Abstract: A bonding tool for bonding a semiconductor element to a substrate on a bonding machine is provided. The bonding tool includes a body portion including a contact region for contacting the semiconductor element during a bonding process on the bonding machine. The body portion defines a non-contact region adjacent the contact region. The bonding tool also includes a heat resistant coating applied to the non-contact region.

Abstract: A bonding tool for bonding a semiconductor element to a substrate on a bonding machine is provided. The bonding tool includes a body portion including a contact region for contacting the semiconductor element during a bonding process on the bonding machine. The body portion defines a non-contact region adjacent the contact region. The bonding tool also includes a heat resistant coating applied to the non-contact region.

Abstract: A method of ultrasonically bonding semiconductor elements includes the steps of: (a) aligning surfaces of a plurality of first conductive structures of a first semiconductor element to respective surfaces of a plurality of second conductive structures of a second semiconductor element; (b) ultrasonically forming tack bonds between ones of the first conductive structures and respective ones of the second conductive structures; and (c) forming completed bonds between the first conductive structures and the second conductive structures.

Abstract: A method of operating a bonding machine is provided. The method includes the steps of: (a) carrying a semiconductor element with a transfer tool; and (b) transferring the semiconductor element from the transfer tool to a bonding tool of the bonding machine without the transfer tool and the bonding tool contacting the semiconductor element at the same time.

Abstract: A method of ultrasonically bonding semiconductor elements includes the steps of: (a) aligning surfaces of a plurality of first conductive structures of a first semiconductor element to respective surfaces of a plurality of second conductive structures of a second semiconductor element; (b) ultrasonically forming tack bonds between ones of the first conductive structures and respective ones of the second conductive structures; and (c) forming completed bonds between the first conductive structures and the second conductive structures.

Abstract: A method of operating a thermocompression bonding system is provided. The method includes the steps of: bringing first conductive structures of a semiconductor element into contact with second conductive structures of a substrate in connection with a thermocompression bonding operation; and moving the semiconductor element relative to the substrate along at least one substantially horizontal direction using a motion system of at least one of the semiconductor element and the substrate.

Abstract: A method of ultrasonically bonding semiconductor elements includes the steps of: (a) aligning surfaces of a plurality of first conductive structures of a first semiconductor element to respective surfaces of a plurality of second conductive structures of a second semiconductor element; and (b) ultrasonically bonding ones of the first conductive structures to respective ones of the second conductive structures. A bonding surface of at least one of the first conductive structures and the second conductive structures includes a frangible coating.

Abstract: A method of ultrasonically bonding semiconductor elements includes the steps of: (a) aligning surfaces of a plurality of first conductive structures of a first semiconductor element to respective surfaces of a plurality of second conductive structures of a second semiconductor element; (b) ultrasonically forming tack bonds between ones of the first conductive structures and respective ones of the second conductive structures; and (c) forming completed bonds between the first conductive structures and the second conductive structures.

Abstract: A method of operating a thermocompression bonding system is provided. The method includes the steps of: (a) applying a first level of bond force to a semiconductor element while first conductive structures of the semiconductor element are in contact with second conductive structures of a substrate in connection with a thermocompression bonding operation; (b) measuring a lateral force related to contact between (i) ones of the first conductive structures and (ii) corresponding ones of the second conductive structures; (c) determining a corrective motion to be applied based on the lateral force measured in step (b); and (d) applying the corrective motion determined in step (c).

Abstract: A method of ultrasonically bonding semiconductor elements includes the steps of: (a) aligning surfaces of a plurality of first conductive structures of a first semiconductor element to respective surfaces of a plurality of second conductive structures of a second semiconductor element; and (b) ultrasonically bonding ones of the first conductive structures to respective ones of the second conductive structures. A bonding surface of at least one of the first conductive structures and the second conductive structures includes a frangible coating.

Abstract: A method of ultrasonically bonding semiconductor elements includes the steps of: (a) aligning surfaces of a plurality of first conductive structures of a first semiconductor element to respective surfaces of a plurality of second conductive structures of a second semiconductor element; (b) ultrasonically forming tack bonds between ones of the first conductive structures and respective ones of the second conductive structures; and (c) forming completed bonds between the first conductive structures and the second conductive structures.

Abstract: A method of operating a bonding machine is provided. The method includes the steps of: (a) carrying a semiconductor element with a transfer tool; and (b) transferring the semiconductor element from the transfer tool to a bonding tool of the bonding machine without the transfer tool and the bonding tool contacting the semiconductor element at the same time.

Abstract: A method of operating a thermocompression bonding system is provided. The method includes the steps of: (a) applying a first level of bond force to a semiconductor element while first conductive structures of the semiconductor element are in contact with second conductive structures of a substrate in connection with a thermocompression bonding operation; (b) measuring a lateral force related to contact between (i) ones of the first conductive structures and (ii) corresponding ones of the second conductive structures; (c) determining a corrective motion to be applied based on the lateral force measured in step (b); and (d) applying the corrective motion determined in step (c).

Abstract: A method of operating a thermocompression bonding system is provided. The method includes the steps of: bringing first conductive structures of a semiconductor element into contact with second conductive structures of a substrate in connection with a thermocompression bonding operation; and moving the semiconductor element relative to the substrate along at least one substantially horizontal direction using a motion system of at least one of the semiconductor element and the substrate.

Abstract: A thermocompression bonder is provided. The thermocompression bonder includes: a bond head including a heated bonding tool for bonding a semiconductor element to a substrate; and a flux application tool for applying a flux material to conductive contacts of the substrate prior to bonding of the semiconductor element to the substrate.

Abstract: A thermocompression bonder is provided. The thermocompression bonder includes: a bond head including a heated bonding tool for bonding a semiconductor element to a substrate; and a flux application tool for applying a flux material to conductive contacts of the substrate prior to bonding of the semiconductor element to the substrate.

Abstract: An electrode for a wire bonding apparatus is provided. The electrode includes a body portion and a tip portion adjacent the body portion. The tip portion has a substantially spherical configuration.

Abstract: A method for fabricating beams for a probe card includes dividing a large beam panel into smaller sub-panels before attaching the beams to corresponding posts on a substrate. Each sub-panel may have a sufficient number of beams to test several devices under test. The beam sub-panels may be aligned to the space transformer using alignment fiducials on the beam sub-panels that correspond to opposing alignment features formed in the space transformer or other substrate. Special tie-bars may be formed between: (1) rows, for example, of beams and the frame/frame splines (i.e., quadrant tie-bars); and (2) adjacent beams within any such rows on the beam panel (i.e., beam tie-bars). The approach may also include the use of tip tie-bars and/or tail tie-bars.

Abstract: An approach for fabricating cantilever probes for a probe card assembly includes forming posts on conductive traces on a substrate. A beam panel having beam elements formed therein is aligned to the substrate so that the beam elements are in contact with the plurality of posts. Each beam element is in contact with a post at a portion of the beam element so that both a first end portion and a second end portion overhang the post element. Each beam element is also attached to the beam panel by the first end portion. The beam elements are bonded to the plurality of posts. The first end portion of each beam element is cut, for example using an electrode, laser ablation or by dicing, to release the beam element from the beam panel. The beam panel is then removed, leaving the beam elements attached to the posts.

Abstract: A method and apparatus for performing automated alignment of probes of a probe card is provided. The desired horizontal location for a probe is compared with the actual horizontal position for the probe to determine a horizontal correction distance and a horizontal correction direction to correct a horizontal alignment for the probe. A first tool automatically corrects the horizontal alignment for the probe based on the horizontal correction distance and the horizontal correction direction. Upon determining that an actual vertical position of the probe is closer to the probe card than a desired vertical position, a second tool automatically changes the actual vertical position of the probe to the desired vertical position. Upon determining that the actual vertical position of the probe is farther from the probe card than the desired vertical position, a third tool automatically changes the actual vertical position of the probe to the desired vertical position.