Abstract: A dry-developable, positively acting TSI resist contains the following components:a suitable solvent,a strong acid former as the photoactive component, anda base polymer in the form of a copolymer or terpolymer with maleic acid anhydride as a basic unit and glycidyl methacrylate and/or a styrene derivative as a further basic unit, and possibly an additive.

Abstract: High resolution resist structures with steep edges are obtained using standard equipment, with high sensitivity, particularly in the deep UV range. A photoresist layer consisting of a polymer having anhydride groups and blocked imide- or phenolic hydroxyl groups and of a photoactive component which forms a strong acid during irradiation is first deposited on a substrate, followed by irradiation with a patterned image. The irradiated photoresist layer is then treated with a water-based or a water-alcohol-based solution of a polyfunctional amino- or hydroxy-siloxane, and is etched in an oxygen-containing plasma.

Abstract: High resolution resist structures with steep edges are obtained using standard equipment, even in cases involving critical contact-hole planes. First, a photoresist layer containing a polymer with chemically reactive groups and a photoactive component based on diazoketone or quinone diazide is deposited on a substrate. The photoresist layer is then irradiated with a patterned image and treated with a polyfunctional organic compound having functional groups that can chemically react with the reactive groups of the polymer. This step is followed by a maskless flood exposure. The photoresist layer irradiated in this manner is then treated with a metal-containing organic compound having at least one functional group capable of chemical reaction with the reactive groups of the polymer, followed by etching in an oxygen-containing plasma.