Patents by Inventor Horst Borndoerfer

Horst Borndoerfer has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Photoresists which are suitable for producing sub-micron size structures
    Patent number: 6110637
    Abstract: A photoresist suitable for the production of structures in the submicron range contains the following components:a polymer component with carboxylic acid anhydride functions and carboxylic acid tert. butyl ester groupsa photoinitiator which releases an acid when exposed anda suitable solvent.
    Type: Grant
    Filed: February 9, 1995
    Date of Patent: August 29, 2000
    Assignee: Siemens Aktinegesellschaft
    Inventors: Recai Sezi, Rainer Leuschner, Horst Borndoerfer, Michael Sebald, Siegfried Birkle, Hellmut Ahne
  • Mixed polymers
    Patent number: 5703186
    Abstract: Premixed polymers which can serve as base polymers for high-resolution resists are structured from 40 to 99 mole % of a tert. butyl ester of an unsaturated carboxylic acid and 1 to 60 mole % of an anhydride of an unsaturated carboxylic acid.
    Type: Grant
    Filed: September 23, 1996
    Date of Patent: December 30, 1997
    Assignee: Siemens Aktiengesellschaft
    Inventors: Recai Sezi, Horst Borndoerfer, Hellmut Ahne, Siegfried Birkle, Eberhard Kuehn, Rainer Leuschner, Eva Rissel, Michael Sebald
  • Copolymers
    Patent number: 5616667
    Abstract: New mixed polymers which can serve as base polymers for high-resolution resists are structured from 40 to 99 mole % of a tert. butyl ester of an unsaturated carboxylic acid and 1 to 60 mole % of an anhydride of an unsaturated carboxylic acid.
    Type: Grant
    Filed: May 4, 1995
    Date of Patent: April 1, 1997
    Assignee: Siemens Aktiengesellschaft
    Inventors: Recai Sezi, Horst Borndoerfer, Hellmut Ahne, Siegfried Birkle, Eberhard Kuehn, Rainer Leuschner, Eva Rissel, Michael Sebald
  • Production of photolithographic structures
    Patent number: 5384220
    Abstract: A method for the photolithographic production of structures in the submicron range including the following steps:- a photoresist layer comprising a polymer containing carboxylic acid anhydride and carboxylic acid tert. butyl ester groups, a photoinitiator which releases an acid when exposed, and a suitable solvent is applied to a substrate;- the photoresist layer is dried;- the photoresist layer is exposed in an imagewise manner;- the exposed photoresist layer is subjected to temperature treatment;- the photoresist layer treated in this way is subjected to liquid silylation;- the silylated photoresist layer is dry-developed in an anisotropic oxygen plasma;where the temperature treatment is handled in such a way that the photoresist becomes hydrophilic in the exposed areas.
    Type: Grant
    Filed: December 20, 1991
    Date of Patent: January 24, 1995
    Assignee: Siemens Aktiengesellschaft
    Inventors: Recai Sezi, Horst Borndoerfer, Rainer Leuschner, Michael Sebald, Siegfried Birkle, Hellmut Ahne