regions.Type: ApplicationFiled: December 8, 2014Publication date: April 2, 2015Inventors: Hoon-joo Na, Yu-gyun Shin, Hong-bae Park, Hag-ju Cho, Sug-hun Hong, Sang-jin Hyun, Hyung-seok Hong
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Patent number: 8932922Abstract: A method of fabricating a semiconductor device having a dual gate allows for the gates to have a wide variety of threshold voltages. The method includes forming a gate insulation layer, a first capping layer, and a barrier layer in the foregoing sequence across a first region and a second region on a substrate, exposing the gate insulation layer on the first region by removing the first capping layer and the barrier layer from the first region, forming a second capping layer on the gate insulation layer in the first region and on the barrier layer in the second region, and thermally processing the substrate on which the second capping layer is formed. The thermal processing causes material of the second capping layer to spread into the gate insulation layer in the first region and material of the first capping layer to spread into the gate insulation layer in the second region. Thus, devices having different threshold voltages can be formed in the first and second regions.Type: GrantFiled: May 26, 2011Date of Patent: January 13, 2015Assignee: Samsung Electronics Co., Ltd.Inventors: Hoon-joo Na, Yu-gyun Shin, Hong-bae Park, Hag-ju Cho, Sug-hun Hong, Sang-jin Hyun, Hyung-seok Hong
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Publication number: 20140302652Abstract: A method of manufacturing a semiconductor device, a semiconductor device and systems incorporating the same include transistors having a gate metal doped with impurities. An altered work function of the transistor may alter a threshold voltage of the transistor. In certain embodiments, a gate metal of a first MOSFET is doped with impurities. A gate metal of a second MOSFET may be left undoped, doped with the same impurities with a different concentration, and/or doped with different impurities.Type: ApplicationFiled: June 19, 2014Publication date: October 9, 2014Inventors: Hyung-Seok Hong, Sang-Jin Hyun, Hong-Bae Park, Hoon-Joo Na, Hye-Lan Lee
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Publication number: 20140246726Abstract: A method for manufacturing a semiconductor may include providing a substrate having first and second regions defined therein, forming an interlayer dielectric layer including first and second trenches formed in the first and second regions, respectively, and conformally forming a gate dielectric layer along a top surface of the interlayer dielectric layer, side and bottom surfaces of the first trench and side, and bottom surfaces of the second trench. An etch stop dielectric layer may be formed on the gate dielectric layer, a first metal layer may be formed to fill the first and second trenches, and the first metal layer in the first region may be removed using the etch stop dielectric layer as an etch stopper.Type: ApplicationFiled: May 12, 2014Publication date: September 4, 2014Applicant: Samsung Electronics Co., Ltd.Inventors: Hoon-Joo NA, Hyung-Seok HONG, Sang-Bom KANG, Hyeok-Jun SON, June-Hee LEE, Jeong-Hee HAN, Sang-Jin HYUN
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Patent number: 8786028Abstract: A method of manufacturing a semiconductor device, a semiconductor device and systems incorporating the same include transistors having a gate metal doped with impurities. An altered work function of the transistor may alter a threshold voltage of the transistor. In certain embodiments, a gate metal of a first MOSFET is doped with impurities. A gate metal of a second MOSFET may be left undoped, doped with the same impurities with a different concentration, and/or doped with different impurities. In some embodiments, the MOSFETs are FinFETs, and the doping may be a conformal doping.Type: GrantFiled: April 12, 2012Date of Patent: July 22, 2014Assignee: Samsung Electronics Co., Ltd.Inventors: Hyung-Seok Hong, Sang-Jin Hyun, Hong-Bae Park, Hoon-Joo Na, Hye-Lan Lee
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Patent number: 8748251Abstract: A method for manufacturing a semiconductor may include providing a substrate having first and second regions defined therein, forming an interlayer dielectric layer including first and second trenches formed in the first and second regions, respectively, and conformally forming a gate dielectric layer along a top surface of the interlayer dielectric layer, side and bottom surfaces of the first trench and side, and bottom surfaces of the second trench. An etch stop dielectric layer may be formed on the gate dielectric layer, a first metal layer may be formed to fill the first and second trenches, and the first metal layer in the first region may be removed using the etch stop dielectric layer as an etch stopper.Type: GrantFiled: June 20, 2012Date of Patent: June 10, 2014Assignee: Samsung Electronics Co., Ltd.Inventors: Hoon-Joo Na, Hyung-Seok Hong, Sang-Bom Kang, Hyeok-Jun Son, June-Hee Lee, Jeong-Hee Han, Sang-Jin Hyun
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Patent number: 8580629Abstract: A method of fabricating a semiconductor device may include: preparing a substrate in which first and second regions are defined; forming an interlayer insulating film, which includes first and second trenches, on the substrate; forming a work function control film, which contains Al and N, along a top surface of the interlayer insulating film, side and bottom surfaces of the first trench, and side and bottom surfaces of the second trench; forming a mask pattern on the work function control film formed in the second region; injecting a work function control material into the work function control film formed in the first region to control a work function of the work function control film formed in the first region; removing the mask pattern; and forming a first metal gate electrode to fill the first trench and forming a second metal gate electrode to fill the second trench.Type: GrantFiled: September 23, 2011Date of Patent: November 12, 2013Assignee: SAMSUNG Electronics Co., Ltd.Inventors: Hong-Bae Park, Sang-Jin Hyun, Hu-Yong Lee, Hoon-Joo Na, Jeong-Hee Han, Hye-Lan Lee, Hyung-Seok Hong
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Patent number: 8557651Abstract: In an etchant for etching a capping layer having etching selectivity with respect to a dielectric layer, the capping layer changes compositions of the dielectric layer, to thereby control a threshold voltage of a gate electrode including the dielectric layer. The etchant includes about 0.01 to 3 percent by weight of an acid, about 10 to 40 percent by weight of a fluoride salt and a solvent. Accordingly, the dielectric layer is prevented from being damaged by the etching process for removing the capping layer and the electric characteristics of the gate electrode are improved.Type: GrantFiled: March 4, 2011Date of Patent: October 15, 2013Assignee: Samsung Electronics Co., Ltd.Inventors: Hyo-San Lee, Bo-Un Yoon, Kun-Tack Lee, Hag-Ju Cho, Sang-Jin Hyun, Hoon-Joo Na, Hyung-Seok Hong
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Publication number: 20120329262Abstract: A method for manufacturing a semiconductor may include providing a substrate having first and second regions defined therein, forming an interlayer dielectric layer including first and second trenches formed in the first and second regions, respectively, and conformally forming a gate dielectric layer along a top surface of the interlayer dielectric layer, side and bottom surfaces of the first trench and side, and bottom surfaces of the second trench. An etch stop dielectric layer may be formed on the gate dielectric layer, a first metal layer may be formed to fill the first and second trenches, and the first metal layer in the first region may be removed using the etch stop dielectric layer as an etch stopper.Type: ApplicationFiled: June 20, 2012Publication date: December 27, 2012Inventors: Hoon-Joo NA, Hyung-Seok Hong, Sang-Bom Kang, Hyeok-Jun Son, June-Hee Lee, Jeong-Hee Han, Sang-Jin Hyun
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Publication number: 20120292715Abstract: A method of manufacturing a semiconductor device, a semiconductor device and systems incorporating the same include transistors having a gate metal doped with impurities. An altered work function of the transistor may alter a threshold voltage of the transistor. In certain embodiments, a gate metal of a first MOSFET is doped with impurities. A gate metal of a second MOSFET may be left undoped, doped with the same impurities with a different concentration, and/or doped with different impurities.Type: ApplicationFiled: April 12, 2012Publication date: November 22, 2012Inventors: Hyung-Seok HONG, Sang-Jin HYUN, Hong-Bae PARK, Hoon-Joo NA, Hye-Lan LEE
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Patent number: 8293599Abstract: A semiconductor device that has a dual gate having different work functions is simply formed by using a selective nitridation. A gate insulating layer is formed on a semiconductor substrate including a first region and a second region, on which devices having different threshold voltages are to be formed. A diffusion inhibiting material is selectively injected into the gate insulating layer in one of the first region and the second region. A diffusion layer is formed on the gate insulating layer. A work function controlling material is directly diffused from the diffusion layer to the gate insulating layer using a heat treatment, wherein the gate insulting layer is self-aligned capped with the selectively injected diffusion inhibiting material so that the work function controlling material is diffused into the other of the first region and the second region. The gate insulating layer is entirely exposed by removing the diffusion layer. A gate electrode layer is formed on the exposed gate insulating layer.Type: GrantFiled: August 12, 2009Date of Patent: October 23, 2012Assignee: Samsung Electronics Co., Ltd.Inventors: Hoon-joo Na, Yu-gyun Shin, Hong-bae Park, Hag-ju Cho, Sug-hun Hong, Sang-jin Hyun, Hyung-seok Hong
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Publication number: 20120196433Abstract: Provided is a manufacturing method for a semiconductor device having reduced leakage current and increased capacitance while improving interface characteristics. The manufacturing method includes forming a silicon oxide layer on a base layer including silicon, forming a silicon oxynitride layer by implanting nitrogen into the silicon oxide layer, and forming hydroxy groups on a surface of the silicon oxynitride layer while etching the silicon oxynitride layer.Type: ApplicationFiled: August 12, 2011Publication date: August 2, 2012Inventors: Jeong-Hee Han, Hyeok-Jun Son, Sang-Jin Hyun, Hoon-Joo Na
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Publication number: 20120122309Abstract: A method of fabricating a semiconductor device may include: preparing a substrate in which first and second regions are defined; forming an interlayer insulating film, which includes first and second trenches, on the substrate; forming a work function control film, which contains Al and N, along a top surface of the interlayer insulating film, side and bottom surfaces of the first trench, and side and bottom surfaces of the second trench; forming a mask pattern on the work function control film formed in the second region; injecting a work function control material into the work function control film formed in the first region to control a work function of the work function control film formed in the first region; removing the mask pattern; and forming a first metal gate electrode to fill the first trench and forming a second metal gate electrode to fill the second trench.Type: ApplicationFiled: September 23, 2011Publication date: May 17, 2012Applicant: Samsung Electronics Co., Ltd.Inventors: Hong-Bae PARK, Sang-Jin Hyun, Hu-Yong Lee, Hoon-Joo Na, Jeong-Hee Han, Hye-Lan Lee, Hyung-Seok Hong
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Publication number: 20110223758Abstract: A method of fabricating a semiconductor device having a dual gate allows for the gates to have a wide variety of threshold voltages. The method includes forming a gate insulation layer, a first capping layer, and a barrier layer in the foregoing sequence across a first region and a second region on a substrate, exposing the gate insulation layer on the first region by removing the first capping layer and the barrier layer from the first region, forming a second capping layer on the gate insulation layer in the first region and on the barrier layer in the second region, and thermally processing the substrate on which the second capping layer is formed. The thermal processing causes material of the second capping layer to spread into the gate insulation layer in the first region and material of the first capping layer to spread into the gate insulation layer in the second region. Thus, devices having different threshold voltages can be formed in the first and second regions.Type: ApplicationFiled: May 26, 2011Publication date: September 15, 2011Applicant: SAMSUNG ELECTRONICS CO., LTD.Inventors: Hoon-joo Na, Yu-gyun Shin, Hong-bae Park, Hag-ju Cho, Sug-hun Hong, Sang-jin Hyun, Hyung-seok Hong
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Publication number: 20110217833Abstract: In an etchant for etching a capping layer having etching selectivity with respect to a dielectric layer, the capping layer changes compositions of the dielectric layer, to thereby control a threshold voltage of a gate electrode including the dielectric layer. The etchant includes about 0.01 to 3 percent by weight of an acid, about 10 to 40 percent by weight of a fluoride salt and a solvent. Accordingly, the dielectric layer is prevented from being damaged by the etching process for removing the capping layer and the electric characteristics of the gate electrode are improved.Type: ApplicationFiled: March 4, 2011Publication date: September 8, 2011Inventors: Hyo-San Lee, Bo-Un Yoon, Kun-Tack Lee, Hag-Ju Cho, Sang-Jin Hyun, Hoon-Joo Na, Hyung-Seok Hong
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Publication number: 20110180879Abstract: Provided are a CMOS transistor, a semiconductor device having the transistor, and a semiconductor module having the device. The CMOS transistor may include first and second interconnection structures respectively disposed in first and second regions of a semiconductor substrate. The first and second regions of the semiconductor substrate may have different conductivity types. The first and second interconnection structures may be disposed on the semiconductor substrate. The first interconnection structure may have a different stacked structure from the second interconnection structure. The CMOS transistor may be disposed in the semiconductor device. The semiconductor device may be disposed in the semiconductor module.Type: ApplicationFiled: December 20, 2010Publication date: July 28, 2011Applicant: SAMSUNG ELECTRONICS CO., LTD.Inventors: Hye-Lan Lee, Hong-Bae Park, Sang-Jin Hyun, Yu-Gyun Shin, Sug-Hun Hong, Hoon-Joo Na, Hyung-Seok Hong
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Patent number: 7972950Abstract: A method of fabricating a semiconductor device having a dual gate allows for the gates to have a wide variety of threshold voltages. The method includes forming a gate insulation layer, a first capping layer, and a barrier layer in the foregoing sequence across a first region and a second region on a substrate, exposing the gate insulation layer on the first region by removing the first capping layer and the barrier layer from the first region, forming a second capping layer on the gate insulation layer in the first region and on the barrier layer in the second region, and thermally processing the substrate on which the second capping layer is formed. The thermal processing causes material of the second capping layer to spread into the gate insulation layer in the first region and material of the first capping layer to spread into the gate insulation layer in the second region. Thus, devices having different threshold voltages can be formed in the first and second regions.Type: GrantFiled: October 16, 2009Date of Patent: July 5, 2011Assignee: Samsung Electronics Co., Ltd.Inventors: Hoon-joo Na, Yu-gyun Shin, Hong-bae Park, Hag-ju Cho, Sug-hun Hong, Sang-jin Hyun, Hyung-seok Hong
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Publication number: 20100203716Abstract: A method of fabricating a semiconductor device having a dual gate allows for the gates to have a wide variety of threshold voltages. The method includes forming a gate insulation layer, a first capping layer, and a barrier layer in the foregoing sequence across a first region and a second region on a substrate, exposing the gate insulation layer on the first region by removing the first capping layer and the barrier layer from the first region, forming a second capping layer on the gate insulation layer in the first region and on the barrier layer in the second region, and thermally processing the substrate on which the second capping layer is formed. The thermal processing causes material of the second capping layer to spread into the gate insulation layer in the first region and material of the first capping layer to spread into the gate insulation layer in the second region. Thus, devices having different threshold voltages can be formed in the first and second regions.Type: ApplicationFiled: October 16, 2009Publication date: August 12, 2010Applicant: SAMSUNG ELECTRONICS CO., LTD.Inventors: Hoon-joo Na, Yu-gyun Shin, Hong-bae Park, Hag-ju Cho, Sug-hun Hong, Sang-jin Hyun, Hyung-seok Hong